Transistor and electronic device
A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.
1. A semiconductor device comprising:
an oxide semiconductor film;
a source electrode and a drain electrode over the oxide semiconductor film;
an interlayer insulating film covering the oxide semiconductor film, the source electrode, and the drain electrode; and
a gate electrode over the oxide semiconductor film,
wherein the interlayer insulating film includes an opening to overlap with a region between the source electrode and the drain electrode,
wherein the gate electrode is in the opening in the interlayer insulating film, and
wherein the source electrode and the drain electrode have compressive stress.
2. A semiconductor device comprising:
an oxide semiconductor film;
a source electrode and a drain electrode over the oxide semiconductor film;
a barrier insulating film covering the oxide semiconductor film, the source electrode, and the drain electrode;
an interlayer insulating film over the barrier insulating film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the gate insulating film,
wherein the barrier insulating film and the interlayer insulating film include an opening to overlap with a region between the source electrode and the drain electrode,
wherein the gate insulating film and the gate electrode are in the opening in the barrier insulating film and the interlayer insulating film,
wherein the barrier insulating film includes silicon nitride,
wherein the source electrode and the drain electrode have compressive stress, and
wherein in the oxide semiconductor film, a first region overlapping with the source electrode or the drain electrode has a lower density than a second region overlapping with the gate electrode.
3. The semiconductor device according to claim 2 ,
wherein the first region has a higher hydrogen concentration than the second region.
4. The semiconductor device according to claim 1 ,
wherein magnitude of the compressive stress is higher than or equal to 1000 MPa.
5. The semiconductor device according to claim 1 ,
wherein the source electrode and the drain electrode each are a nitride including tantalum.
6. The semiconductor device according to claim 5 ,
wherein the source electrode and the drain electrode are deposited by a sputtering method.
7. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes any one or more selected from In, Ga, and Zn.
8. An electronic device comprising the semiconductor device according to claim 1 .
9. The semiconductor device according to claim 2 ,
wherein magnitude of the compressive stress is higher than or equal to 1000 MPa.
10. The semiconductor device according to claim 2 ,
wherein the source electrode and the drain electrode each are a nitride including tantalum.
11. The semiconductor device according to claim 10 ,
wherein the source electrode and the drain electrode are deposited by a sputtering method.
12. The semiconductor device according to claim 2 ,
wherein the oxide semiconductor film includes any one or more selected from In, Ga, and Zn.
13. An electronic device comprising the semiconductor device according to claim 2 .