Terahertz module
A terahertz module includes: a terahertz chip which includes an active device which emits a terahertz wave; and a dielectric substrate coupled to the terahertz chip. The terahertz chip includes a semiconductor substrate. The active device is disposed on an upper surface of the semiconductor substrate. A cutout is formed in a portion of a first side surface, among a plurality of side surfaces of the dielectric substrate, the cutout extending from an upper side of the first side surface to a lower side of the first side surface. The terahertz chip is fit into the cutout in such a direction that the upper surface of the semiconductor substrate is parallel to the first side surface and the semiconductor substrate is arranged in a bottom side of the cutout.
1. A terahertz module, comprising
a terahertz chip which includes an active device which emits a terahertz wave;
a dielectric substrate coupled to the terahertz chip, wherein
the terahertz chip includes a semiconductor substrate and the active device is disposed on an upper surface of the semiconductor substrate,
a cutout is formed in a portion of a first side surface, among a plurality of side surfaces of the dielectric substrate, the cutout extending from an upper side of the first side surface to a lower side of the first side surface,
the terahertz chip is fit into the cutout in such a direction that the upper surface of the semiconductor substrate is parallel to the first side surface and the semiconductor substrate is arranged in a bottom side of the cutout, and
the terahertz chip has a thickness which is equal to a depth of the cutout.
2. The terahertz module according to claim 1 , wherein
the cutout has a surface parallel to the first side surface, and
the semiconductor substrate has a lower surface in contact with a surface of the cutout parallel to the first side surface.
3. The terahertz module according to claim 1 , wherein
the dielectric substrate is a photonic crystal.
4. The terahertz module according to claim 3 , wherein
a waveguide for the terahertz wave is formed on the photonic crystal in a direction perpendicular to the upper surface of the semiconductor substrate.
5. The terahertz module according to claim 3 , wherein
a filter for passing or filtering out a predetermined frequency component of the terahertz wave is formed on the photonic crystal.
6. The terahertz module according to claim 3 , wherein
a planar lens for collecting the terahertz wave emitted by the active device is formed on the photonic crystal.
7. The terahertz module according to claim 3 , wherein
a plurality of the terahertz chips disposed in a row are coupled to the photonic crystal.
8. The terahertz module according to claim 1 , wherein
the active device is a resonant tunneling diode.
9. A terahertz module, comprising
a terahertz chip which includes an active device which emits a terahertz wave;
a dielectric substrate coupled to the terahertz chip, wherein
the terahertz chip includes a semiconductor substrate and the active device is disposed on an upper surface of the semiconductor substrate,
a cutout is formed in a portion of a first side surface, among a plurality of side surfaces of the dielectric substrate, the cutout extending from an upper side of the first side surface to a lower side of the first side surface, and
the terahertz chip is fit into the cutout in such a direction that the upper surface of the semiconductor substrate is parallel to the first side surface and the semiconductor substrate is arranged in a bottom side of the cutout, and
the terahertz chip has a thickness greater than a depth of the cutout.
10. The terahertz module according to claim 9 , wherein
the cutout has a surface parallel to the first side surface, and
the semiconductor substrate has a lower surface in contact with a surface of the cutout parallel to the first side surface.
11. The terahertz module according to claim 9 , wherein
the dielectric substrate is a photonic crystal.
12. The terahertz module according to claim 11 , wherein
a waveguide for the terahertz wave is formed on the photonic crystal in a direction perpendicular to the upper surface of the semiconductor substrate.
13. The terahertz module according to claim 11 , wherein
a filter for passing or filtering out a predetermined frequency component of the terahertz wave is formed on the photonic crystal.
14. The terahertz module according to claim 11 , wherein
a planar lens for collecting the terahertz wave emitted by the active device is formed on the photonic crystal.
15. The terahertz module according to claim 11 , wherein
a plurality of the terahertz chips disposed in a row are coupled to the photonic crystal.
16. The terahertz module according to claim 9 , wherein
the active device is a resonant tunneling diode.