IP Library › Granted Patent US 12,152,940
Granted Patent B2
US 12,152,940 · App. 17/784,289 · Granted Nov 26, 2024

Sensor device

Inventors: Takahiro Wakabayashi (Kumamoto, JP); Kenichi Taguchi (Kumamoto, JP)
Assignee: Sony Semiconductor Solutions Corporation
G01J5/061G01J2005/0077G01J2005/062
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Quick Facts
Patent No.
US 12,152,940
App. No.
17/784,289
Granted
Nov 26, 2024
Kind
B2
Abstract

A sensor device according to the present disclosure includes a Peltier element, a sensor element thermally connected to a cooling surface of the Peltier element, and a window member that faces a light receiving surface of the sensor element and is made of borosilicate glass.

Claims (23)

1. A sensor device comprising:

a Peltier element;

a sensor element thermally connected to a cooling surface of the Peltier element;

a window member that faces a light receiving surface of the sensor element and is made of borosilicate glass; and

a support member, wherein the support member has an opening that allows passage of incident light and a frame that supports the window member, and wherein the window member is disposed above and overlaps a portion of the frame.

2. The sensor device according to claim 1 , wherein

an effective pixel region that receives incident light from the window member is arranged on the light receiving surface of the sensor element.

3. The sensor device according to claim 2 , wherein

the frame is arranged outside the effective pixel region in a plan view.

4. The sensor device according to claim 2 , wherein

an area of the opening is larger than an area of the effective pixel region.

5. The sensor device according to claim 1 ,

the window member is arranged to cover the opening.

6. The sensor device according to claim 1 , wherein

the cooling surface of the Peltier element is larger than a surface of the sensor element opposite to the light receiving surface.

7. The sensor device according to claim 1 , further comprising

a package substrate that is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.

8. The sensor device according to claim 7 , further comprising

a relay substrate that is arranged between the cooling surface of the Peltier element and the sensor element, and relays electrical connection between the package substrate and the sensor element.

9. The sensor device according to claim 1 , wherein

the sensor element is a short wave infrared (SWIR) image sensor.

10. The sensor device according to claim 8 , wherein the sensor element and the relay substrate are electrically connected by a bonding wire and a bonding pad.

11. The sensor device according to claim 8 , wherein the relay substrate is made of ceramic.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2022
From: WAKABAYASHI, TAKAHIRO; TAGUCHI, KENICHI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 060164/0598 →
Priority Claims (1)
JP 2019-239632 · Dec 27, 2019 · national
Continuity (1)
Related Publication 20220381617A1 · Dec 1, 2022