Fabricating active-bridge-coupled GPU chiplets

1. A method of forming active-bridge-coupled GPU chiplets, comprising:

bonding a first GPU chiplet and a second GPU chiplet to a temporary carrier wafer;

bonding a face surface of an active bridge chiplet to a face surface of the first and second GPU chiplets, wherein the active bridge chiplet includes a level of cache memory and wherein the active bridge chiplet is configured to communicatively couple the level of cache memory to the first and second GPU chiplets such that the level of cache memory is cache coherent across the first and second GPU chiplets; and

mounting the first and second GPU chiplets to a carrier substrate.

2. The method of claim 1 , wherein bonding the first GPU chiplet and the second GPU chiplet to the temporary carrier wafer comprises bonding the face surface of the first and second GPU chiplets to the temporary carrier wafer.

3. The method of claim 2 , further comprising:

depositing one or more gap fill dielectric layers on top of the temporary carrier wafer.

4. The method of claim 3 , wherein depositing one or more gap fill dielectric layers on top of the temporary carrier wafer includes forming a planar surface by filling in areas with a vertical discrepancy between a surface of the temporary carrier wafer and a back surface of the first and second GPU chiplets.

5. The method of claim 3 , further comprising:

performing carrier flipping by separating the face surface of the first and second GPU chiplets from the temporary carrier wafer; and

bonding a back surface of the first and second GPU chiplets to a second carrier wafer.

6. The method of claim 5 , further comprising:

etching one or more voids through an additional one or more gap fill dielectric layers; and

filling the one or more voids with a conductive material to form a set of conductive pillars that communicably couple to at least one of the first and second GPU chiplets.

7. The method of claim 6 , wherein the set of conductive pillars comprise through dielectric vias.

8. The method of claim 6 , further comprising:

fabricating a redistribution layer structure at a back surface of the active bridge chiplet.

9. The method of claim 8 , wherein fabricating the redistribution layer structure further comprises positioning a conductor structure on top of each of the set of conductive pillars.

10. The method of claim 1 , further comprising:

thinning, subsequent to bonding the face surface of the active bridge chiplet to the face surface of the first and second GPU chiplets, the active bridge chiplet to expose a set of through silicon vias (TSVs) extending from the face surface of the active bridge chiplet to a back surface opposite the face surface of the active bridge chiplet.

11. A method of forming an active-bridge-coupled GPU chiplet unit, comprising:

bonding a first GPU chiplet and a second GPU chiplet to a temporary carrier wafer;

bonding a face surface of an active bridge chiplet to a back surface of the first and second GPU chiplets, wherein the active bridge chiplet includes a level of cache memory and wherein the active bridge chiplet is configured to communicatively couple the level of cache memory to the first and second GPU chiplets such that the level of cache memory is cache coherent across the first and second GPU chiplets; and

mounting the active-bridge-coupled GPU chiplet unit including the first and second GPU chiplets to a carrier substrate.

12. The method of claim 11 , further comprising:

thinning the first and second GPU chiplets to expose a set of through silicon vias (TSVs) extending from a face surface to the back surface opposite the face surface of the first and second GPU chiplets.

13. The method of claim 11 , wherein bonding the first GPU chiplet and the second GPU chiplet to the temporary carrier wafer comprises bonding a face surface of the first and second GPU chiplets to the temporary carrier wafer.

14. The method of claim 13 , further comprising:

depositing one or more gap fill dielectric layers on top of the temporary carrier wafer to form a planar surface by filling in areas with a vertical discrepancy between a surface of the temporary carrier wafer and a back surface of the first and second GPU chiplets.

15. The method of claim 14 , further comprising:

performing carrier flipping by separating the face surface of the first and second GPU chiplets from the temporary carrier wafer; and

bonding a back surface of the active bridge chiplet to a second carrier wafer.

16. The method of claim 15 , further comprising:

attaching one or more layers of dummy silicon between the second carrier wafer and a back surface of first and second GPU chiplets.

17. The method of claim 11 , further comprising:

coupling one or more conductor structures to a face surface of the first and second GPU chiplets.

18. A processor formed by a method of forming active-bridge-coupled GPU chiplets, the method comprising:

bonding a first GPU chiplet and a second GPU chiplet to a temporary carrier wafer;

bonding a face surface of an active bridge chiplet to a face surface of the first and second GPU chiplets, wherein the active bridge chiplet includes a level of cache memory and wherein the active bridge chiplet is configured to communicatively couple the level of cache memory to the first and second GPU chiplets such that the level of cache memory is cache coherent across the first and second GPU chiplets; and

mounting the first and second GPU chiplets to a carrier substrate.

19. The processor of claim 18 , wherein bonding the first GPU chiplet and the second GPU chiplet to the temporary carrier wafer comprises bonding the face surface of the first and second GPU chiplets to the temporary carrier wafer.