IP Library › Granted Patent US 12,183,987
Granted Patent B2
US 12,183,987 · App. 18/024,022 · Granted Dec 31, 2024

Phase shifter, method for manufacturing same, and electronic device

Inventors: Zhao Cui (Beijing, CN); Zhonglan Zhao (Beijing, CN); Feng Zhang (Beijing, CN); Liwen Dong (Beijing, CN); Dongfei Hou (Beijing, CN); Yuqiao Li (Beijing, CN); Wenqu Liu (Beijing, CN); Zhijun Lv (Beijing, CN); Detian Meng (Beijing, CN); Liuqing Li (Beijing, CN); Yong Ma (Beijing, CN); Mengya Song (Beijing, CN); Feng Qu (Beijing, CN)
Assignee: BOE Technology Group Co., Ltd.
H01Q3/36H01Q1/02
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Quick Facts
Patent No.
US 12,183,987
App. No.
18/024,022
Granted
Dec 31, 2024
Kind
B2
Abstract

Provided are a phase shifter, a method for manufacturing the same, and an electronic device. The phase shifter includes: a first substrate and a second substrate that are oppositely arranged, and heat conduction structures arranged between the first substrate and the second substrate. Orthographic projections of the heat conduction structures and orthographic projections of phase shifting units on the same substrate do not overlap each other.

Claims (40)

1. A phase shifter, comprising:

a first substrate and a second substrate that are oppositely arranged;

a plurality of phase shifting units arranged in an array between the first substrate and the second substrate; and

one or more heat conduction structures arranged between the first substrate and the second substrate;

wherein orthographic projections of the one or more heat conduction structures and orthographic projections of the plurality of phase shifting units on a same substrate do not overlap each other.

2. The phase shifter according to claim 1 , wherein the one or more the heat conduction structures are arranged between every two adjacent phase shifting units of at least part of the plurality of phase shifting units.

3. The phase shifter according to claim 1 , wherein the one or more heat conduction structures are arranged on a side, close to the second substrate, of the first substrate; and/or,

the one or more heat conduction structures are arranged on a side, close to the first substrate, of the second substrate.

4. The phase shifter according to claim 3 , wherein the heat conduction structures comprise first electrodes, a thermoelectric layer and second electrodes that are sequentially stacked on a corresponding substrate; and

orthographic projections of the first electrodes of the heat conduction structures on the corresponding substrate completely fall within orthographic projections of corresponding second electrodes on the corresponding substrate.

5. The phase shifter according to claim 4 , wherein the plurality of phase shifting units comprise:

a plurality of microstrip line electrodes located on the side, close to the second substrate, of the first substrate; and

a plurality of ground electrodes located on the side, close to the first substrate, of the second substrate and corresponding to the plurality of microstrip line electrodes;

wherein orthographic projections of the plurality of microstrip line electrodes of the plurality of phase shifting units on the first substrate do not overlap each other; and

orthographic projections of the plurality of ground electrodes of the plurality of phase shifting units on the second substrate do not overlap each other.

6. The phase shifter according to claim 5 , wherein the second electrodes and the plurality of microstrip line electrodes that are located on the first substrate are manufactured on a same layer and insulated from each other.

7. The phase shifter according to claim 5 , wherein the second electrodes and the plurality of ground electrodes that are located on the second substrate are manufactured on a same layer and insulated from each other.

8. The phase shifter according to claim 4 , wherein the first electrodes located on a same substrate are connected in series via a wire and are grounded.

9. The phase shifter according to claim 8 , wherein the thermoelectric layer corresponding to the heat conduction structures located on a same substrate is an entire layer structure.

10. The phase shifter according to claim 5 , wherein the plurality of phase shifting units further comprise dielectric layers located between the plurality of microstrip line electrodes and the plurality of ground electrodes; and

orthographic projections of the dielectric layers of the plurality of phase shifting units on the second substrate do not overlap each other.

11. The phase shifter according to claim 10 , wherein at least one supporting post is arranged between every two adjacent phase shifting units of at least part of the plurality of phase shifting units.

12. An electronic device, comprising: the phase shifter of claim 1 .

13. A method for manufacturing the phase shifter of claim 1 , comprising:

forming the one or more heat conduction structures between the first substrate and the second substrate while the plurality of phase shifting units arranged in an array are formed.

14. The method according to claim 13 , wherein the forming the one or more heat conduction structures between the first substrate and the second substrate comprises:

forming the one or more heat conduction structures between every two adjacent phase shifting units of at least part of the plurality of phase shifting units.

15. The method according to claim 14 , wherein the forming the one or more heat conduction structure between every two adjacent phase shifting units of at least part of the plurality of phase shifting units comprises:

forming the one or more heat conduction structures between every two adjacent phase shifting units of at least part of the plurality of phase shifting units on a side, close to the second substrate, of the first substrate; and/or

forming the one or more heat conduction structures between every two adjacent phase shifting units of at least part of the plurality of phase shifting units on a side, close to the first substrate, of the second substrate.

16. The method according to claim 15 , wherein the forming the one or more heat conduction structures between every two adjacent phase shifting units of at least part of the plurality of phase shifting units on the side, close to the second substrate, of the first substrate comprises:

forming a pattern of a first electrode on the side, close to the second substrate, of the first substrate through a patterning process;

forming a thermoelectric layer on a side, facing away from the first substrate, of the first electrode;

forming a pattern of a second electrode on a side, facing away from the first electrode, of the thermoelectric layer; and

forming the one or more heat conduction structures comprising the first electrode, the thermoelectric layer and the second electrode.

17. The method according to claim 14 , wherein the forming the one or more heat conduction structures between every two adjacent phase shifting units of at least part of the plurality of phase shifting units on the side, close to the first substrate, of the second substrate comprises:

forming a pattern of a first electrode on the side, close to the first substrate, of the second substrate through a patterning process;

forming a thermoelectric layer on a side, facing away from the second substrate, of the first electrode;

forming a pattern of a second electrode on a side, facing away from the first electrode, of the thermoelectric layer; and

forming the one or more heat conduction structures comprising the first electrode, the thermoelectric layer and the second electrode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2023
From: CUI, ZHAO; ZHAO, ZHONGLAN; ZHANG, FENG; DONG, LIWEN; HOU, DONGFEI; LI, YUQIAO; LIU, WENQU; LV, ZHIJUN; MENG, DETIAN; LI, LIUQING; MA, YONG; SONG, MENGYA; QU, FENG
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 062889/0655 →
Continuity (1)
Related Publication 20240283150A1 · Aug 22, 2024
Cited By (1)
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