Base silicide on monocrystalline base structures

1. A method for forming a transistor, the method comprising:

forming a collector of a transistor;

forming a base of the transistor, the base including a monocrystalline base layer;

forming an emitter of the transistor;

forming a sacrificial material in contact with the monocrystalline base layer;

removing at least a portion of the sacrificial material;

after forming the emitter, forming a base silicide, the forming the base silicide includes:

forming at least a portion of the base silicide on a portion of the monocrystalline base layer exposed by the removing.

2. The method of claim 1 further comprising:

forming a first layer directly over the sacrificial material and directly over the monocrystalline base layer prior to the removing;

wherein the forming the emitter includes forming an emitter opening in the first layer, wherein the method includes removing a portion of the sacrificial material through the emitter opening prior to the removing at least a portion of the sacrificial material.

3. The method of claim 2 wherein:

wherein the removing the portion of the sacrificial material through the emitter opening forms a sidewall of a remaining portion of the portion of sacrificial material;

the method includes sealing the sidewall prior to the removing at least the portion of the sacrificial material.

4. The method of claim 3 wherein the sealing includes sealing with a semiconductor material.

5. The method of claim 1 further comprising:

forming a base contact structure, wherein the base contact structure is in electrical contact with the base silicide.

6. The method of claim 5 wherein the base silicide includes a silicided path from the base silicide in electrical contact with the base contact structure to the base silicide on the portion of the monocrystalline base layer exposed by the removing.

7. The method of claim 1 wherein the forming the base silicide includes:

forming a portion of the base silicide on a portion of polycrystalline base material, wherein the base contact structure is located directly over the portion of the base silicide formed on a portion of polycrystalline base.

8. The method of claim 7 wherein the polycrystalline base material is located in a layer that is located directly above the monocrystalline base layer.

9. The method of claim 7 wherein the polycrystalline base material is located in a base polycrystalline layer wherein the removing step includes removing material on a sidewall of the base polycrystalline layer, wherein the forming the base silicide includes forming a portion of the base silicide on the sidewall.

10. The method of claim 1 further comprising:

prior to the removing, forming a polycrystalline base layer located directly over the portion of the monocrystalline base layer that will be exposed by the removing;

forming a trench in the polycrystalline base layer and filling the trench with a first material, wherein the trench is located laterally apart from an area directly over a portion of the portion of the monocrystalline base layer that will be exposed by the removing.

11. The method of claim 10 wherein the removing includes removing at least a portion of the first material to access the sacrificial material to remove the sacrificial material.

12. The method of claim 1 wherein the monocrystalline base layer includes a least a portion of an intrinsic base of the transistor.

13. The method of claim 1 wherein forming the emitter includes forming a patterned emitter electrode structure, the patterned emitter electrode structure is located directly over at least a portion of the portion of the monocrystalline base layer exposed by the removing.

14. The method of claim 13 , wherein the patterned emitter electrode structure is patterned prior to the removing.

15. The method of claim 1 wherein the monocrystalline base layer is characterized as a silicon germanium layer.

16. The method of claim 1 wherein the transistor is characterized as a heterojunction bipolar transistor.

17. A method for forming a transistor, the method comprising:

forming a collector of a transistor;

forming a base of the transistor, the base including a monocrystalline base layer;

forming an emitter of the transistor;

forming a sacrificial material in contact with the monocrystalline base layer;

removing at least a portion of the sacrificial material;

forming a base silicide, the forming the base silicide includes:

forming at least a portion of the base silicide on a portion of the monocrystalline base layer exposed by the removing;

forming an emitter silicide on the emitter simultaneously with forming the base silicide.

18. A method of forming a transistor comprising:

forming a sacrificial material over a monocrystalline base layer;

forming an emitter electrode material over sacrificial material;

patterning the emitter electrode material to form a patterned emitter structure;

after the patterning the emitter electrode material, removing the sacrificial material from at least a portion of the monocrystalline base layer;

forming a base silicide, the forming the base silicide includes:

forming at least a portion of the base silicide on a portion of the monocrystalline base layer exposed by the removing;

wherein the patterned emitter structure is located directly over at least a portion of the portion of the monocrystalline base layer exposed by the removing.

19. The method of claim 18 further comprising:

forming a base contact structure in electrical contact with the base silicide;

wherein the base silicide includes a silicided path from the base silicide in electrical contact with the base contact structure to the base silicide on the portion of the monocrystalline base layer exposed by the removing.

20. The method of claim 19 wherein the base contact structure is formed directly over a portion of the base silicide formed on a polycrystalline base layer.