Light emitting element and display device including the same
A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.
1. A light emitting element, comprising:
a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;
a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and
an insulation layer surrounding an outer surface of the passivation layer,
wherein the passivation layer comprises a two-dimensional (2D) material, and
wherein the 2D material comprises at least one selected from CaF 2 , Ti 0.9 O 2 , Mica, WS 2 , MoS 2 , Ni(OH) 2 , Cu(OH) 2 , Mg(OH) 2 , GaS, and Talc, and
wherein the passivation layer comprises a plurality of passivation layers spaced apart from each other in a length direction of the light emitting element on the outer surface of the at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer.
2. The light emitting element of claim 1 , wherein:
a band gap of the 2D material is 3.5 eV or more.
3. The light emitting element of claim 1 , wherein:
the passivation layer is partially on an outer surface of the first semiconductor layer, the second semiconductor layer, and/or the active layer, and
an outer surface of the first semiconductor layer, the second semiconductor layer, and/or the active layer exposed by the passivation layer is in contact with the insulation layer.
4. The light emitting element of claim 1 , wherein:
the passivation layer is entirely on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.
5. The light emitting element of claim 1 , wherein:
the passivation layer is directly on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.
6. The light emitting element of claim 1 , wherein:
the insulation layer comprises an inorganic material.
7. The light emitting element of claim 6 , wherein:
the inorganic material comprises at least one selected from SiOx, SiNx, SiOxNy, AlOx, AlNx, ZrOx, HfOx, and TiOx.
8. The light emitting element of claim 1 , wherein:
the insulation layer comprises the same material as the first semiconductor layer, the second semiconductor layer, and/or the active layer.
9. The light emitting element of claim 1 , wherein:
the insulation layer is directly on the passivation layer.
10. A display device comprising:
a plurality of pixels, each of the plurality of pixels comprising:
a first electrode and a second electrode spaced apart from each other, and
light emitting elements between the first electrode and the second electrode,
wherein each of the light emitting elements comprises a semiconductor core,
a passivation layer surrounding an outer surface of the semiconductor core, and
an insulation layer surrounding an outer surface of the passivation layer,
wherein the passivation layer comprises a two-dimensional (2D) material, and
wherein the 2D material comprises at least one selected from CaF 2 , Ti 0.9 O 2 , Mica, WS 2 , MoS 2 , Ni(OH) 2 , Cu(OH) 2 , Mg(OH) 2 , GaS, and Talc, and
wherein the passivation layer comprises a plurality of passivation layers spaced apart from each other in a length direction of the light emitting element on the outer surface of the at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer.
11. The display device of claim 10 , wherein:
the passivation layer is partially on the outer surface of the semiconductor core, and
the semiconductor core exposed by the passivation layer is in contact with the insulation layer.
12. The display device of claim 10 , wherein:
the passivation layer is entirely on the outer surface of the semiconductor core.
13. The display device of claim 10 , wherein:
a band gap of the 2D material is 3.5 eV or more.
14. The display device of claim 10 , wherein:
the semiconductor core comprises the first semiconductor layer, the second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.
15. The display device of claim 14 , wherein:
the passivation layer is directly on outer surfaces of the first semiconductor layer, the second semiconductor layer, and/or the active layer.
16. The display device of claim 10 , wherein:
the insulation layer comprises an inorganic material.
17. The display device of claim 10 , wherein:
the insulation layer comprises the same material as the semiconductor core.
18. The display device of claim 10 , wherein:
the insulation layer is directly on the passivation layer.