Semiconductor device and electronic equipment
Provided is a semiconductor device including a drive circuit which is provided on one surface of a semiconductor substrate and drives a light emitting element, one of or a plurality of the light emitting elements which is provided on another surface of the semiconductor substrate, and a through electrode which penetrates the semiconductor substrate and electrically connects the drive circuit with the light emitting element.
1. A semiconductor device, comprising:
a first semiconductor substrate;
a light emitting element on a first surface of the first semiconductor substrate;
a drive circuit on a second surface of the first semiconductor substrate, wherein the drive circuit is configured to drive the light emitting element;
a first through electrode and a second through electrode that penetrate the first semiconductor substrate, wherein
the first through electrode and the second through electrode electrically connect the drive circuit with the light emitting element, and
the light emitting element on the first surface of the first semiconductor substrate straddles the first through electrode and the second through electrode that penetrate the first semiconductor substrate;
a first electrode on a first side of the light emitting element, wherein
the first through electrode and the second through electrode are electrically connected to the first electrode, and
the first electrode is on the first surface of the first semiconductor substrate;
a second electrode on a second side of the light emitting element, wherein the first electrode faces the second electrode; and
a third electrode on the first surface of the first semiconductor substrate, wherein the second electrode is electrically connected to the third electrode.
2. The semiconductor device according to claim 1 , wherein the light emitting element is configured to emit at least one of a red light, a blue light, or a green light.
3. The semiconductor device according to claim 1 , wherein
each of the first through electrode and the second through electrode includes:
a through hole that penetrates the first semiconductor substrate, and
a metal film that is buried in the through hole.
4. The semiconductor device according to claim 1 , further comprising
a light-shielding film on a periphery of the light emitting element on the first surface of the first semiconductor substrate.
5. The semiconductor device according to claim 1 , further comprising
a heat dissipation film on a periphery of the light emitting element on the first surface of the first semiconductor substrate.
6. The semiconductor device according to claim 5 , further comprising:
a third through electrode that penetrates the first semiconductor substrate and connects the heat dissipation film with the second surface of the first semiconductor substrate.
7. The semiconductor device according to claim 1 , further comprising
a transparent resin that covers the light emitting element.
8. The semiconductor device according to claim 1 , wherein
the drive circuit includes:
a plurality of transistors; and
a plurality of wires, wherein
the plurality of transistors and the plurality of wires are covered with an insulating film, and
a bump that electrically connects a second semiconductor substrate is on a first side of the insulating film far from the first semiconductor substrate.
9. An electronic equipment, comprising:
one or more semiconductor devices including:
a first semiconductor substrate;
a light emitting element on a first surface of the first semiconductor substrate;
a drive circuit on a second surface of the first semiconductor substrate, wherein the drive circuit is configured to drive the emitting element;
and
a first through electrode and a second through electrode that penetrate the first semiconductor substrate, wherein
the first through electrode and the second through electrode electrically connect the drive circuit with the light emitting element, and
the light emitting element on the first surface of the first semiconductor substrate straddles the first through electrode and the second through electrode that penetrate the first semiconductor substrate;
a first electrode on a first side of the light emitting element, wherein
the first through electrode and the second through electrode are electrically connected to the first electrode, and
the first electrode is on the first surface of the first semiconductor substrate;
a second electrode on a second side of the light emitting element, wherein the first electrode faces the second electrode; and
a third electrode on the first surface of the first semiconductor substrate, wherein the second electrode is electrically connected to the third electrode.