High hole mobility transistor (HHMT) and method of manufacturing the same

1. A high hole mobility transistor (HHMT), comprising:

a vertical interface which is substantially perpendicular to a substrate surface;

a channel layer disposed outside of the vertical interface;

a channel supply layer at least partially covering a first side of the channel layer, wherein in the channel layer a vertical two-dimensional hole gas 2DHG is formed on the first side adjacent to the channel layer and the channel supply layer;

a first electrode configured to being electronically connected to the vertical two-dimensional hole gas 2DHG;

a second electrode configured to being electronically connected to the vertical two-dimensional hole gas 2DHG; and

a gate electrode disposed outside of the channel supply layer.

2. The high hole mobility transistor according to claim 1 , wherein the first side is a (000-1) plane of Group III nitride semiconductor.

3. The high hole mobility transistor according to claim 2 , wherein the Group III nitride semiconductor is GaN.

4. The high hole mobility transistor according to claim 1 , wherein the vertical interface is a Si (111) plane, sapphire Al 2 O 3 (0001) plane, SiC (0001) plane or a (000-1), or (0001) plane of GaN intrinsic substrate.

5. The high hole mobility transistor according to claim 4 , wherein the first electrode and the second electrode are positioned on one side of the two-dimensional hole gas 2DHG and the gate electrode is positioned on another side of the two-dimensional hole gas 2DHG.

6. The high hole mobility transistor according to claim 1 , wherein the first electrode or the second electrode form an ohmic contact with the channel supply layer.

7. The high hole mobility transistor according to claim 1 , wherein the first electrode, the second electrode, and the gate electrode are positioned on a same side of the two-dimensional hole gas 2DHG.

8. The high hole mobility transistor according to claim 1 , wherein the first electrode, the second electrode, and the gate electrode are in a same level or in a same upright position.

9. The high hole mobility transistor according to claim 1 , wherein the first electrode extends under the channel layer.

10. The high hole mobility transistor according to claim 1 , wherein the first electrode is a drain.

11. The high hole mobility transistor according to claim 1 , wherein the second electrode extends above the channel layer.

12. The high hole mobility transistor according to claim 1 , wherein the second electrode is a source.

13. The high hole mobility transistor according to claim 1 , further comprising a nucleation layer on the vertical interface of the substrate.

14. The high hole mobility transistor according to claim 13 , further comprising a buffer layer positioned between the nucleation layer and the channel layer.

15. The high hole mobility transistor according to claim 1 , further comprising a screening layer formed on the side of the channel layer away from the two-dimensional hole gas 2DHG.

16. The high hole mobility transistor according to claim 1 , further comprising an insulating layer extending under the channel layer and the channel supply layer.

17. The high hole mobility transistor according to claim 1 , further comprising a gate insulating layer between the channel supply layer and the gate electrode.

18. The high hole mobility transistor according to claim 1 , further comprising a gate insulating layer between the channel supply layer and the gate electrode.

19. A high hole mobility transistor (HHMT), comprising:

a column including a channel layer and a channel supply layer which vertically extend on at least one side of the column, wherein a vertical two-dimensional hole gas 2DHG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer;

a first electrode contacted with the column and being electrically connected with the 2DHG;

a second electrode contacted with the column and being electrically connected with the 2DHG; and

a third electrode deposed on the column;

wherein the vertical 2DHG is perpendicular to a substrate surface.

20. The high hole mobility transistor according to claim 19 , wherein the first electrode or the second electrode is a drain or a source; and the third electrode is a gate.

21. The high hole mobility transistor according to claim 19 , wherein the first electrode, the second electrode, and the third electrode are positioned on a same side of the column.

22. The high hole mobility transistor according to claim 19 , wherein the first electrode is positioned on a top of the column.

23. The high hole mobility transistor according to claim 19 , wherein the second electrode is positioned under a bottom of the column.

24. The high hole mobility transistor according to claim 23 , wherein an area of the second electrode is bigger than that of the bottom of the column.

25. A method of manufacturing a high hole mobility transistor, comprising:

forming a vertical interface which is perpendicular to a substrate surface;

forming a channel layer outside of the vertical interface; and

forming a channel supply layer at least partially covering a first side of the channel layer, wherein the first side is a (000-1) panel of Group III nitride semiconductor, a vertical two-dimensional hole gas 2DHG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer; and

forming a first electrode and a second electrode being electrically connected with the two-dimensional hole gas 2DHG and a gate electrode outside of the channel supply layer.

26. The method according to claim 25 , wherein the Group III nitride semiconductor is GaN.

27. The method according to claim 25 , wherein the vertical interface is formed on a substrate.

28. The method according to claim 25 , wherein a gate insulating layer is included between the channel supply layer and the gate electrode.

29. The method according to claim 25 , further comprising transversely etching the channel supply layer or the channel supply layer and a part of the channel layer before forming a first electrode and a second ohmic contacted electrode.

30. The method according to claim 25 , further comprising forming a nucleation layer on the vertical interface, wherein Chlorine gas is aerated while forming a nucleation layer.

31. The method according to claim 25 , further comprising forming the second electrode and the gate electrode electrically connected to the two-dimensional hole gas 2DHG; wiping off the substrate or a part of the substrate; and forming the first electrode under the channel layer and the channel supply layer.