Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a stacked body including a conductive pattern and an insulating pattern, a cell plug passing through the stacked body, a semiconductor layer, a peripheral transistor arranged on the semiconductor layer, a first conductor coupling the peripheral transistor to the cell plug, a second conductor coupled to the conductive pattern, a pass plug coupled to the second conductor, and a pass gate surrounding the pass plug, wherein the pass gate is arranged at substantially a same level as the semiconductor layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a stacked body including a conductive pattern and an insulating pattern;
forming a cell plug passing through the stacked body;
forming a substrate including a first region and a second region on the first region;
forming a pass plug surrounded by the substrate;
electrically connecting the pass plug to the conductive pattern;
removing the first region of the substrate to expose a portion of the pass plug; and
forming a contact coupled to the portion of the pass plug.
2. The method of claim 1 , wherein electrically connecting the pass plug to the conductive pattern comprises bonding a first bonding pad coupled to the pass plug and a second bonding pad coupled to the conductive pattern.
3. The method of claim 1 , further comprising forming a peripheral transistor on the substrate.
4. The method of claim 3 , further comprising electrically connecting the peripheral transistor to the cell plug.
5. The method of claim 4 , wherein the peripheral transistor is electrically connected to the cell plug, when the pass plug is electrically connected to the conductive pattern.
6. The method of claim 1 , further comprising forming a separating structure passing through the second region of the substrate.
7. The method of claim 6 , wherein forming the separating structure comprises:
forming a trench passing through the second region of the substrate;
conformally forming a first material layer and a second material layer in the trench; and
removing an upper portion of the first material layer and an upper portion of the second material layer.
8. The method of claim 1 , wherein forming the pass plug comprises:
forming a hole passing through the second region of the substrate;
conformally forming a first material layer and a second material layer in the hole; and
removing an upper portion of the first material layer and an upper portion of the second material layer.
9. The method of claim 8 , wherein forming the pass plug further comprises doping the second material layer with impurities.
10. The method of claim 1 , wherein:
the pass plug includes a first pass layer and a second pass layer surrounding the first pass layer, and
forming the contact comprises:
forming a hole passing through the second pass layer; and
forming the contact in the hole.