Iterative decoder for correcting dram device failures
Provided is a memory system comprising an error correction code (ECC) decoder configured to receive data from a memory. The ECC decoder includes a syndrome generator configured to calculate at least one of syndrome vector and an erasure value, the calculation being devoid of erasure location information and an error-location polynomial generator configured to determine error location and error/erasure value polynomials responsive to syndrome and erasure calculation values output from the syndrome generator. An error value generator confirms error values at one or more known error locations based upon the determined error/erasure value polynomials, and an error location generator search for an error evaluation value to confirm the known error locations based upon the determined error location polynomials. Outputs of the error value generator and the error location generator are combined to produce corrected data.
1. A memory system comprising:
an error correction code (ECC) decoder configured to receive data from a memory and comprising:
a syndrome generator configured to calculate at least one of syndrome vector and an erasure value;
an error-location polynomial generator configured to determine error location polynomials and error/erasure value polynomials responsive to syndrome and erasure calculation values output from the syndrome generator;
an error value generator configured to confirm error values at one or more known error locations based upon the determined error/erasure value polynomials; and
an error location generator configured to conduct a search of error location combinations to find an error evaluation value to confirm error locations of specific errors based upon the error location polynomials;
wherein outputs of the error value generator and the error location generator are combined to produce corrected data, and
wherein the ECC decoder facilitates an iterative decoding operation by performing a single decoding attempt of a portion of a word received from a memory component of the memory and when failing to correct detected errors, iteratively performing decoding attempts on remaining portions of the word corresponds to remaining memory components, as erasures, and using counter logic to obtain erasure location information corresponding to the erasures.
2. The memory system of claim 1 , wherein the ECC decoder is formed within a memory controller, the memory controller being coupled, at least indirectly, to the memory.
3. The memory system of claim 2 , wherein the ECC decoder is based upon Reed Solomon (RS) codes.
4. The memory system of claim 3 , wherein the memory includes dynamic random access memory (DRAM) devices.
5. The memory system of claim 4 , wherein the memory is constructed in accordance compute express link (CXL) principles.
6. The memory system of claim 1 , wherein the syndrome generator is configured to receive data from the memory as an input.
7. The memory system of claim 1 , wherein the syndrome generator outputs syndrome values to the error-location polynomial generator.
8. The memory system of claim 7 , wherein the error-location polynomial generator is based upon one from the group including the Berlekamp algorithm and the Euclid algorithm.
9. The memory system of claim 8 , wherein the error value generator operate in accordance with the Forney algorithm.
10. The memory system of claim 9 , wherein the search is performed in accordance with the Chien search algorithm.