Light emitting diode for display and display apparatus having the same
A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes Al x Ga (1-x-y) In y P (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.
1. A light emitting device comprising:
a first LED sub-unit having a thickness in a first direction;
a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer;
a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit; and
a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit,
wherein:
the active layer of the first LED sub-unit is configured to generate light, comprises AlxGa (1-x-y) InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction;
the active layer of the second LED sub-unit comprises the same material as the active layer of the first LED sub-unit;
the second LED sub-unit is configured to emit light having the same color as that emitted from the first LED sub-unit; and
a peak wavelength of the first LED sub-unit is different from a peak wavelength of the second LED sub-unit.
2. The light emitting device of claim 1 , further comprising:
a third LED sub-unit disposed on the second LED sub-unit; and
a fourth LED sub-unit disposed on the third LED sub-unit.
3. The light emitting device of claim 2 , wherein each of the third and fourth LED sub-units is configured to emit light in a wavelength band different from that emitted from the first LED sub-unit.
4. The light emitting device of claim 2 , wherein the first ohmic electrode is disposed between the first and second LED sub-units.
5. The light emitting device of claim 4 , wherein:
the first ohmic electrode is formed in plural; and
a portion of at least one first ohmic electrode does not overlap the third LED sub-unit in the first direction.
6. The light emitting device of claim 1 , further comprising a first bonding layer disposed between the first and second LED sub-units,
wherein the first ohmic electrode is surrounded by the first bonding layer.
7. The light emitting device of claim 1 , further comprising a second ohmic electrode forming ohmic contact with the first-type semiconductor layer of the second LED sub-unit.
8. The light emitting device of claim 1 , further comprising a first color filter disposed between the second and third LED sub-units, the first color filter being configured to transmit light generated from the first and second LED sub-units and reflect light generated from the third LED sub-unit.
9. The light emitting device of claim 1 , wherein the first and second LED sub-units are electrically connected in series.
10. The light emitting device of claim 1 , wherein the reflective electrode has a width greater than that of the first ohmic electrode.
11. A light emitting device comprising:
a first LED sub-unit having a thickness in a first direction;
a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer;
a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit; and
a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit,
wherein:
the first LED sub-unit is configured to emit red light;
the second LED sub-unit is configured to emit light having the same color as that emitted from the first LED sub-unit; and
a peak wavelength of the first LED sub-unit is different from a peak wavelength of the second LED sub-unit.
12. The light emitting device of claim 11 , further comprising a third LED sub-unit and a fourth LED sub-unit disposed on the second LED sub-unit,
wherein each of the third and fourth LED sub-units is configured to emit light having a different wavelength band from those emitted from the first and second LED sub-units.
13. The light emitting device of claim 11 , wherein the first ohmic electrode is disposed between the first and second LED sub-units.
14. The light emitting device of claim 13 , further comprising a first bonding layer disposed between the first and second LED sub-units,
wherein the first ohmic electrode is formed in plural, and each of the first ohmic electrode is surrounded by the first bonding layer.
15. The light emitting device of claim 11 , wherein the reflective electrode has a width greater than that of the first ohmic electrode.
16. A light emitting device comprising:
a first LED sub-unit having a thickness in a first direction;
a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer;
a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit; and
a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit,
wherein the first LED sub-unit is configured to emit light from the active layer thereof, and the second LED sub-unit is configured to emit light having the same color as that emitted from the first LED sub-unit, and
a peak wavelength of the first LED sub-unit is different from a peak wavelength of the second LED sub-unit.
17. The light emitting device of claim 16 , further comprising a third LED sub-unit and a fourth LED sub-unit disposed on the second LED sub-unit,
wherein each of the third and fourth LED sub-units is configured to emit light in a different wavelength band different from those emitted from the first and second LED sub-units.
18. The light emitting device of claim 16 , wherein the first ohmic electrode is disposed between the first and second LED sub-units.
19. The light emitting device of claim 16 , further comprising a first bonding layer disposed between the first and second LED sub-units,
wherein the first ohmic electrode is formed in plural, and each of the first ohmic electrode is surrounded by the first bonding layer.
20. The light emitting device of claim 16 , wherein the reflective electrode has a width greater than that of the first ohmic electrode.