Substrate processing apparatus and method

1. A substrate processing method to create a sacrificial masking layer comprising:

providing a substrate with a radiation modifiable layer to a lithographic projection apparatus for locally modifying the radiation modifiable layer;

locally modifying the radiation modifiable layer of the substrate with exposure radiation of the lithographic projection apparatus to modify a modified layer portion of the radiation modifiable layer where it is exposed to radiation and to leave unmodified an unmodified layer portion of the radiation modifiable layer where it is not exposed to radiation;

moving the substrate from the lithographic projection apparatus to a reaction chamber of a selective deposition device;

performing a selective atomic layer deposition (ALD) cycle, the selective ALD cycle comprising:

providing a first precursor selected to react with a reacting portion and not react with a non-reacting portion in the reaction chamber, the reacting portion including one of the modified and unmodified layer portions, the non-reacting portion including the other one of the modified and unmodified layer portions, wherein the first precursor comprises a material selected from the group consisting of a metal, silicon (Si), and germanium (Ge);

selectively growing at least a portion of the sacrificial masking layer on the reacting portion relative to the non-reacting portion by contacting the reacting portion and the non-reacting portion with the first precursor; and subsequently

purging, by flowing a purge gas through the reaction chamber, an unreacted portion of the first precursor and/or reaction by-products from the reaction chamber to leave the non-reacting portion as an exposed portion of the modified and unmodified layer portions.

2. The substrate processing method according to claim 1 , further comprising contacting the modified and unmodified layer portions with a second precursor, wherein the second precursor comprises NH 3 or H 2 O.

3. The substrate processing method according to claim 1 , wherein the first precursor comprises a material selected from the group consisting of TiCl 4 , TDMAT, TTIP, and HfCl 4 .

4. The substrate processing method according to claim 1 , wherein the radiation modifiable layer has a thickness between 0.1 to 20 nm.

5. The substrate processing method according to claim 1 , wherein the purging is performed by a precursor distribution and removal system and via the purge gas.

6. The substrate processing method according to claim 5 , wherein the selective ALD cycle further comprises selectively growing at least a second portion of the sacrificial masking layer by providing a second precursor to the reaction chamber after the unreacted portion of the first precursor is removed from the reaction chamber.

7. The substrate processing method according to claim 6 , wherein the selective ALD cycle further comprises purging, by flowing the purge gas through the reaction chamber, an unreacted portion of the second precursor and/or reaction by-products from the reaction chamber.

8. A substrate processing method to create a patterned substrate comprising:

creating a sacrificial masking layer according to claim 1 ;

etching the substrate through the sacrificial masking layer; and,

removing the sacrificial masking layer.

9. A substrate processing method to create a patterned substrate comprising:

creating a sacrificial masking layer according to claim 1 ; and

etching the substrate through the exposed portion of the modified and unmodified layer portions, wherein the sacrificial masking layer protects a non-exposed portion of the modified and unmodified layer from the etching.

10. The substrate processing method of claim 9 , wherein recesses are formed in the substrate in response to the etching the substrate through the exposed portion of the modified and unmodified layer portions while the sacrificial masking layer remains.

11. The substrate processing method according to claim 1 , further comprising repeating the selective ALD cycle.

12. A substrate processing method to create a sacrificial masking layer comprising:

providing a substrate with a radiation modifiable layer to a lithographic projection apparatus for locally modifying the radiation modifiable layer;

locally modifying the radiation modifiable layer of the substrate with exposure radiation of the lithographic projection apparatus to modify a modified layer portion of the radiation modifiable layer where it is exposed to radiation and to leave unmodified an unmodified layer portion of the radiation modifiable layer where it is not exposed to radiation, the modified layer portion comprising CH x groups, with x being an integer from 1 to 3, the unmodified layer portion including OH groups;

moving the substrate from the lithographic projection apparatus to a reaction chamber of a selective deposition device;

performing a selective atomic layer deposition (ALD) cycle, wherein the selective ALD cycle comprises:

providing a precursor selected to react more with a reacting portion relative to a less-reacting portion in the reaction chamber, wherein the reacting portion includes one of the modified layer portion and the unmodified layer portion, and the less-reacting portion including the other of the modified layer portion and the unmodified layer portion;

selectively growing the sacrificial masking layer on the reacting portion relative to the less-reacting portion by contacting the reacting portion and the less-reacting portion with the precursor; and

purging, by flowing a purge gas through the reaction chamber, an unreacted portion of the precursor and/or reaction by-products from the reaction chamber.

13. The substrate processing method according to claim 12 , further comprising repeating the selective ALD cycle.