Semiconductor device

1. A semiconductor device comprising:

a first conductive layer;

a first insulating layer;

a semiconductor layer;

a pair of second conductive layers; and

a second insulating layer,

wherein the first insulating layer is in contact with a top surface of the first conductive layer,

wherein the semiconductor layer is in contact with a top surface of the first insulating layer,

wherein the pair of second conductive layers are in contact with a top surface of the semiconductor layer,

wherein the pair of second conductive layers are apart from each other with a space therebetween,

wherein the space overlaps with the first conductive layer,

wherein the second conductive layer has a stacked-layer structure of a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film,

wherein the second insulating layer is in contact with a top surface of the semiconductor layer, a top surface of the first conductive film, a side surface of the first conductive film, a top surface of the third conductive film, and a side surface of the third conductive film,

wherein the semiconductor layer comprises indium and oxygen,

wherein the semiconductor layer has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc, and

wherein the element M is one or more of gallium, aluminum, yttrium, and tin.

2. A semiconductor device comprising:

a first conductive layer;

a first insulating layer;

a semiconductor layer;

a pair of second conductive layers; and

a second insulating layer,

wherein the first insulating layer is in contact with a top surface of the first conductive layer,

wherein the semiconductor layer is in contact with a top surface of the first insulating layer,

wherein the pair of second conductive layers are in contact with a top surface of the semiconductor layer,

wherein the pair of second conductive layers are apart from each other with a space therebetween,

wherein the space overlaps with the first conductive layer,

wherein the second conductive layer has a stacked-layer structure of a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film,

wherein the second insulating layer is in contact with a top surface of the semiconductor layer, a top surface of the first conductive film, a side surface of the first conductive film, a top surface of the third conductive film, and a side surface of the third conductive film,

wherein the semiconductor layer comprises indium, zinc, and oxygen,

wherein the semiconductor layer has a composition falling within a range obtained by connecting first coordinates (44:11:10), second coordinates (4:1:4), third coordinates (1:0:1), fourth coordinates (11:0:2), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc, and

wherein the element M is one or more of gallium, aluminum, yttrium, and tin.

3. The semiconductor device according to claim 1 ,

wherein the semiconductor layer has a stacked-layer structure of a first metal oxide film and a second metal oxide film over the first metal oxide film, and

wherein the first metal oxide film has lower crystallinity than the second metal oxide film.

4. The semiconductor device according to claim 1 ,

wherein the second conductive film comprises copper, silver, gold, or aluminum,

wherein each of the first conductive film and the third conductive film comprises an element different from an element in the second conductive film, and

wherein the first conductive film and the third conductive film each independently comprise any of titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, and ruthenium.

5. The semiconductor device according to claim 1 , further comprising:

wherein the second insulating layer comprises oxygen.

6. The semiconductor device according to claim 1 , further comprising:

a third insulating layer,

wherein the third insulating layer is in contact with a top surface of the second insulating layer, and

wherein the third insulating layer comprises nitrogen.

7. The semiconductor device according to claim 2 ,

wherein the semiconductor layer has a stacked-layer structure of a first metal oxide film and a second metal oxide film over the first metal oxide film, and

wherein the first metal oxide film has lower crystallinity than the second metal oxide film.

8. The semiconductor device according to claim 2 ,

wherein the second conductive film comprises copper, silver, gold, or aluminum,

wherein each of the first conductive film and the third conductive film comprises an element different from an element in the second conductive film, and

wherein the first conductive film and the third conductive film each independently comprise any of titanium, tungsten, molybdenum, chromium, tantalum, zinc, indium, platinum, and ruthenium.

9. The semiconductor device according to claim 2 , further comprising:

wherein the second insulating layer comprises oxygen.

10. The semiconductor device according to claim 2 , further comprising:

a third insulating layer,

wherein the third insulating layer is in contact with a top surface of the second insulating layer, and

wherein the third insulating layer comprises nitrogen.

11. The semiconductor device according to claim 10 ,

wherein the second insulating layer comprises silicon oxide, and

wherein the third insulating layer comprises silicon nitride.