Detection device

1. A detection device comprising:

a photodiode; and

a thin-film transistor coupled to the photodiode,

wherein the thin-film transistor comprises:

a semiconductor layer between a light-blocking layer and the photodiode; and

an electrode layer between the semiconductor layer and the photodiode, the electrode layer includes a source electrode and a drain electrode of the thin-film transistor,

wherein the source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween,

wherein the source electrode covers an area where the semiconductor layer and a gate electrode overlap with each other in a plan view and a channel region of the semiconductor layer formed by the overlapping, the gate electrode being formed between the source electrode and the semiconductor layer,

wherein the light-blocking layer extends closer to the drain electrode than an end of the source electrode on a drain electrode side extends, and

wherein the thin-film transistor comprises two of the gate electrodes.

2. The detection device according to claim 1 ,

wherein the photodiode comprises:

an organic material having a photovoltaic effect;

a cathode electrode provided on a thin-film transistor side of the organic material; and

an anode electrode provided on an opposite side of the organic material from the cathode electrode, and

wherein a layer of the organic material and a layer of the anode electrode are continuous along a detection surface over the respective cathode electrodes of a plurality of the photodiodes arranged along the detection surface.