Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, method for manufacturing electronic device, and resin
An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern thus formed has excellent LER and collapse suppressing ability. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a compound that generates an acid upon irradiation with actinic rays or radiation, and a resin whose polarity increases by the action of an acid, in which the resin includes a repeating unit represented by General Formula (B-1), and a content of the repeating unit represented by General Formula (B-1) is 5% to 70% by mass with respect to all the repeating units in the resin. In General Formula (B-1), Ri represents a hydrogen atom or an organic group, the Ring W1 represents a ring which includes at least one carbon atom and one nitrogen atom, and may have a substituent
1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
a compound that generates an acid upon irradiation with actinic rays or radiation; and
a resin whose polarity increases by the action of an acid,
wherein the resin includes a repeating unit represented by General Formula (B-1),
a content of the repeating unit represented by General Formula (B-1) is 5% to 70% by mass with respect to all the repeating units in the resin,
the repeating unit represented by General Formula (B-1) includes a repeating unit represented by General Formula (B-4), and
a content of a halogen atom selected from a fluorine atom or an iodine atom in the resin is 20% by mass or more,
in General Formula (B-1), R 1 represents a hydrogen atom or an organic group, the Ring W1 represents a ring which includes at least one carbon atom and one nitrogen atom, and may have a substituent,
in General Formula (B-4), X and Y each independently represent a divalent linking group selected from the group consisting of —CO—, —SO—, and —SO 2 , R 3 represents a hydrogen atom or an organic group, W 1 and W 2 each independently represent —C(R 7 ) (R 10 )— or a group represented by General Formula (B-5), and R 7 , R 8 , R 9 , and R 10 each independently represent a hydrogen atom or a substituent
2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the resin does not substantially include a repeating unit including a lactone structure but includes a repeating unit having an acid-decomposable group and the repeating unit represented by General Formula (B-1), and
the content of the repeating unit represented by General Formula (B-1) is 30% by mass or less with respect to all the repeating units in the resin.
3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2 ,
wherein the resin has a weight-average molecular weight of 3,500 to 25,000.
4. A resist film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to claim 2 .
5. A pattern forming method comprising:
a resist film forming step of forming a resist film using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 2 ;
an exposing step of exposing the resist film; and
a developing step of developing the exposed resist film using a developer.
6. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,
wherein the resin has a weight-average molecular weight of 3,500 to 25,000.
7. A resist film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 .
8. A pattern forming method comprising:
a resist film forming step of forming a resist film using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ;
an exposing step of exposing the resist film; and
a developing step of developing the exposed resist film using a developer.
9. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 8 .
10. A resin whose polarity increases by the action of an acid,
wherein the resin includes a repeating unit represented by General Formula (B-1) and a repeating unit having an acid-decomposable group and being different from the repeating unit represented by General Formula (B-1),
a content of the repeating unit represented by General Formula (B-1) is 5% to 70% by mass with respect to all the repeating units in the resin,
the repeating unit represented by General Formula (B-1) includes a repeating unit represented by General Formula (B-4), and
a content of a halogen atom selected from a fluorine atom or an iodine atom in the resin is 20% by mass or more,
in General Formula (B-1), R 1 represents a hydrogen atom or an organic group, the Ring W1 represents a ring which includes at least one carbon atom and one nitrogen atom, and may have a substituent,
in General Formula (B-4), X and Y each independently represent a divalent linking group selected from the group consisting of —CO—, —SO—, and —SO 2 , R 3 represents a hydrogen atom or an organic group, W 1 and W 2 each independently represent —C(R 7 ) (R 10 )— or a group represented by General Formula (B-5), and R 7 , R 8 , R 9 , and R 10 each independently represent a hydrogen atom or a substituent
11. The resin according to claim 10 ,
wherein the resin does not substantially include a repeating unit including a lactone structure but includes a repeating unit having the acid-decomposable group and the repeating unit represented by General Formula (B-1), and
the content of the repeating unit represented by General Formula (B-1) is 30% by mass or less with respect to all the repeating units in the resin.
12. The resin according to claim 10 ,
wherein the resin has a weight-average molecular weight of 3,500 to 25,000.