Electroluminescent device having window
In non-limiting example embodiments, an electroluminescent device may include a lower structure including an emission area, and an encapsulation structure located on the lower structure. The lower structure may include a window. The window may be a light transmitting region or a notch. The light transmitting region may be spaced apart from the emission area and completely or partially surrounded by the emission area in a plan view. The notch may be formed at one side of the lower structure and recessed inward in a plan view such that one side of the emission area substantially conforms to the notch.
1. An electroluminescent device, comprising:
a lower structure including a non-transparent emission area; and
an encapsulation structure located directly on the lower structure, wherein
the lower structure includes an outer non-emission area surrounding the non-transparent emission area in plan view and an inner non-emission area surrounded by the non-transparent emission area in plan view,
the inner non-emission area includes a through hole which is spaced apart from the non-transparent emission area and surrounded by the non-transparent emission area in plan view,
the outer non-emission area includes an opened outer inorganic top surface portion and an outer inorganic top surface portion, the outer inorganic top surface portion being connected to the opened outer inorganic top surface portion, the outer inorganic top surface portion including at least a part located between the opened outer inorganic top surface portion and the non-transparent emission area, the outer inorganic top surface portion surrounding the non-transparent emission area in plan view,
the inner non-emission area includes an inner inorganic top surface portion and an inner organic dam, the inner inorganic top surface portion surrounding the through hole in plan view such that the inner inorganic top surface portion is located between the non-transparent emission area and the through hole, the inner organic dam surrounding the through hole in plan view and having an inner organic top surface connected to the inner inorganic top surface portion in plan view,
the outer non-emission area includes an outer organic dam surrounding the non-transparent emission area in plan view and having an outer organic top surface connected to the outer inorganic top surface portion in plan view,
the lower structure comprises an inorganic structure having a buffer layer directly on which a transistor is located,
the encapsulation structure includes an inorganic lower surface making a direct contact with both of the outer inorganic top surface portion and the inner inorganic top surface portion while not making a contact with the opened outer inorganic top surface portion,
the lower structure includes a first wire extending in a direction from the non-transparent emission area toward a first side of the through hole and a second wire extending in a direction away from a second side of the through hole, the second side of the through hole facing the first side of the through hole toward the non-transparent emission area,
the through hole is located between the first and second wires,
the first and second wires are located on a same layer,
the first and second wires have a same signal state,
a portion of the lower structure, the portion being located between the buffer layer and the inner inorganic top surface portion to contact the buffer layer and the encapsulation structure, includes only at least one inorganic materials, and
the lower structure includes an opened inner inorganic surface portion that does not contact the inorganic lower surface of the encapsulation structure, the opened inner inorganic surface portion being connected to the inner inorganic top surface portion.
2. The electroluminescent device of claim 1 , wherein the lower structure includes a connection member bypassing the through hole in plan view to be electrically connected between the first and second wires, at least a part of the connection member being located in the inner non-emission area.
3. The electroluminescent device of claim 1 , wherein the inorganic lower surface directly contacts both of the outer inorganic top surface portion and the outer organic top surface of the outer organic dam.
4. The electroluminescent device of claim 1 , wherein the inorganic lower surface directly contacts both of the inner inorganic top surface portion and the inner organic top surface of the inner organic dam.
5. The electroluminescent device of claim 1 , wherein a virtual center line extending along lengths of the first and second wires passes through the through hole.
6. An after-manufactured electroluminescent device, comprising:
a lower structure including a non-transparent emission area; and
an encapsulation structure located on the lower structure, wherein
the lower structure includes a light transmitting region surrounded by the non-transparent emission area in plan view, the light transmitting region having a light transmittance greater than the non-transparent emission area,
the lower structure includes an electroluminescent unit having a first electrode, an intermediate layer located on the first electrode, and a second electrode located on the intermediate layer,
the lower structure includes a first wire extending in a direction from the non-transparent emission area toward a first side of the light transmitting region and a second wire extending in a direction away from a second side of the light transmitting region, the second side of the light transmitting region facing the first side of the light transmitting region toward the non-transparent emission area,
the light transmitting region is located between the first and second wires,
the first and second wires are located on a same layer,
the first and second wires overlap the non-transparent emission area,
the first and second wires supply a driving current to the first electrode or the second electrode,
the first and second wires have a same driving current state,
the lower structure has an outer non-emission area surrounding the non-transparent emission area in plan view,
the encapsulation structure has an inorganic lower surface,
the outer non-emission area has an outer inorganic surface portion surrounding the non-transparent emission area in plan view and making a direct contact with the inorganic lower surface to form an inorganic-inorganic contact region surrounding the non-transparent emission area in plan view,
the lower structure comprises an inorganic structure having a buffer layer on which a transistor is located,
a portion of the buffer layer corresponding the light transmitting region is present and permanently remains so that the buffer layer overlaps the light transmitting region,
a portion of the encapsulation structure corresponding the light transmitting region is present and permanently remains so that the encapsulation structure overlaps the light transmitting region,
the encapsulation structure comprises a first inorganic layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer,
the inorganic lower surface of the encapsulation structure has a first portion corresponding the non-transparent emission area of the lower structure and a second portion corresponding the light transmitting region of the lower structure, the first portion of the inorganic lower surface being higher than the second portion of the inorganic lower surface,
the after-manufactured electroluminescent device further comprises a touch panel located on the encapsulation structure in a way such that the lower structure, the encapsulation structure, and the touch panel are sequentially stacked,
the organic layer has an organic lower surface,
the organic lower surface has a first portion corresponding the non-transparent emission area of the lower structure and a second portion corresponding the light transmitting region of the lower structure, the first portion of the organic lower surface being higher than the second portion of the organic lower surface,
a distance measured between the buffer layer and the encapsulation structure in the non-transparent emission area is greater than a distance measured between the portion of the buffer layer and the portion of the encapsulation structure in the light transmitting region, and
the second portion of the inorganic lower surface is lower than an upper surface of the first electrode, but the second portion of the inorganic lower surface is higher than an upper surface of the buffer layer.
7. The after-manufactured electroluminescent device of claim 6 , wherein a virtual center line extending along lengths of the first and second wires passes through the light transmitting region.
8. The after-manufactured electroluminescent device of claim 6 , wherein the lower structure further includes a planarization layer directly on which the first electrode is located and a pixel defining layer located directly on the first electrode to cover an edge of the first electrode before the intermediate layer is formed on the first electrode,
a portion of the planarization layer, the portion corresponding to the light transmitting region, is removed, and
a portion of the pixel defining layer, the portion corresponding to the light transmitting region, is removed.
9. The after-manufactured electroluminescent device of claim 8 , wherein the lower structure further includes an insulation layer located between the buffer layer and the planarization layer, and
the insulation layer expands to completely cover the light transmitting region in plan view.
10. The after-manufactured electroluminescent device of claim 9 , wherein the lower structure further includes a conductive member located directly on the insulation layer.
11. The after-manufactured electroluminescent device of claim 10 , comprising a transistor including an active layer having a source region and a drain region,
wherein the conductive member is electrically connected to the source region or the drain region.