Bulk acoustic wave resonator and fabrication method thereof
A bulk acoustic wave (BAW) resonator includes a substrate, a piezoelectric layer disposed above the substrate, a first electrode disposed below the piezoelectric layer, a second electrode disposed above the piezoelectric layer, a first dielectric layer, a second dielectric layer, and a third dielectric layer disposed between the substrate and the piezoelectric layer, and a bonding layer disposed between the third dielectric layer and the substrate. The first dielectric layer is disposed below the piezoelectric layer and includes a cavity. The third dielectric layer is disposed below the first dielectric layer and includes a protruding structure protruding towards the piezoelectric layer. The second dielectric layer overlays the third dielectric layer including the protruding structure, the second dielectric layer and the protruding structure of the third dielectric layer constituting a double-wall boundary structure surrounding the cavity.
1. A bulk acoustic wave (BAW) resonator, comprising:
a substrate;
a piezoelectric layer disposed above the substrate;
a first electrode disposed below the piezoelectric layer;
a second electrode disposed above the piezoelectric layer;
a dielectric layer disposed between the substrate and the piezoelectric layer, the dielectric layer including a cavity; and
a bonding layer disposed between the dielectric layer and the substrate, the bonding layer being formed of amorphous silicon,
wherein the dielectric layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer.
2. The BAW resonator of claim 1 , wherein the piezoelectric layer is formed of AIN or ScAIN.
3. The BAW resonator of claim 1 , wherein the first dielectric layer is disposed below the piezoelectric layer and includes the cavity,
the third dielectric layer is disposed below the first dielectric layer and includes a protruding structure protruding towards the piezoelectric layer, and
the second dielectric layer overlays the third dielectric layer including the protruding structure.
4. The BAW resonator of claim 3 , wherein the second dielectric layer and the protruding structure of the third dielectric layer together constitute a double-wall boundary structure surrounding the cavity.
5. The BAW resonator of claim 1 , wherein the second dielectric layer contacts a portion of the piezoelectric layer and a portion of the first electrode.
6. The BAW resonator of claim 1 , wherein the first dielectric layer is formed of silicon oxide.
7. The BAW resonator of claim 1 , wherein the second dielectric layer is formed of polysilicon, amorphous silicon, silicon nitride, aluminum nitride, gallium nitride, tantalum nitride, or a stacked combination of two or more of those materials.
8. The BAW resonator of claim 1 , wherein the third dielectric layer is formed of silicon oxide, silicon nitride, aluminum nitride, or a stacked combination of two or more of those materials.
9. The BAW resonator of claim 1 , wherein the bonding layer has a thickness ranging from approximately 3 nm to approximately 50 nm.
10. The BAW resonator of claim 1 , wherein the substrate is formed of silicon.
11. The BAW resonator of claim 1 , wherein the substrate comprises:
a surface layer facing the bonding layer and formed of silicon; and
a body formed of silicon oxide, sapphire (Al 2 O 3 ), gallium nitride, silicon carbide, aluminum nitride, silicon nitride, or a stacked combination of two or more of those materials.
12. The BAW resonator of claim 1 , further comprising:
one or more release holes formed in the piezoelectric layer, and exposing the cavity.
13. The BAW resonator of claim 1 , further comprising:
a contact hole in the piezoelectric layer, and exposing a portion of the first electrode; and
a pad metal layer disposed on the piezoelectric layer and in the contact hole, and electrically connected to the first electrode via the contact hole.