High bandwidth architecture for centralized coherent control at the edge of processing tool
Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.
1. A processing tool, comprising:
a power supply;
an impedance matching network coupled to the power supply;
a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode;
a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network;
a first sensor upstream of the impedance matching network; and
a second sensor downstream of the impedance matching network, the second sensor between the impedance matching network and the cathode.
2. The processing tool of claim 1 , wherein the first sensor and the second sensor are communicatively coupled to the processing module.
3. The processing tool of claim 1 , wherein the first sensor and the second sensor are voltage/current sensors.
4. The processing tool of claim 1 , further comprising:
a plurality of power sources, wherein the plurality of power sources are coupled to the impedance matching network.
5. The processing tool of claim 4 , further comprising:
a plurality of first sensors, wherein individual ones of the plurality of first sensors are between individual ones of the plurality of power sources and the impedance matching network; and
a second sensor between the impedance matching network and the cathode.
6. The processing tool of claim 1 , wherein the cathode is in a plasma chamber.
7. The processing tool of claim 1 , wherein the power supply is an RF power supply.
8. The processing tool of claim 1 , wherein the power supply is a microwave power supply.
9. The processing tool of claim 1 , wherein the power supply is a DC power supply.
10. The processing tool of claim 1 , wherein the impedance matching network changes the impedance of the electrical path between the power supply and the cathode in order to match an impedance of a load coupled to the cathode.
11. The processing tool of claim 1 , wherein the cathode is a top electrode in a plasma chamber.
12. The processing tool of claim 1 , wherein the cathode is a bottom electrode in a plasma chamber.
13. A process power control module, comprising:
an RF platform board;
a carrier card for an analog to digital converter (ADC), the carrier card coupled to the RF platform board;
a heterogeneous computing module (HCM), the HCM coupled to the RF platform board;
a programmable logic board, the programmable logic board coupled to the RF platform board;
a real time processing unit (RTPU), the RTPU coupled to the RF platform board; and
a messaging controller, the messaging controller coupled to the RF platform board.
14. The process power control module of claim 13 , wherein the RTPU comprises an impedance match/frequency control module.
15. The process power control module of claim 13 , wherein the RTPU comprises a current ratio control module.
16. The process power control module of claim 13 , wherein the RTPU comprises an RF source control module.
17. The process power control module of claim 13 , wherein the RTPU comprises one or more of an impedance match/frequency agent, a pulse monitor agent, an impedance match calibration agent, and a sensor calibration agent.
18. A semiconductor processing tool, comprising:
a power supply;
an impedance matching network coupled to the power supply;
a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode; and
a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network, and wherein the processing module comprises:
an RF platform board;
a carrier card for an analog to digital converter (ADC), the carrier card coupled to the RF platform board;
a heterogeneous computing module (HCM), the HCM coupled to the RF platform board;
a programmable logic board, the programmable logic board coupled to the RF platform board;
a real time processing unit (RTPU), the RTPU coupled to the RF platform board; and
a messaging controller, the messaging controller coupled to the RF platform board; and
a first sensor upstream of the impedance matching network; and
a second sensor downstream of the impedance matching network, the second sensor between the impedance matching network and the cathode.