Silicon transformer integrated chip
A transformer includes a silicon substrate, a plurality of metal layers and a plurality of insulating layers laminated on the silicon substrate, a bottom winding of a metal contacting a first metal layer and a second metal layer of the plurality of metal layers, a first insulating layer on the bottom winding, a core on the first insulating layer, a second insulating layer on the core, a top winding of the metal that extends around the core and a portion of the second insulating layer, and a third insulating layer on the top winding. At least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.
1. An electronic component comprising:
a redistribution layer including a metal layer and an insulating layer;
a silicon substrate including a first transistor and a second transistor; and
a magnetic component that includes a first metal winding that extends around a core and that is connected to the metal layer; wherein
the first metal winding is thicker than the metal layer.
2. The electronic component of claim 1 , further comprising a PN junction between the first transistor and the second transistor.
3. The electronic component of claim 1 , further comprising a through-silicon via that extends through at least a portion of the silicon substrate and that connects the metal layer and the first metal winding.
4. The electronic component of claim 1 , wherein a portion of the first metal winding is in direct contact with the silicon substrate.
5. The electronic component of claim 1 , wherein the redistribution layer and the magnetic component are on opposite sides of the silicon substrate.
6. The electronic component of claim 1 , wherein the redistribution layer and the magnetic component are on a same side of the silicon substrate.
7. The electronic component of claim 1 , wherein
the magnetic component is a transformer and further includes a second metal winding; and
the second metal winding extends around the core and is not electrically connected to the first metal winding.
8. The electronic component of claim 7 , wherein
the first transistor is connected to the first metal winding; and
the second transistor is connected to the second metal winding.
9. The electronic component of claim 7 , wherein the first metal winding and the second metal winding are electrically isolated from each other.
10. The electronic component of claim 7 , wherein the second metal winding is thicker than the metal layer.
11. The electronic component of claim 7 , wherein the second metal winding includes an electroplated copper layer.
12. The electronic component of claim 1 , wherein the magnetic component is an inductor.
13. The electronic component of claim 1 , wherein the first metal winding includes an electroplated copper layer.
14. A transformer comprising:
a silicon substrate; and
an insulating layer that is on the silicon substrate and that includes:
a plurality of metal layers;
a core;
a bottom winding of a metal that extends below the core and that contacts a first metal layer and a second metal layer of the plurality of metal layers; and
a top winding of the metal that extends around the core; wherein
at least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.
15. The transformer according to claim 14 , further comprising circuitry on the silicon substrate; wherein
the bottom winding, the top winding, and the core are on a same side of the silicon substrate as the circuitry.
16. The transformer according to claim 14 , further comprising a PN junction in the silicon substrate that isolates a primary side and a secondary side of the transformer.
17. The transformer according to claim 14 , wherein the bottom winding and the top winding include an electroplated copper layer.
18. The transformer according to claim 14 , wherein
the top winding and the bottom winding define a primary winding and a secondary winding; and
the primary winding and the secondary winding are connected to respective metal layers of the plurality of metal layers and are not electrically connected to each other.
19. The transformer according to claim 14 , wherein the metal is copper.
20. A transformer comprising:
a silicon substrate;
circuitry that is located on a first side of the silicon substrate and that includes a plurality of metal layers; and
an insulating layer that is located on a second side of the silicon substrate and that includes:
a core;
a bottom winding of a metal that extends below the core and that contacts the circuitry through the silicon substrate; and
a top winding of the metal that extends around the core and that contacts the circuitry through the silicon substrate; wherein
at least one of the top winding and the bottom winding is thicker than each of the plurality of metal layers.
21. The transformer according to claim 20 , further comprising a PN junction in the silicon substrate isolating a primary side from a secondary side of the transformer.
22. The transformer according to claim 20 , wherein the bottom winding and the top winding include an electroplated copper layer.
23. The transformer according to claim 20 , wherein
the top winding and the bottom winding define a primary winding and a secondary winding; and
the primary winding and the secondary winding are connected to respective metal layers of the plurality of metal layers and are not electrically connected to each other.
24. The transformer according to claim 20 , wherein the metal is copper.
25. The transformer according to claim 20 , wherein
the silicon substrate includes an oxide layer;
the bottom winding is connected to the circuitry through the silicon substrate and the oxide layer; and
the top winding is connected to the circuitry through the silicon substrate and the oxide layer.