Methods for silicon carbide gate formation

1. A method of forming a gate structure on a substrate, comprising:

depositing an amorphous carbon layer on a silicon carbide layer of the gate structure on the substrate to form a capping layer on the silicon carbide layer;

annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius;

forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer;

etching a trench structure of the gate structure into the silicon carbide layer using the hard mask;

removing the hard mask to expose the silicon carbide layer;

depositing a silicon dioxide layer of the gate structure on the silicon carbide layer using an atomic layer deposition process;

performing at least one interface treatment on the silicon dioxide layer;

depositing a gate oxide layer of the gate structure on the silicon dioxide layer; and

depositing a gate material of the gate structure on the gate oxide layer.

2. The method of claim 1 , further comprising:

annealing the silicon carbide layer at a temperature of greater than approximately 2000 degrees Celsius.

3. The method of claim 1 , further comprising:

etching the trench structure into the silicon carbide layer using a selective etch process with a higher etch rate of silicon carbide than amorphous carbon.

4. The method of claim 1 , further comprising:

annealing the silicon carbide layer after depositing the amorphous carbon layer to diffuse dopants into the silicon carbide layer.

5. The method of claim 1 , further comprising:

annealing the silicon carbide layer after depositing the amorphous carbon layer to remove defects in the silicon carbide layer.

6. The method of claim 1 , further comprising:

patterning the amorphous carbon layer by spin coating a photoresist layer on the amorphous carbon layer, exposing the photoresist layer to a light source, and removing areas of the amorphous carbon layer where at least one trench structure is to be formed.

7. The method of claim 1 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process at a temperature of approximately 100 degrees Celsius to approximately 600 degrees Celsius.

8. The method of claim 1 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process to a thickness of approximately 1 nm to approximately 100 nm.

9. The method of claim 1 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process with a gas precursor gas of SiCl 4 , NH 3 and H 2 O, bis(t-butylamino) silane (BTBAS), bis(diethylamino) silane (BDEAS), trisilylamine (TSA), or diisopropylamino silane (DIPAS).

10. The method of claim 1 , further comprising:

performing at least one interface treatment on the silicon dioxide layer including high temperature, oxygen/nitrogen radical treatment, or an additional oxide deposition.

11. A method of forming a gate structure on a substrate, comprising:

depositing an amorphous carbon layer on a silicon carbide layer of the gate structure on the substrate to form a capping layer on the silicon carbide layer;

annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius;

forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer with a photoresist layer;

selectively etching a trench structure of the gate structure into the silicon carbide layer using the hard mask with an etch process having a higher etch rate of silicon carbide over amorphous carbon;

removing the hard mask to expose the silicon carbide layer;

depositing a silicon dioxide layer of the gate structure on the silicon carbide layer using an atomic layer deposition process at a process temperature of approximately 100 degrees Celsius to approximately 600 degrees Celsius;

performing at least one interface treatment on the silicon dioxide layer including high temperature, oxygen/nitrogen radical treatment, or an additional oxide deposition;

depositing a gate oxide layer of the gate structure on the silicon dioxide layer; and

depositing a gate material of the gate structure on the gate oxide layer.

12. The method of claim 11 , further comprising:

annealing the silicon carbide layer at a temperature of greater than approximately 2000 degrees Celsius.

13. The method of claim 11 , further comprising:

annealing the silicon carbide layer after depositing the amorphous carbon layer to diffuse dopants into the silicon carbide layer.

14. The method of claim 11 , further comprising:

annealing the silicon carbide layer after depositing the amorphous carbon layer to remove defects in the silicon carbide layer.

15. The method of claim 11 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process to a thickness of approximately 1 nm to approximately 100 nm.

16. The method of claim 11 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process with a gas precursor gas of SiCl 4 , NH 3 and H 2 O, bis(t-butylamino) silane (BTBAS), bis(diethylamino) silane (BDEAS), trisilylamine (TSA), or diisopropylamino silane (DIPAS).

17. A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a gate structure on a substrate to be performed, the method comprising:

depositing an amorphous carbon layer on a silicon carbide layer of the gate structure on the substrate to form a capping layer on the silicon carbide layer;

annealing the silicon carbide layer at a temperature of greater than approximately 1800 degrees Celsius;

forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer;

etching a trench structure of the gate structure into the silicon carbide layer using the hard mask;

removing the hard mask to expose the silicon carbide layer;

depositing a silicon dioxide layer of the gate structure on the silicon carbide layer using an atomic layer deposition process;

performing at least one interface treatment on the silicon dioxide layer;

depositing a gate oxide layer of the gate structure on the silicon dioxide layer; and

depositing a gate material of the gate structure on the gate oxide layer.

18. The non-transitory, computer readable medium of claim 17 , further comprising:

annealing the silicon carbide layer at a temperature of greater than approximately 2000 degrees Celsius.

19. The non-transitory, computer readable medium of claim 17 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process at a temperature of approximately 100 degrees Celsius to approximately 600 degrees Celsius; or

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process to a thickness of approximately 1 nm to approximately 100 nm.

20. The non-transitory, computer readable medium of claim 17 , further comprising:

depositing the silicon dioxide layer on the silicon carbide layer using the atomic layer deposition process with a gas precursor gas of SiCl 4 , NH 3 and H 2 O, bis(t-butylamino) silane (BTBAS), bis(diethylamino)silane (BDEAS), trisilylamine (TSA), or diisopropylamino silane (DIPAS); or

performing at least one interface treatment on the silicon dioxide layer including high temperature, oxygen/nitrogen radical treatment, or an additional oxide deposition.