Semiconductor device including an exposed solderable element
A semiconductor device, a semiconductor package, and a method of manufacturing the same are provided. The semiconductor device includes an electronic component, a first thermal conductive layer, a second thermal conductive layer, and a solderable element. The first thermal conductive layer is disposed adjacent to a surface of the electronic component. The second thermal conductive layer is disposed on the first thermal conductive layer and exposes a portion of the first thermal conductive layer. The solderable element is disposed on the second thermal conductive layer.
1. A semiconductor device, comprising:
an electronic component having a surface;
a first thermal conductive layer disposed adjacent to the surface of the electronic component and having a plurality of first thermal conductive particles;
a second thermal conductive layer disposed over the first thermal conductive layer and exposing a portion of the first thermal conductive layer, the second thermal conductive layer having a plurality of second thermal conductive particles; and
at least a solderable element disposed on the second thermal conductive layer,
wherein in a cross-sectional view, a number of the plurality of first thermal conductive particles in a first portion of the first thermal conductive layer is less than a number of the plurality of the second thermal conductive particles in a second portion of the second thermal conductive layer, and an area of the first portion is substantially equal to an area of the second portion.
2. The semiconductor device according to claim 1 , wherein the first thermal conductive layer comprises a monolithic layer exposing a portion of the surface of the electronic component, wherein a width of the first thermal conductive layer is greater than at least an half of a width of the electronic component.
3. The semiconductor device according to claim 2 , wherein the electronic component has a first side and a second side opposite to the first side, and the monolithic layer has a first lateral surface closer to the first side than to the second side and a second lateral surface closer to the second side than to the first side, and wherein the first lateral surface is spaced apart from the first side by a first distance, the second lateral surface is spaced apart from the second side by a second distance different from the first distance.
4. The semiconductor device according to claim 1 , wherein the first thermal conductive layer comprises a first adhesive material, and the first thermal conductive particles embedded in the first adhesive material, wherein the first adhesive material has a first region, a second region, and a third region between the first region and the second region, and wherein in the cross-sectional view a number of the first thermal conductive particles contained in the first region and a number of the first thermal conductive particles contained in the second region are both greater than a number of the first thermal conductive particles contained in the third region.
5. The semiconductor device according to claim 4 , wherein the first adhesive material has a fourth region and a fifth region vertically non-overlapped with the solderable element, the fourth region is between the first region and the third region, and the fifth region is between the third region and the second region, wherein a number of the first thermal conductive particles contained in the fourth region is less than each of the number of the first thermal conductive particles contained in the first region and the number of the first thermal conductive particles contained in the third region, and wherein a number of the first thermal conductive particles contained in the fifth region is less than each of the number of the first thermal conductive particles contained in the third region and the number of the first thermal conductive particles contained in the second region.
6. The semiconductor device according to claim 1 , wherein in a bottom view, the first thermal conductive layer has a first side, a second side opposite to the second side and a third side extending between the first side and the second side, the electronic component has a fourth side and a fifth side connected with the fourth side, and wherein the first side is inwardly recessed compared to the fourth side, and the third side is inwardly recessed compared to the fifth side.
7. The semiconductor device according to claim 6 , wherein in the bottom view, the electronic component has a sixth side opposite to the fourth side and a seventh side opposite to the fifth side, the first thermal conductive layer is surrounded by fourth side, fifth side, the sixth side and the seventh side of the electronic component.
8. The semiconductor device according to claim 1 , wherein in a bottom view, the second thermal conductive layer is around the solderable element.
9. The semiconductor device according to claim 1 , wherein the second thermal conductive layer comprises a first monolithic structure and a second monolithic structure separated from each other, a width of a first continuous interface between the first monolithic structure and the first thermal conductive layer is less than a width of a second continuous interface between the second monolithic structure and the first thermal conductive layer in a cross-sectional view.
10. The semiconductor device according to claim 1 , wherein the second thermal conductive layer comprises a plurality of separated parts, and at least one of the plurality of separated parts has a thickness less than a thickness of the first thermal conductive layer.