Methods of modifying portions of layer stacks
Embodiments provided herein generally relate to methods of modifying portions of layer stacks. The methods include forming deep trenches and narrow trenches, such that a desirably low voltage drop between layers is achieved. A method of forming a deep trench includes etching portions of a flowable dielectric, such that a deep metal contact is disposed below the deep trench. The deep trench is selectively etched to form a modified deep trench. A method of forming a super via includes forming a super via trench through a second layer stack of a layer superstack. The methods disclosed herein allow for decreasing the resistance, and thus the voltage drop, of features in a semiconductor layer stack.
1. A layer stack, comprising:
a first dielectric layer of dielectric material;
a plurality of metal contacts comprising a deep metal contact, the plurality of metal contacts at least partially in the first dielectric layer;
a first etch stop layer disposed over and in contact with the first dielectric layer;
a second dielectric layer over the first etch stop layer;
one or more narrow trenches in the first etch stop layer and the second dielectric layer, a depth of the one or more narrow trenches defined by the first etch stop layer; and
a modified deep trench in the first etch stop layer, the second dielectric layer, and the first dielectric layer, the modified deep trench over the deep metal contact, the modified deep trench having a deeper depth than a depth of at least one of the narrow trenches, the modified deep trench extending partially into the dielectric material of the first dielectric layer.
2. The layer stack of claim 1 , further comprising a barrier layer over the modified deep trench.
3. The layer stack of claim 1 , further comprising a first filler material comprising a first conductive material, the first filler material at least partially filling the modified deep trench.
4. The layer stack of claim 3 , further comprising a second filler material, wherein:
the second filler material comprises a second conductive material different than the first conductive material,
the second filler material is over the first filler material, and
the second filler material at least partially fills the modified deep trench.
5. The layer stack of claim 3 , wherein the first filler material at least partially fills at least one narrow trench.
6. The layer stack of claim 5 , wherein a second filler material at least partially fills at least one narrow trench.
7. The layer stack of claim 6 , wherein:
the first filler material comprises cobalt (Co), and
the second filler material comprises copper (Cu).
8. The layer stack of claim 1 , wherein one of the one or more narrow trenches is over a metal contact.
9. The layer stack of claim 1 , wherein the modified deep trench exposes at least a portion of the deep metal contact.
10. The layer stack of claim 9 , wherein the modified deep trench exposes a top surface and portions of side surfaces of the deep metal contact.
11. A layer stack, comprising:
a first dielectric layer of dielectric material disposed over a substrate;
a plurality of metal contacts comprising a deep metal contact, the plurality of metal contacts at least partially in the first dielectric layer;
a first etch stop layer disposed over and in contact with the first dielectric layer;
a second dielectric layer over the first etch stop layer;
one or more narrow trenches in the first etch stop layer and the second dielectric layer, a depth of the one or more narrow trenches defined by the first etch stop layer; and
a modified deep trench in the first etch stop layer, the second dielectric layer, and the first dielectric layer, the modified deep trench over the deep metal contact, the modified deep trench having a deeper depth than a depth of at least one of the narrow trenches, the modified deep trench extending partially into the dielectric material of the first dielectric layer.
12. The layer stack of claim 11 , further comprising:
a first filler material of a first conductive material, the first filler material at least partially filling the modified deep trench; and
a second filler material disposed over the first filler material, the second filler material being a second conductive material different than the first conductive material.
13. The layer stack of claim 12 , wherein the first filler material comprises cobalt (Co), and the second filler material comprises copper (Cu).
14. The layer stack of claim 11 , wherein the first dielectric layer separates the plurality of metal contacts from the substrate.
15. A layer stack, comprising:
a first dielectric layer of dielectric material disposed over a substrate;
a plurality of metal contacts comprising a deep metal contact, the plurality of metal contacts at least partially in the first dielectric layer;
a first etch stop layer disposed over and in contact with the first dielectric layer;
a second dielectric layer over the first etch stop layer, the first etch stop layer disposed between the second dielectric layer and the plurality of metal contacts;
one or more narrow trenches in the first etch stop layer and the second dielectric layer, a depth of the one or more narrow trenches defined by the first etch stop layer; and
a modified deep trench in the first etch stop layer, the second dielectric layer, and the first dielectric layer, the modified deep trench over the deep metal contact, the modified deep trench having a deeper depth than a depth of at least one of the narrow trenches, the modified deep trench extending partially into the dielectric material of the first dielectric layer.
16. The layer stack of claim 15 , further comprising:
a first filler material comprising a first conductive material, the first filler material extending into the modified deep trench past the first etch stop layer.
17. The layer stack of claim 16 , further comprising:
a second filler material comprising a second conductive material, the second conductive material being different than the first conductive material, the second conductive material comprising at least one of cobalt (Co), tungsten (W), or copper (Cu).
18. The layer stack of claim 15 , wherein a first narrow trench of the one or more narrow trenches is disposed over a first metal contact of the plurality of metal contacts.
19. The layer stack of claim 15 , further comprising:
a second etch stop layer disposed over the second dielectric layer, the one or more narrow trenches and the modified deep trench extending from the second etch stop layer toward the first dielectric layer.
20. The layer stack of claim 15 , wherein the modified deep trench extends partially around the deep metal contact.