Methods for depositing blocking layers on metal surfaces
Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.
1. A method of selectively depositing a blocking layer, the method comprising:
exposing a substrate having a metal surface and a dielectric surface to an epoxide to selectively form a blocking layer on the metal surface, wherein the epoxide is substituted;
selectively depositing a silicon nitride layer on the dielectric surface;
repeating exposure of the substrate to a silane to deposit the silicon nitride layer until the silicon nitride layer has reached a predetermined thickness; and
removing the blocking layer from the substrate by sequential exposure of the substrate to an oxygen plasma and a hydrogen plasma.
2. The method of claim 1 , wherein the metal surface comprises cobalt.
3. The method of claim 1 , wherein the epoxide contains more than one epoxide moiety.
4. The method of claim 1 , wherein the epoxide comprises one or more of the following compounds:
where R is independently selected from C1-C4 alkyl groups.
5. The method of claim 1 , further comprising cleaning the metal surface with a hydrogen plasma before exposing the substrate to the epoxide.
6. The method of claim 5 , wherein the hydrogen plasma comprises one or more of a conductively coupled plasma (CCP), an inductively coupled plasma (ICP), or plasma of H 2 .
7. A method of selectively depositing a blocking layer, the method comprising exposing a substrate having a metal surface and a dielectric surface to an epoxide to selectively form a blocking layer on the metal surface, wherein the epoxide contains more than one epoxide moiety.
8. The method of claim 7 , wherein the metal surface comprises cobalt.
9. The method of claim 7 , wherein the epoxide comprises one or more of the following compounds:
10. The method of claim 7 , further comprising cleaning the metal surface with a hydrogen plasma before exposing the substrate to the epoxide.
11. The method of claim 7 , further comprising selectively depositing a silicon nitride layer on the dielectric surface.
12. The method of claim 11 , further comprising repeating exposure of the substrate to a silane to deposit a silicon nitride layer until the silicon nitride layer has reached a predetermined thickness, and removing the blocking layer from the substrate by sequential exposure of the substrate to an oxygen plasma and a hydrogen plasma.
13. A method of selectively depositing a blocking layer, the method comprising exposing a substrate having a metal surface comprising cobalt and a dielectric surface to an epoxide to selectively form a blocking layer on the metal surface, wherein the epoxide comprises one or more of the following compounds:
where R is independently selected from C1-C4 alkyl groups.
14. The method of claim 13 , further comprising cleaning the metal surface with a hydrogen plasma before exposing the substrate to the epoxide.
15. The method of claim 14 , wherein the hydrogen plasma comprises one or more of a conductively coupled plasma (CCP), an inductively coupled plasma (ICP), or plasma of H 2 .
16. The method of claim 15 , further comprising:
selectively depositing a silicon nitride layer on the dielectric surface;
repeating exposure of the substrate to a silane to deposit a silicon nitride layer until the silicon nitride layer has reached a predetermined thickness; and
removing the blocking layer from the substrate by sequential exposure of the substrate to an oxygen plasma and a hydrogen plasma.