Method and system for dynamically adjusting state check start time of word lines
A memory system may include: a memory device including at least one word line and at least one memory cell coupled to the word line, and a controller including a write buffer configured to store a program command and data received from a host, the controller suitable for controlling a program operation of storing the data in the word line based on the program command, setting state check time of the word line during a performance period of the program operation, and checking a state of the word line according to a timeout signal generated based on the set state check time.
1. A memory system, comprising:
a memory device including at least one word line and at least one memory cell coupled to the word line; and
a controller including a write buffer configured to store a program command and data received from a host, the controller suitable for controlling a program operation of storing the data in the memory cell coupled to the word line based on the program command, setting state check time of the word line during a performance period of the program operation, and checking a state of the word line according to a timeout signal generated based on the set state check time,
wherein the controller sets the state check time based on a sum of a basic state check time, which is determined based on the memory cell, and an additional state check time which is determined based on a target program response time, a maximum program time and a minimum program time of the word line.
2. The memory system of claim 1 , wherein the controller includes:
a state check time setting logic suitable for setting the state check time of the word line;
a timeout generator suitable for generating the timeout signal based on the state check time set by the state check time setting unit; and
a state check performing logic suitable for checking the state of the word line according to the timeout signal.
3. The memory system of claim 2 , wherein:
the state check time setting unit is configured to check whether the memory device is in a garbage collection state, and
when the memory device is in the garbage collection state, the state check time setting unit is configured to check whether the write buffer is in a saturation state.
4. The memory system of claim 3 , wherein the state check time setting logic is configured to compare target program response time with the basic state check time when the write buffer is not in the saturation state.
5. The memory system of claim 4 , wherein the state check time setting logic is configured to compare a difference between the target program response time and the basic state check time with a difference between maximum word line program time and minimum word line program time, when the target program response time is greater than the basic state check time.
6. The memory system of claim 5 , wherein the state check time setting logic sets the state check time based on the basic state check time and the additional state check time.
7. The memory system of claim 6 , wherein the additional state check time is calculated based on the difference between the maximum word line program time and the minimum word line program time, when the difference between the target program response time and the basic state check time is less than the difference between the maximum word line program time and the minimum word line program time.
8. The memory system of claim 6 , wherein the additional state check time is calculated based on the difference between the maximum word line program time and the minimum word line program time and a ratio of target usage of the write buffer to actual usage of the write buffer, when the difference between the target program response time and the basic state check time is less than the difference between the maximum word line program time and the minimum word line program time.
9. The memory system of claim 6 , wherein the additional state check time is calculated based on the difference between the target program response time and the basic state check time, when the difference between the target program response time and the basic state check time is equal to or greater than the difference between the maximum word line program time and the minimum word line program time.
10. The memory system of claim 6 , wherein the additional state check time is calculated based on the difference between the target program response time and the basic state check time and a ratio of target usage of the write buffer to actual usage of the write buffer, when the difference between the target program response time and the basic state check time is equal to or greater than the difference between the maximum word line program time and the minimum word line program time.
11. A method of operating a memory system, comprising:
performing a program operation on at least one memory cell coupled to at least one word line;
setting state check time for the word line during a performance period of the program operation;
generating a timeout signal based on the state check time; and
checking a state of the word line according to the timeout signal,
wherein the state check time is set based on a sum of a basic state check time, which is determined based on the memory cell, and an additional state check time which is determined based on a target program response time, a maximum program time and a minimum program time of the word line.
12. The method of claim 11 , further comprising:
checking whether a memory device is in a garbage collection state.
13. The method of claim 12 , further comprising:
checking whether a write buffer is in a saturation state when the memory device is in performing the garbage collection state.
14. The method of claim 13 , further comprising:
comparing target program response time with the basic state check time when the write buffer is not in the saturation state.
15. The method of claim 14 , further comprising:
comparing a difference between the target program response time and the basic state check time with a difference between maximum word line program time and minimum word line program time, when the target program response time is greater than the basic state check time.
16. The method of claim 15 , further comprising:
setting the state check time based on the basic state check time and the additional state check time.
17. The method of claim 16 , wherein the additional state check time is calculated based on the difference between the maximum word line program time and the minimum word line program time, when the difference between the target program response time and the basic state check time is less than the difference between the maximum word line program time and the minimum word line program time.
18. The method of claim 16 , wherein the additional state check time is calculated based on the difference between the maximum word line program time and the minimum word line program time and a ratio of target usage of the write buffer to actual usage of the write buffer, when the difference between the target program response time and the basic TT state check time is less than the difference between the maximum word line program time and the minimum word line program time.
19. The method of claim 16 , wherein the additional state check time is calculated based on the difference between the target program response time and the basic state check time, when the difference between the target program response time and the basic state check time is equal to or greater than the difference between the maximum word line program time and the minimum word line program time.
20. The method of claim 16 , wherein the additional state check time is calculated based on the difference between the target program response time and the basic state check time and a ratio of target usage of the write buffer to actual usage of the write buffer, when the difference between the target program response time and the basic state check time is equal to or greater than the difference between the maximum word line program time and the minimum word line program time.
21. A memory system comprising:
a memory device including at least one memory cell coupled to at least one word line; and
a controller configured to:
perform a program operation on the memory cell;
determine a state check time for the word line;
generate a timeout signal based on the state check time; and
transmit, to the memory device, a state check command in response to the timeout signal such that the memory device checks a busy or ready state of the word line associated with the program operation on the memory cell and notifies the controller of the state of the word line,
wherein the state check time is determined based on a sum of a basic state check time and an additional state check time,
wherein the basic state check time is determined based on the memory cell, and
wherein the additional state check time is determined based on a target program response time, a maximum program time and a minimum program time of the word line.