Chuck for plasma processing chamber
An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.
1. An electrostatic chuck system for a plasma processing chamber, comprising:
a base plate comprising Al-SiC, wherein the base plate is formed by an additive manufacturing process;
a ceramic plate disposed over the base plate; and
a bonding layer bonding the ceramic plate to the base plate.
2. The electrostatic chuck system of claim 1 , further comprising channels within the base plate.
3. The electrostatic chuck system of claim 2 , wherein the channels are temperature control channels.
4. The electrostatic chuck system of claim 1 , wherein a difference between a CTE of the base plate and a CTE of the edge ring is between 12.5-14.5 ppm/° C.
5. The electrostatic chuck system of claim 1 , wherein the edge ring comprises at least one of quartz, ceramic, plasma corrosion resistant glass, or silicon.
6. The electrostatic chuck system of claim 1 , wherein the ceramic plate comprises at least one of aluminum oxide or aluminum nitride.
7. The electrostatic chuck system of claim 1 , wherein the bonding layer comprises silicone.
8. The electrostatic chuck system of claim 7 , wherein the bonding layer further comprises thermally conductive filler material.
9. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 65% SiC by weight.
10. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 40% SiC by weight.
11. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 30% SiC by weight.
12. The electrostatic chuck system of claim 1 , further comprising a temperature controller connected to the base plate, wherein the temperature controller is configured to heat the base plate to a temperature above 90° C. and cool the base plate to a temperature below −40° C.
13. The electrostatic chuck system of claim 1 , wherein the base plate comprises:
a top plate, wherein channels are machined into a bottom of the top plate; and
a bottom plate connected to the top plate.