Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance. The apparatus further includes a disposer configured to discard the first gas discharged from the substrate processor. The apparatus further includes a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor.
1. A semiconductor manufacturing apparatus comprising:
a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance;
a disposer configured to discard the first gas discharged from the substrate processor; and
a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor,
wherein the recoverer includes:
a generator configured to generate the second substance by using the first substance in the first gas; and
a container configured to contain a liquid including the second substance generated by the generator, and
wherein the apparatus further comprises:
a measuring instrument configured to measure a liquid level of a liquid in the container;
a switch configured to switch a discharge destination of the first gas discharged from the substrate processor between the disposer and the recoverer; and
a controller configured to control the switch based on the liquid level measured by the measuring instrument.
2. A semiconductor manufacturing apparatus comprising:
a substrate processor configured to process a substrate with a gas of a first substance and a gas of a second substance, and discharge a first gas including the first substance and/or the second substance;
a disposer configured to discard the first gas discharged from the substrate processor; and
a recoverer configured to generate a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supply the second gas to the substrate processor,
wherein the recoverer includes:
a container configured to contain the first gas, and
wherein the apparatus further comprises:
a measuring instrument configured to measure a pressure of a gas in the container;
a switch configured to switch a discharge destination of the first gas discharged from the substrate processor between the disposer and the recoverer; and
a controller configured to control the switch based on the pressure measured by the measuring instrument.
3. A method of manufacturing a semiconductor device, comprising:
processing a substrate in a substrate processor by using a gas of a first substance and a gas of a second substance, and discharging a first gas including the first substance and/or the second substance from the substrate processor;
discarding, with a disposer, the first gas discharged from the substrate processor; and
generating, with a recoverer, a second gas including the second substance by using the first substance in the first gas discharged from the substrate processor, and supplying the second gas to the substrate processor,
wherein the first substance is D 2 or H 2 where H represents hydrogen and D represents deuterium, and the second substance is D 2 O or H 2 O where O represents oxygen.
4. The method of claim 3 , wherein the recoverer causes D 2 or H 2 as the first substance to react with O 2 to generate D 2 O or H 2 O as the second substance.