Optical sensor and signal readout method thereof, optical area sensor and signal readout method thereof

1. A signal readout method of an optical sensor, comprising:

performing light-receiving by a light-receiving element which has a semiconductor junction fully depleted and a potential curve of electrons having a negative slope toward a floating diffusion and connected to an uppermost position of an electronic potential well of the floating diffusion while keeping its negative slope state;

transferring electric charges generated in the light-receiving element in response to the light-receiving to the floating diffusion according to the potential curve, accumulating the electric charges in the floating diffusion and converting the accumulated electric charges to a voltage signal; and

performing read-out of the voltage signal at least three times during each frame period provided in a period of the light-receiving, without intervention of resetting an electric potential of the floating diffusion between the read-outs, obtaining differential signals between the voltage signals that were read-out, and thereby obtaining least two signals representing amounts of the electric charges accumulated in respective periods that do not overlap to each other.

2. The signal readout method of an optical sensor according to claim 1 , wherein an accumulation period in the accumulating of the electrons is 1 μs or less.

3. An optical area sensor comprising:

an optical sensor pixel circuit; and

an analog memory circuit unit,

wherein

the optical sensor pixel circuit unit includes:

an optical sensor pixel circuit which has two output systems alternatively used on a time axis, a light-receiving element and a floating diffusion that has a first end electrically directly connected to the light-receiving element, has a second end connected to a signal read-out circuit, accumulates electric charges generated by light input to the light-receiving element and converts the electric charges to a voltage signal;

the light-receiving element having a semiconductor junction that is completely depleted and a potential curve of electrons that has a negative slope toward the floating diffusion and connected to an uppermost position of an electronic potential well of the floating diffusion while keeping its negative slope state; and

an intra-pixel correlated double sampling circuit which outputs a signal (ab 1 ) produced by noise cancellation based on a first output (a 1 ) and a second output (b 1 ) based on an amount of light-electric charges generated in the light-receiving element by light-irradiation, which is output from a first of the two output systems; and

the analog memory circuit unit includes:

an analog memory array in which a plurality of memory cells holding one of the signal (ab 1 ), the first output (a 2 ) and the second output (b 2 ) output from a second of the two output systems are arranged in rows and columns;

a memory cell row selection switch array for selecting any of the rows of the memory cells; and

a memory readout circuit for reading out a signal held in any of the memory cells,

wherein, when the first of the two output systems is selected, the optical area sensor outputs from the optical sensor pixel circuit unit the signal (ab 1 ) once in each frame period, stores the signal (ab 1 ) in a memory cell of the analog memory circuit unit, and reads out the signal (ab 1 ), and

wherein, when the second of the two output systems is selected, the optical area sensor outputs from the optical sensor circuit unit the non-noise canceled signal at least three times in each frame period provided in a period of the light-receiving, without intervention of resetting an electric potential of the floating diffusion between the outputs, storing the output non-noise canceled signals in respective memory cells of the analog memory circuit unit, obtains differential signals between the stored non-noise cancelled signals, and thereby reads out at least two noise-cancelled signals representing amounts of the electric charges accumulated in respective periods that do not overlap to each other.

4. The optical area sensor according to claim 3 , wherein a capacitance (C PD ) of the light-receiving element and a capacitance (CFD) of the floating diffusion have the following relationship:

0.0008≤( C PD )/( C FD )≤0.8;

4.0×10−18 F ≤( CPD )≤4.0×10−16 F ; and

5.0×10−16 F ≤( CFD )≤5.0×10−15 F.

5. The optical area sensor according to claim 3 , wherein the optical sensor pixel circuit unit and the analog memory circuit unit are disposed adjacently to each other on a same planar.

6. The optical area sensor according to claim 3 , wherein the optical sensor pixel circuit unit and the analog memory circuit unit are stacked adjacently to each other.