Composite integrated film, composite integrated film supply wafer, and semiconductor composite device
A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.
1. A composite integrated film comprising:
a base member thin film having a base member first surface and a base member second surface facing each other, the base member thin film having a thickness less than or equal to 20 [μm] and being formed of an insulating material;
one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film;
one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, the one or more electrodes being each provided to step over to the base member first surface's side;
one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes; and
one or more wiring members provided on the base member first surface of the base member thin film, and directly connecting the one or more electrodes and the one or more elements, respectively,
wherein the electrode surface and the base member second surface form a same flat surface.
2. The composite integrated film according to claim 1 , wherein surface roughness of the base member second surface and the electrode surface is less than or equal to 10 [nm].
3. The composite integrated film according to claim 1 , wherein
the base member thin film is of a rectangular shape having a first side length and a second side length longer than the first side length, and
a film level difference as a distance between the base member second surface and the electrode surface in regard to a normal direction of the base member second surface is less than or equal to 1/1000 of the first side length.
4. The composite integrated film according to claim 1 , wherein the penetration part is a through hole that penetrates the base member first surface and the base member second surface inside the base member thin film or a notch part as a void extending inward from an outer periphery of the base member thin film.
5. The composite integrated film according to claim 1 , wherein the one or more elements include a plurality of light-emitting elements each formed with two or more types of materials different from each other.
6. A composite integrated film supply wafer comprising:
a wafer; and
a plurality of the composite integrated films according to claim 1 ,
wherein at least either of the base member second surface or the electrode surface on each of the plurality of composite integrated films and a front surface of the wafer are in contact with each other.
7. The composite integrated film supply wafer according to claim 6 , wherein surface roughness of the front surface of the wafer is less than or equal to 10 [nm].
8. A semiconductor composite device comprising:
a circuit board; and
a plurality of the composite integrated films according to claim 1 , wherein
the circuit board includes:
a drive circuit that selectively drives a plurality of the elements;
a plurality of first direction wires;
a plurality of second direction wires; and
a plurality of connection pads each being electrically connected to the first direction wire or the second direction wire,
the electrode surfaces of the composite integrated films are joined to the connection pads of the circuit board by intermolecular forces, and
at least a part of the base member second surface of the composite integrated film is joined to a front surface of the circuit board by intermolecular forces.
9. A semiconductor composite device comprising:
a circuit board; and
a plurality of the composite integrated films according to claim 1 , wherein
the circuit board includes:
a drive circuit that selectively drives a plurality of the elements;
a plurality of first direction wires;
a plurality of second direction wires; and
a plurality of connection pads each being electrically connected to the first direction wire or the second direction wire,
the electrode surfaces of the composite integrated films are joined to the connection pads of the circuit board by eutectic joining, and
at least a part of the base member second surface of the composite integrated film is joined to a front surface of the circuit board by intermolecular forces.
10. The semiconductor composite device according to claim 8 , wherein surface roughness of a front surface of the connection pad of the circuit board is less than or equal to 10 [nm].
11. The semiconductor composite device according to claim 8 , wherein at least a part of the base member second surface of the composite integrated film is joined to a part of the circuit board other than the connection pads by intermolecular forces.
12. A semiconductor composite device,
a circuit board; and
a plurality of composite integrated films,
wherein each of the plurality of composite integrated films includes:
a base member thin film having a base member first surface and a base member second surface facing each other;
one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film;
one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side; and
one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes,
wherein the electrode surface and the base member second surface form a same flat surface;
wherein the circuit board includes:
a drive circuit that selectively drives a plurality of the elements,
a plurality of first direction wires,
a plurality of second direction wires, and
a plurality of connection pads each being electrically connected to the first direction wire or the second direction wire;
wherein the electrode surfaces of the composite integrated films are joined to the connection pads of the circuit board by intermolecular forces;
wherein at least a part of the base member second surface of the composite integrated film is joined to a front surface of the circuit board by intermolecular forces; and
wherein the circuit board includes sub-connection pads that are joined to the base member second surfaces by intermolecular forces without being joined to the electrode surfaces of the composite integrated films.
13. The semiconductor composite device according to claim 8 , wherein
the circuit board has an insulation layer that covers the front surface other than the connection pads,
a front surface of the insulation layer and front surfaces of the connection pads form a same flat surface, and
at least a part of the base member second surface of the composite integrated film is joined to the front surface of the insulation layer by intermolecular forces.
14. The semiconductor composite device according to claim 13 , wherein a substrate level difference as a distance between the front surface of the insulation layer and the front surface of the connection pad in regard to a normal direction of the front surface of the insulation layer is less than or equal to 1/1000 of a shortest side in an external form of the base member thin film in the composite integrated film.
15. The composite integrated film according to claim 1 , wherein the one or more electrodes each close and cover the penetration part and a vicinity of the penetration part from the base member first surface's side.
16. A method of manufacturing a semiconductor composite device, the method comprising:
picking up a composite integrated film from a formation substrate having a flat formation surface, wherein the composite integrated film is formed on the formation substrate in advance, and includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes; and
sticking the composite integrated film on a flat board surface of a circuit board so that the base member second surface of the base member thin film is bonded to the board surface of the circuit board.
17. The method of manufacturing a semiconductor composite device according to claim 16 , wherein surface roughness of the formation surface, the base member second surface, the electrode surface and the board surface is less than or equal to 10 [nm].
18. The method of manufacturing a semiconductor composite device according to claim 16 , wherein the one or more electrodes are provided so as to step over to the base member first surface.
19. The method of manufacturing a semiconductor composite device according to claim 18 , wherein the one or more electrodes each close and cover the penetration part and a vicinity of the penetration part from the base member first surface's side.