Photodetectors, preparation methods for photodetectors, photodetector arrays, and photodetection terminals
View Patent ↗A photodetector, a preparation method for a photodetector, a photodetector array and a photodetection terminal. The photodetector comprises a substrate ( 11 ) and an optical resonant cavity ( 10 ) formed on the substrate ( 11 ). The optical resonant cavity ( 10 ) may comprise: a light absorption layer ( 13 ) having a light-entrance outer surface and a bottom outer surface which are opposite to each other, and an outer sidewall located between the light-entrance surface and the bottom surface; a light-strap structural layer ( 14 ) covering the light-entrance surface; and a light-reflection structural layer ( 12 ) covering the bottom outer surface and/or the outer sidewall of the light absorption layer ( 13 ), wherein the light-reflection structural layer ( 12 ) is configured to reflect external light entering the optical resonant cavity ( 10 ) by means of the light-trap structural layer ( 14 ) to increase a light propagation distance of the external light in the light absorption layer ( 13 ), thereby effectively improving the photon absorption efficiency of the photodetector.
1. A photodetector device comprising:
an absorption material having a top side and a bottom side;
a first deep trench structure configured adjacent to a first lateral side of the absorption material, the first deep trench structure comprising a first inner wall and a first outer wall, the first outer wall comprising a first light absorption surface of incoming photons;
a second deep trench structure configured adjacent to a second lateral side of the absorption material;
an active region on the top side of the absorption material;
a light-trapping region overlaying the active region comprising a first structure and a second structure separated by a predetermined spacing, the predetermined spacing being less than two microns and associated with a target wavelength and an absorption angle of incoming photons;
a substrate configured near the bottom side; and
a bottom reflection layer positioned between the substrate and the absorption material.
2. The device of claim 1 , wherein the first inner wall comprises a metal material and the first outer wall comprises an oxide material or a combination of different oxide materials.
3. The device of claim 1 , wherein the first structure and the second structure are characterized by a substantially rectangular or triangular shape.
4. The device of claim 1 , wherein the target wavelength is associated with a wavelength between 900 nm and 950 nm.
5. The device of claim 1 , wherein the substrate comprises an SOI structure.
6. The device of claim 1 , wherein the first deep trench structure comprises a reflection layer and an isolation layer.
7. The device of claim 1 , further comprising a passivation layer overlaying the active region.
8. The device of claim 1 , wherein the first inner wall comprises a Tungsten material.
9. The device of claim 1 , wherein the first light absorption surface is characterized by a surface roughness associated with etching, deposition or growth process.
10. The device of claim 1 , further comprising a microlens overlaying the light-trapping region.
11. The device of claim 1 , wherein the absorption material is characterized by a concentration gradient.
12. The device of claim 1 , wherein the active region further comprises a p-n junction region configured within the absorption material.