Image sensor
An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.
1. An image sensor comprising:
a substrate including a first surface and a second surface, the substrate including a plurality of pixel regions, the plurality of pixel regions including a pair of dummy pixel regions disposed adjacent to each other, and each of the pair of dummy pixel regions comprising a photodiode converter;
a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions, the pixel separation structure being disposed in a pixel separation trench extending from the second surface of the substrate toward the first surface of the substrate, the pixel separation structure including an insulation layer and a conductive layer, the insulation layer being disposed on an inner wall of the pixel separation trench, the conductive layer being disposed on the insulation layer to fill an inside of the pixel separation trench;
a plurality of transistors provided in the plurality of pixel regions, wherein the plurality of transistors are offset from the pair of dummy pixel regions;
a transfer gate of one of the plurality of transistors on the first surface of the substrate;
a pixel separation contact electrically connected to the pixel separation structure and being configured to apply a negative bias to the pixel separation structure; and
a micro lens on the second surface of the substrate,
wherein a bottom surface of the pixel separation structure between the pair of dummy pixel regions is between the first surface of the substrate and the second surface of the substrate, and
wherein, along a vertical direction, the photodiode converter of each of the pair of dummy pixel regions extends between the substrate and the pixel separation contact.
2. The image sensor of claim 1 , wherein the conductive layer includes at least one of impurity-doped or undoped polysilicon, metal silicide, or a metal-containing layer.
3. The image sensor of claim 1 , wherein the pixel separation contact is disposed on the second surface of the substrate, a bottom surface of the pixel separation contact is in contact with an upper surface of the conductive layer, and the pixel separation contact includes a conductive material.
4. The image sensor of claim 1 , wherein the bottom surface of the pixel separation structure between the pair of dummy pixel regions is spaced apart from the first surface of the substrate in the vertical direction.
5. The image sensor of claim 4 , wherein the substrate has a first height in the vertical direction, and the pixel separation structure between the pair of dummy pixel regions has a second height smaller than the first height in the vertical direction.
6. The image sensor of claim 1 , wherein in a plan view, the pixel separation structure has a net shape, grid shape or a mesh shape, and
in a plan view, the pixel separation structure surrounds each of the plurality of pixel regions.
7. The image sensor of claim 1 , wherein the pixel separation contact is disposed to vertically overlap a portion of the pixel separation structure between the pair of dummy pixel regions.
8. The image sensor of claim 7 , wherein the pair of dummy pixel regions is disposed at a periphery of the plurality of pixel regions.
9. The image sensor of claim 7 , wherein the pair of dummy pixel regions is disposed at a center portion of the plurality of pixel regions.
10. The image sensor of claim 7 , wherein the pixel separation contact is disposed on the second surface of the substrate in a position vertically overlapping both the pair of dummy pixel regions.
11. An image sensor comprising:
a substrate including a first surface and a second surface, the substrate including a plurality of pixel regions, the plurality of pixel regions including a pair of dummy pixel regions disposed adjacent to each other, and each of the pair of dummy pixel regions comprising a photodiode converter;
a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions, the pixel separation structure being disposed in a pixel separation trench extending from the second surface of the substrate toward the first surface of the substrate;
a plurality of transistors provided in the plurality of pixel regions, wherein the plurality of transistors are offset from the pair of dummy pixel regions;
a transfer gate of one of the plurality of transistors on the first surface of the substrate, a portion of the transfer gate extending toward an inside of the substrate;
a pixel separation contact disposed on the second surface of the substrate at a periphery of the plurality of pixel regions, the pixel separation contact electrically connected to the pixel separation structure and being configured to apply a negative bias to the pixel separation structure; and
a micro lens on the second surface of the substrate,
wherein a bottom surface of the pixel separation structure between the pair of dummy pixel regions is between the first surface of the substrate and the second surface of the substrate, and
wherein, along a vertical direction, the photodiode converter of each of the pair of dummy pixel regions extends between the substrate and the pixel separation contact.
12. The image sensor of claim 11 , wherein the pixel separation structure includes:
an insulation layer disposed on an inner wall of the pixel separation trench; and
a conductive layer being disposed on the insulation layer to fill an inside of the pixel separation trench.
13. The image sensor of claim 12 , wherein the conductive layer includes at least one of impurity-doped or undoped polysilicon, metal silicide, or a metal-containing layer.
14. The image sensor of claim 12 , wherein the pixel separation contact is disposed on the second surface of the substrate, a bottom surface of the pixel separation contact is in contact with an upper surface of the conductive layer, and the pixel separation contact includes a conductive material.
15. The image sensor of claim 11 , wherein the bottom surface of the pixel separation structure between the pair of dummy pixel regions is spaced apart from the first surface of the substrate in the vertical direction.
16. The image sensor of claim 15 , wherein the substrate has a first height in the vertical direction, and the pixel separation structure between the pair of dummy pixel regions has a second height smaller than the first height in the vertical direction.
17. The image sensor of claim 11 , wherein in a plan view, the pixel separation structure has a net shape, grid shape or a mesh shape, and
in a plan view, the pixel separation structure surrounds each of the plurality of pixel regions.
18. The image sensor of claim 11 , wherein the pixel separation contact is disposed to vertically overlap a portion of the pixel separation structure between the pair of dummy pixel regions.
19. The image sensor of claim 18 , wherein the pixel separation contact is disposed on the second surface of the substrate in a position vertically overlapping both the pair of dummy pixel regions.
20. The image sensor of claim 18 , wherein a width of the pixel separation contact in a first horizontal direction is greater than a distance between the pair of dummy pixel regions in the first horizontal direction.