Thin film optical lens and method for coating a lens
A thin film optical lens and method for coating an optical substrate serves to apply alternating layers, with varying thicknesses, of a high index dielectric material and a low index dielectric material on first and second surfaces of an optical substrate. The high and low index dielectric materials are layered through thin film deposition. The low index dielectric material is SiO 2 . The high index dielectric material is ZrO 2 and/or Indium Zinc Oxide. The spectral results from application of high and low index dielectric materials reduce infrared radiation, block HEV light transmission, and reduce backside ultraviolet reflections, while also increasing visible (ultraviolet) light transmission through the optical substrate. Thus, the layering of dielectric materials on the first surface of optical substrate reflects up to 40% of the infrared radiation; and the second surface of optical substrate transmits up to 99% of ultraviolet light in the wavelength range between 300 to 400 nanometers.
1. A method of coating a thin film optical lens, the method comprising:
providing an optical substrate, the optical substrate comprising a first surface and an opposing second surface, the first surface being operable to at least partially reflect infrared radiation, the second surface being operable to at least partially transmit ultraviolet light in the wavelength range between 300 to 400 nanometers;
cleaning the surfaces of the optical substrate;
applying a low index dielectric material and a high index dielectric material on at least the first surface of the optical substrate, the low index dielectric material and the high index dielectric material being applied in the following order:
applying about 145.00 nanometers of the low index dielectric material on at least the first surface of the optical substrate;
applying about 15.00 nanometers of the high index dielectric material on at least the first surface of the optical substrate;
applying about 17.00 nanometers of the low index dielectric material on at least the first surface of the optical substrate;
applying about 104.50 nanometers of the high index dielectric material on at least the first surface of the optical substrate;
applying about 153.00 nanometers of the low index dielectric material on at least the first surface of the optical substrate;
applying about 103.00 nanometers of the high index dielectric material on at least the first surface of the optical substrate; and
applying about 75.00 nanometers of the low index dielectric material on at least the first surface of the optical substrate,
whereby the optical substrate reduces transmission of infrared radiation, blocks high-energy visible light transmission, and reduces backside reflection of ultraviolet light from the lens to enhance viewing characteristics of the optical substrate,
whereby the applied dielectric materials enable the first surface to reflect up to 40 percent of the infrared radiation,
whereby the applied dielectric materials enable the second surface to transmit about 99 percent of the ultraviolet light in the wavelength range between 300 to 400 nanometers.
2. The method of claim 1 , further comprising hand-cleaning the surfaces of the optical substrate.
3. The method of claim 1 , further comprising flipping the optical substrate from the first surface to the second surface during application of the dielectric materials.
4. The method of claim 1 , wherein the optical substrate comprises a viewing lens.
5. The method of claim 1 , further comprising integrating the optical substrate into a device.
6. The method of claim 1 , wherein the low index dielectric material comprises SiO 2 .
7. The method of claim 6 , wherein the SiO 2 comprises a refractive index of 1.46.
8. The method of claim 1 , wherein the high index dielectric material comprises ZrO 2 .
9. The method of claim 8 , wherein the ZrO 2 comprises a refractive index of 2.06.
10. The method of claim 1 , wherein the high index dielectric material comprises Indium Zinc Oxide.
11. The method of claim 1 , wherein the dielectric materials are applied with a thin film deposition mechanism.
12. The method of claim 11 , wherein the thin film deposition mechanism comprises an electron beam evaporation and a magnetron reactive sputtering.