IP Library › Granted Patent US 12,169,288
Granted Patent B2
US 12,169,288 · App. 18/208,566 · Granted Dec 17, 2024

Image sensor including color separating lens array and electronic apparatus including the image sensor

Inventors: Seokho Yun (Seoul, KR); Sookyoung Roh (Yongin-si, KR); Sangyun Lee (Yongin-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G02B3/0006G02B27/1013H04N23/60H04N25/11
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Quick Facts
Patent No.
US 12,169,288
App. No.
18/208,566
Granted
Dec 17, 2024
Kind
B2
Abstract

Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a first pixel configured to sense first wavelength light, and a second pixel configured to sense second wavelength light; and a color separating lens array including a first wavelength light condensing region in which the first wavelength light is condensed onto the first pixel, wherein an area of the first wavelength light condensing region is greater than an area of the first pixel, and a distance between the sensor substrate and the color separating lens array is less than a focal distance of the first wavelength light condensing region with respect to the first wavelength light.

Claims (72)

1. An image sensor comprising:

a sensor substrate including a plurality of first pixels, and a plurality of second pixels;

a color separating lens array provided on the sensor substrate, the color separating lens array including a plurality of first pixel corresponding regions corresponding to the plurality of first pixels and a plurality of second pixel corresponding regions corresponding to the plurality of second pixels; and

a spacer layer between the sensor substrate and the color separating lens array,

wherein each of the plurality of first pixel corresponding regions and each of the plurality of second pixel corresponding regions comprise a plurality of nanoposts configured to change a phase of incident light incident on the color separating lens array such that the color separating lens array condenses first wavelength light in the incident light to the plurality of first pixels and condenses second wavelength light in the incident light to the plurality of second pixels, and

wherein a thickness of the spacer layer is less than a focal distance of the color separating lens array with respect to the first wavelength light.

2. The image sensor of claim 1 ,

wherein the thickness of the spacer layer is about 30% to about 70% of the focal distance of the color separating lens array with respect to the first wavelength light.

3. The image sensor of claim 1 ,

wherein the thickness of the spacer layer is about 40% to about 60% of the focal distance of the color separating lens array with respect to the first wavelength light.

4. The image sensor of claim 1 ,

wherein the focal distance of the color separating lens array is represented by the following equation:

np

2

λ

0

-

λ

0

4

⁢

n

,

where p denotes a pixel pitch of the sensor substrate, n denotes a refractive index of the spacer layer, and λ 0 denotes a reference wavelength of a wavelength band of light separated by the color separating lens array.

5. The image sensor of claim 1 ,

wherein each of the plurality of first pixels comprises a first light sensing cell, a second light sensing cell, a third light sensing cell, and a fourth light sensing cell that are two-dimensionally arranged and configured to independently sense the first wavelength light, and

wherein the plurality of nanoposts are arranged such that the first wavelength light is concentrated on four light concentration portions between the first light sensing cell and the second light sensing cell, between the second light sensing cell and the third light sensing cell, between the third light sensing cell and the fourth light sensing cell, and between the the fourth light sensing cell and the first light sensing cell.

6. The image sensor of claim 1 ,

wherein each of the plurality of second pixels comprises a first light sensing cell, a second light sensing cell, a third light sensing cell, and a fourth light sensing cell that are two-dimensionally arranged and configured to independently sense the second wavelength light, and

wherein the plurality of nanoposts are arranged such that the second wavelength light is concentrated on four light concentration portions at a portion of the first light sensing cell, at a portion of the second light sensing cell, at a portion of the third light sensing cell, and at a portion of the fourth light sensing cell.

7. The image sensor of claim 1 ,

wherein the first wavelength light that has passed through the color separating lens array has a phase profile which decreases away from a center of each of the plurality of first pixel corresponding regions, and

wherein the second wavelength light that has passed through the color separating lens array has a phase profile which decreases away from a center of each of the plurality of second pixel corresponding regions.

8. The image sensor of claim 1 , wherein

the sensor substrate further comprises a plurality of third pixels,

the color separating lens array further comprises a plurality of third pixel corresponding regions corresponding to the plurality of third pixels, and

each of the plurality of third pixel corresponding regions comprises a plurality of nanoposts configured to change a phase of incident light incident on the color separating lens array.

9. The image sensor of claim 8 ,

wherein the plurality of nanoposts in the plurality of first pixel corresponding regions, the plurality of second pixel corresponding regions, and the plurality of third pixel corresponding regions are arranged such that the color separating lens array condenses the first wavelength light in the incident light to the plurality of first pixels, condenses the second wavelength light in the incident light to the plurality of second pixels, and condenses third wavelength light in the incident light to the plurality of third pixels.

