Fingerprint identification module, method for manufacturing fingerprint identification module, display substrate and display device
A fingerprint identification module, a method for manufacturing the fingerprint identification module, a display substrate and a display device are provided. The fingerprint identification module includes a TFT, a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor; the TFT includes an active layer; the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern includes a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode.
1. A fingerprint identification module, comprising:
a thin film transistor (TFT), a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor,
wherein the TFT comprises an active layer;
the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern comprises a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode;
wherein the TFT comprises a gate electrode, and the gate electrode is arranged at a same layer, and made of a same material, as the first electrode of the photosensitive sensor.
2. The fingerprint identification module according to claim 1 , wherein the photosensitive sensor comprises a first electrode, a PIN layer and a second electrode, wherein the first electrode, the PIN layer and the second electrode are laminated one on another on a substrate sequentially in that order, and the connection electrode is lapped onto the second electrode.
3. The fingerprint identification module according to claim 2 , further comprising:
a gate insulation layer, wherein a portion of the gate insulation layer covers a surface of the second electrode distal to the first electrode; and
a via-hole, wherein the via-hole is formed in the portion of the gate insulation layer and penetrates through the gate insulation layer,
wherein the connection electrode is in contact with the second electrode through the via-hole.
4. The fingerprint identification module according to claim 2 , wherein the connection electrode is a transparent electrode.
5. The fingerprint identification module according to claim 1 , wherein the photosensitive sensor comprises a first electrode and a PIN layer laminated one on another on a substrate sequentially in that order, and the connection electrode is a transparent electrode and reused as a second electrode of the photosensitive sensor.
6. The fingerprint identification module according to claim 5 , wherein a portion of the connection electrode is arranged at a surface of the PIN layer distal to the first electrode.
7. The fingerprint identification module according to claim 1 , wherein
the connection electrode is connected to the active layer and reused as a drain electrode of the TFT; or
the connection electrode is connected to the active layer and the drain electrode of the TFT; or
the connection electrode is separated from the active layer and connected to the drain electrode of the TFT.
8. A method for manufacturing a fingerprint identification module, configured to manufacture the fingerprint identification module according to claim 1 , wherein the method comprises:
forming the semiconductor layer pattern through a single patterning process; and
subjecting the second semiconductor pattern to conductor-formation treatment to form the connection electrode;
the method further comprises, prior to forming the semiconductor layer pattern,
forming a gate metal layer pattern, wherein the gate metal layer pattern comprises a gate electrode of the TFT and the first electrode of the photosensitive sensor.
9. The method according to claim 8 , further comprising: prior to forming the semiconductor layer pattern,
forming a first electrode, a PIN layer and a second electrode of the photosensitive sensor on a substrate sequentially in that order, wherein the connection electrode is lapped onto the second electrode.
10. The method according to claim 9 , further comprising: subsequent to forming the first electrode, the PIN layer and the second electrode of the photosensitive sensor sequentially on the substrate sequentially in that order,
forming a gate insulation layer, wherein a portion of the gate insulation layer covers a surface of the second electrode distal to the first electrode;
forming in the portion of the gate insulation layer a via-hole that penetrates through the gate insulation layer,
wherein the connection electrode is in contact with the second electrode through the via-hole.
11. The method according to claim 9 , wherein the connection electrode is a transparent electrode.
12. The method according to claim 8 , further comprising: subsequent to forming the semiconductor layer pattern,
forming a source/drain metal layer pattern, the source/drain metal layer pattern merely comprising a source electrode, the connection electrode being connected to the active layer and reused as a drain electrode of the TFT; or
forming the source/drain metal layer pattern, the source/drain metal layer pattern comprising the source electrode and the drain electrode, the connection electrode being connected to the active layer and the drain electrode; or
forming the source/drain metal layer pattern, the source/drain metal layer pattern comprising the source electrode and the drain electrode, the connection electrode being separated from the active layer and connected to the drain electrode.
13. A display substrate, comprising a fingerprint identification module, wherein the fingerprint identification module comprises:
a thin film transistor (TFT), a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor,
wherein the TFT comprises an active layer;
the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern comprises a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode;
wherein the TFT comprises a gate electrode, and the gate electrode is arranged at a same layer, and made of a same material, as the first electrode of the photosensitive sensor.
14. A display device, comprising the display substrate according to claim 13 .