Memory polling method, memory storage device and memory control circuit unit

1. A memory polling method, adapted for a memory storage device, the memory storage device comprising a rewritable non-volatile memory module, the rewritable non-volatile memory module comprising a plurality of physical units, and the memory polling method comprising:

detecting a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode;

counting the plurality of busy times corresponding to the plurality of physical units;

setting the delay time to a longer busy time among the mode and median of the busy times according to the memory storage device being characterized as a product with low power consumption; and

transmitting a status request to the rewritable non-volatile memory module after the delay time.

2. The memory polling method according to claim 1 , wherein the first command comprises at least one of a write command, an erase command, and a read command.

3. The memory polling method according to claim 1 , wherein the plurality of physical units comprise a plurality of physical programming units, and the step of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

calculating an average count of the plurality of busy times corresponding to the plurality of physical programming units that logically belong to a same physical erasing unit, and setting the average count to be a busy time corresponding to the physical erasing unit; and

counting the plurality of busy times corresponding to the plurality of physical erasing units to generate the count statistic value.

4. The memory polling method according to claim 1 , wherein the plurality of physical units comprise a plurality of physical programming units, and the step of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

counting the plurality of busy times corresponding to the plurality of physical programming units to generate the count statistic value.

5. The memory polling method according to claim 1 , wherein the memory polling method further comprises:

determining a frequency of updating the delay time according to a preset count of command executions or a preset time period, wherein the preset count of command executions is the count of completed command executions.

6. A memory storage device, comprising:

a connection interface unit, configured for coupling to a host system;

a rewritable non-volatile memory module, comprising a plurality of physical units; and

a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,

wherein the memory control circuit unit is configured to detect a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode,

the memory control circuit unit is further configured to count the plurality of busy times corresponding to the plurality of physical units,

the memory control circuit unit is further configured to set the delay time to a longer busy time among the mode and median of the busy times according to the memory storage device being characterized as a product with low power consumption, and

the memory control circuit unit is further configured to transmit a status request to the rewritable non-volatile memory module after the delay time.

7. The memory storage device according to claim 6 , wherein the first command comprises at least one of a write command, an erase command, and a read command.

8. The memory storage device according to claim 6 , wherein the plurality of physical units comprise a plurality of physical programming units, and the operation of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

calculating an average count of the plurality of busy times corresponding to the plurality of physical programming units that logically belong to a same physical erasing unit, and setting the average count to be a busy time corresponding to the physical erasing unit; and

counting the plurality of busy times corresponding to the plurality of physical erasing units to generate the count statistic value.

9. The memory storage device according to claim 6 , wherein the plurality of physical units comprise a plurality of physical programming units, and the operation of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

counting the plurality of busy times corresponding to the plurality of physical programming units to generate the count statistic value.

10. The memory storage device according to claim 6 , wherein the memory control circuit unit is further configured to determine a frequency of updating the delay time according to a preset count of command executions or a preset time period, wherein the preset count of command executions is the count of completed command executions.

11. A memory control circuit unit, configured to control a memory storage device comprising a rewritable non-volatile memory module, the rewritable non-volatile memory module comprising a plurality of physical units, and the memory control circuit unit comprising:

a host interface, configured for coupling to a host system;

a memory interface, configured for coupling to the rewritable non-volatile memory module; and

a memory management circuit, coupled to the host interface and the memory interface,

wherein the memory management circuit is configured for detecting a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode,

the memory management circuit is further configured to count the plurality of busy times corresponding to the plurality of physical units,

the memory management circuit is further configured to set the delay time to a longer busy time among the mode and median of the busy times according to the memory storage device being characterized as a product with low power consumption, and

the memory management circuit is further configured to transmit a status request to the rewritable non-volatile memory module after the delay time.

12. The memory control circuit unit according to claim 11 , wherein the first command comprises at least one of a write command, an erase command, and a read command.

13. The memory control circuit unit according to claim 11 , wherein the plurality of physical units comprise a plurality of physical programming units, and the operation of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

calculating an average count of the plurality of busy times corresponding to the plurality of physical programming units that logically belong to a same physical erasing unit, and setting the average count to be a busy time corresponding to the physical erasing unit; and

counting the plurality of busy times corresponding to the plurality of physical erasing units to generate the count statistic value.

14. The memory control circuit unit according to claim 11 , wherein the plurality of physical units comprise a plurality of physical programming units, and the operation of counting the plurality of busy times corresponding to the plurality of physical units to generate the count statistic value comprises:

counting the plurality of busy times corresponding to the plurality of physical programming units to generate the count statistic value.

15. The memory control circuit unit according to claim 11 , wherein the memory management circuit is further configured to determine a frequency of updating the delay time according to a preset count of command executions or a preset time period, wherein the preset count of command executions is the count of completed command executions.

16. A memory polling method, adapted for a memory storage device, the memory storage device comprising a rewritable non-volatile memory module, the rewritable non-volatile memory module comprising a plurality of physical units, and the memory polling method comprising:

detecting a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode;

counting the plurality of busy times corresponding to the plurality of physical units;

setting the delay time to a shorter busy time among the mode and median of the busy times according to the memory storage device being characterized as an efficiency-prioritized product; and

transmitting a status request to the rewritable non-volatile memory module after the delay time.

17. A memory storage device, comprising:

a connection interface unit, configured for coupling to a host system;

a rewritable non-volatile memory module, comprising a plurality of physical units; and

a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,

wherein the memory control circuit unit is configured to detect a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode,

the memory control circuit unit is further configured to count the plurality of busy times corresponding to the plurality of physical units,

the memory control circuit unit is further configured to set the delay time to a shorter busy time among the mode and median of the busy times according to the memory storage device being characterized as an efficiency-prioritized product, and

the memory control circuit unit is further configured to transmit a status request to the rewritable non-volatile memory module after the delay time.

18. A memory control circuit unit, configured to control a memory storage device comprising a rewritable non-volatile memory module, the rewritable non-volatile memory module comprising a plurality of physical units, and the memory control circuit unit comprising:

a host interface, configured for coupling to a host system;

a memory interface, configured for coupling to the rewritable non-volatile memory module; and

a memory management circuit, coupled to the host interface and the memory interface,

wherein the memory management circuit is configured for detecting a plurality of busy times corresponding to the plurality of physical units associated with types of command of a plurality of first commands and access mode of the plurality of physical units when executing the plurality of first commands, wherein the access mode includes TLC mode and SLC mode,

the memory management circuit is further configured to count the plurality of busy times corresponding to the plurality of physical units,

the memory management circuit is further configured to set when the delay time to a shorter busy time among the mode and median of the busy times according to the memory storage device being characterized as an efficiency-prioritized product, and

the memory management circuit is further configured to transmit a status request to the rewritable non-volatile memory module after the delay time.