10. The image sensor of claim 9 ,

wherein the third wavelength light that has passed through the color separating lens array has a phase profile which decreases away from a center of each of the plurality of third pixel corresponding regions.

11. The image sensor of claim 9 ,

wherein each of the plurality of third pixels comprises a first light sensing cell, a second light sensing cell, a third light sensing cell, and a fourth light sensing cell that are two-dimensionally arranged and configured to independently sense the third wavelength light, and

wherein the plurality of nanoposts in the plurality of first pixel corresponding regions, the plurality of second pixel corresponding regions, and the plurality of third pixel corresponding regions are arranged such that the third wavelength light is concentrated on four light concentration portions at a portion of the first light sensing cell, at a portion of the second light sensing cell, at a portion of the third light sensing cell, and at a portion of the fourth light sensing cell.

12. The image sensor of claim 8 , wherein

the sensor substrate further comprises a plurality of fourth pixels,

the color separating lens array further comprises a plurality of fourth pixel corresponding regions corresponding to the plurality of fourth pixels, and

each of the plurality of fourth pixel corresponding regions comprises a plurality of nanoposts configured to change a phase of incident light incident on the color separating lens array.

13. The image sensor of claim 12 ,

wherein the plurality of nanoposts in the plurality of first pixel corresponding regions, the plurality of second pixel corresponding regions, the plurality of third pixel corresponding regions, and the plurality of fourth pixel corresponding regions are arranged such that the color separating lens array condenses the first wavelength light in the incident light to the plurality of first pixels and the plurality of fourth pixels, condenses the second wavelength light in the incident light to the plurality of second pixels, and condenses third wavelength light in the incident light to the plurality of third pixels.

14. The image sensor of claim 13 ,

wherein the first wavelength light that has passed through the color separating lens array has a phase profile which decreases away from a center of each of the plurality of fourth pixel corresponding regions.

15. The image sensor of claim 13 ,

wherein each of the plurality of fourth pixels comprises a first light sensing cell, a second light sensing cell, a third light sensing cell, and a fourth light sensing cell that are two-dimensionally arranged and configured to independently sense the first wavelength light, and

wherein the plurality of nanoposts in the plurality of first pixel corresponding regions, the plurality of second pixel corresponding regions, the plurality of third pixel corresponding regions, and the plurality of fourth pixel corresponding regions are arranged such that the first wavelength light is concentrated on four light concentration portions between the first light sensing cell and the second light sensing cell, between the second light sensing cell and the third light sensing cell, between the third light sensing cell and the fourth light sensing cell, and between the fourth light sensing cell and the first light sensing cell.

16. The image sensor of claim 1 ,

wherein a difference between phases of the first wavelength light that has passed through a center of the first pixel corresponding region and the first wavelength light that has passed through the second pixel corresponding region is about 0.9π to about 1.1π.

17. The image sensor of claim 1 ,

wherein a pixel pitch of the sensor substrate is about 0.9 μm to about 1.3 μm, and

wherein a distance between the sensor substrate and the color separating lens array is about 110% to about 180% of the pixel pitch of the sensor substrate.

18. The image sensor of claim 1 ,

wherein a pixel pitch of the sensor substrate is about 0.5 μm to about 0.9 μm, and

wherein a distance between the sensor substrate and the color separating lens array is about 70% to about 120% of the pixel pitch of the sensor substrate.

19. An electronic apparatus comprising:

an image sensor configured to convert an optical image into an electrical signal; and

a processor configured to control operations of the image sensor and configured to store and output a signal generated by the image sensor,

wherein the image sensor comprises:

a sensor substrate including a plurality of first pixels, and a plurality of second pixels;

a color separating lens array provided on the sensor substrate, the color separating lens array including a plurality of first pixel corresponding regions corresponding to the plurality of first pixels and a plurality of second pixel corresponding regions corresponding to the plurality of second pixels; and

a spacer layer between the sensor substrate and the color separating lens array,

wherein each of the plurality of first pixel corresponding regions and each of the plurality of second pixel corresponding regions comprise a plurality of nanoposts configured to change a phase of incident light incident on the color separating lens array such that the color separating lens array condenses first wavelength light in the incident light to the plurality of first pixels and condenses second wavelength light in the incident light to the plurality of second pixels, and

wherein a thickness of the spacer layer is less than a focal distance of the color separating lens array with respect to the first wavelength light.

Priority Claims (2)
KR 10-2020-0143876 · Oct 30, 2020 · national
KR 10-2021-0083123 · Jun 25, 2021 · national
Continuity (2)
Continuation 17514807 · Oct 29, 2021
Related Publication 20230324586A1 · Oct 12, 2023