Method for treating substrate

1. A method for treating a substrate, the method comprising:

providing a substrate treating apparatus comprising a processing chamber, a drying chamber, and a buffer unit, and providing a plurality of bake chambers located outside of the substrate treating apparatus;

selecting a bake chamber of the plurality of bake chambers;

transferring the selected bake chamber from the outside of the substrate treating apparatus to inside of the substrate treating apparatus to position the selected bake chamber at an outermost edge of the substrate treating apparatus;

supplying an organic solvent onto the substrate, in the processing chamber, to treat the substrate;

drying the substrate, in the drying chamber, to remove the organic solvent on the substrate;

transferring the substrate from the drying chamber to the buffer unit;

transferring the substrate from the buffer unit to the selected bake chamber; and

baking the substrate, in the selected bake chamber, to thermally decompose an impurity of the organic solvent adhering to the substrate,

wherein the drying chamber, the processing chamber, the buffer unit, and the selected bake chamber are sequentially arranged between opposing sides of the substrate treating apparatus, such that the processing chamber is located adjacent to the drying chamber and the buffer unit,

wherein the plurality of bake chambers include different heaters,

wherein the selected bake chamber is removably mounted in the substrate treating apparatus, and

wherein the heaters of the plurality of bake chambers are selected from a group consisting of a flash lamp, an infrared lamp, an ultraviolet lamp, a laser, and a heating wire.

2. The method of claim 1 , wherein in the drying, a supercritical fluid is supplied onto the substrate to dry the substrate.

3. The method of claim 1 , wherein, in the baking of the substrate, an inert gas is supplied into a housing of the selected bake chamber.

4. The method of claim 3 , wherein the inert gas is supplied by a gas supply member attached to one sidewall of the housing.

5. The method of claim 4 , wherein the inert gas is exhausted by an exhaust line attached to an other sidewall of the housing and located in an area facing the gas supply member.

6. The method of claim 5 , wherein the inert gas is supplied to a position higher than a position of the substrate.

7. The method of claim 1 , wherein the impurity includes carbon.

8. The method of claim 7 , wherein, in the baking of the substrate, the substrate is heated to a temperature of 600° C. or more.

9. The method of claim 1 , wherein, in the drying of the substrate, a fluid is supplied to the substrate to remove the organic solvent on the substrate.

10. The method of claim 9 , wherein the fluid is carbon dioxide.

11. The method of claim 10 , wherein the organic solvent is isopropyl alcohol.