Granted Patent B2

US 12,196,792 · App. 18/661,564 · Granted Jan 14, 2025

Inventors: Wei Wu (Shanghai, CN); Li Lu (Beijing, CN); Jianghong Wan (Shanghai, CN)

Assignee: SHANGHAI JIAOTONG UNIVERSITY

G01R27/04

Abstract

Claims (60)

1. A non-destructive measurement method for the turn-to-turn resistivity distribution (TTRD) in non-insulation (NI) superconducting coils, the method comprising:

obtaining multiple experimental values of voltage varying over preset time at different positions of the test coil during the discharging or charging process, wherein the test coil is an NI high-temperature superconducting (HTS) coil;

dividing the test coil into a plurality of measurement units and obtaining a plurality of basic circuit elements; each basic circuit element corresponds to a measurement unit and is used to represent the coil inductance of the measurement unit, the resistance of the coil in the direction of current flow in the measurement unit, and the turn-to-turn resistance of the measurement unit;

constructing an equivalent circuit model using the multiple basic circuit elements; and based on the equivalent circuit model, obtaining multiple first simulated values of voltage varying over preset time at different positions of the test coil; aligning the timestamps of the multiple first simulated values with the multiple experimental values; and

determining the TTRD of the test coil based on the fitness value between the multiple experimental values and the multiple first simulated values; wherein the fitness value represents the fitness value between the multiple experimental values and the multiple first simulated values; and the TTRD is an array composed of turn-to-turn resistivity (TTR) within different measurement units and the numbers of the measurement units; the TTR within a measurement unit is obtained by multiplying the turn-to-turn resistance within the measurement unit by the turn-to-turn contact area within the measurement unit;

wherein the step of obtaining multiple first simulated values of voltage varying over preset time at different positions of the test coil based on the equivalent circuit model comprises:

inputting the multiple experimental values into the equivalent circuit model to obtain multiple TTR values for each measurement unit over the preset time;

one experimental value corresponds to one TTR value;

averaging the multiple TTR values for each measurement unit over the preset time to obtain the first average TTR value for each measurement unit within the preset time; and

inputting the first average TTR value for each measurement unit into the equivalent circuit model to obtain multiple first simulated values of voltage variation over preset time at different positions of the test coil.

2. The method according to claim 1 , wherein the equivalent circuit model where the test coil is an open-loop coil comprises:

a DC power supply; and

a unit set formed by serially connecting the multiple basic circuit units;

wherein the DC power supply supplies power to the equivalent circuit model;

the unit set includes a first interface and a second interface; the first interface represents the current flowing into the unit set, and the second interface represents the current flowing out of the unit set; and

the input end of the DC power supply is connected to the first interface, and the output end is connected to the second interface.

3. A non-destructive measurement method for the TTRD in NI superconducting coils, the method comprising:

obtaining multiple experimental values of voltage varying over preset time at different positions of the test coil during the discharging or charging process, wherein the test coil is an NI HTS coil;

dividing the test coil into a plurality of measurement units and obtaining a plurality of basic circuit elements; each basic circuit element corresponds to a measurement unit and is used to represent the coil inductance of the measurement unit, the resistance of the coil in the direction of current flow in the measurement unit, and the turn-to-turn resistance of the measurement unit;

constructing an equivalent circuit model using the multiple basic circuit elements; and based on the equivalent circuit model, obtaining multiple first simulated values of voltage varying over preset time at different positions of the test coil; aligning the timestamps of the multiple first simulated values with the multiple experimental values; and

determining the TTRD of the test coil based on the fitness value between the multiple experimental values and the multiple first simulated values; wherein the fitness value represents the fitness value between the multiple experimental values and the multiple first simulated values; and the TTRD is an array composed of TTR within different measurement units and the numbers of the measurement units; the TTR within a measurement unit is obtained by multiplying the turn-to-turn resistance within the measurement unit by the turn-to-turn contact area within the measurement unit;

wherein the equivalent circuit model where the test coil is a closed-loop coil comprises:

a DC power supply, a persistent current switch (PCS), and a unit set formed by serially connecting the basic circuit elements of the multiple measurement units;

wherein the DC power supply supplies power to the equivalent circuit model; the PCS is used to make the unit set operate in a closed loop; and

the input end of the DC power supply is connected to the first interface, and the output end is connected to the second interface; one end of the PCS is connected to the first interface, and the other end is connected to the second interface.

4. The method according to claim 3 , wherein the step of determining the TTRD of the test coil based on the fitness value between the multiple experimental values and the multiple first simulated values comprises:

determining multiple first fitting residual values based on the multiple first simulated values and the multiple experimental values; one first fitting residual value is the difference between one first simulated value and one experimental value at the same time;

computing the sum of squares of the multiple first fitting residual values to determine the first objective function value; the first objective function value is positively correlated with the sum of squares of the multiple first fitting residual values;

when the first objective function value is not greater than a target error value, considering the first average TTR value for each measurement unit as the TTR within the measurement unit and determining the TTRD of the test coil; and

when the first objective function value is greater than the target error value, iterating to obtain the second objective function value based on a preset iterative algorithm until the second objective function value is not greater than the target error value; considering the second objective function value corresponding to each measurement unit as the TTR within the measurement unit and determining the TTRD of the test coil;

wherein the initial value of the preset iterative algorithm is the first average TTR value, and the independent variable range is the first preset resistivity range based on the first average TTR value; the second objective function value is used to represent the sum of squares of multiple second fitting residual values obtained by multiple second simulated values corresponding to the TTR and experimental values during the iteration process, where the second fitting residual value is the difference between one second simulated value and one experimental value at the same time.

5. The method according to claim 1 , wherein the step of obtaining the second objective function value comprises:

when extracting the target TTR from the second preset resistivity range, inputting the target TTR into the equivalent circuit model to obtain multiple second simulated values of voltage varying over preset time at different positions of the test coil corresponding to the target TTR;

determining multiple second fitting residual values based on the multiple second simulated values and the multiple experimental values; and

computing the sum of squares of the multiple second fitting residual values to determine the second objective function value.

6. A non-destructive measurement method for TTRD in NI superconducting coils, the method comprising:

obtaining multiple experimental values of voltage varying over preset time at different positions of the test coil during the discharging or charging process, wherein the test coil is an NI HTS coil;

dividing the test coil into a plurality of measurement units and obtaining a plurality of basic circuit elements; each basic circuit element corresponds to a measurement unit and is used to represent the coil inductance of the measurement unit, the resistance of the coil in the direction of current flow in the measurement unit, and the turn-to-turn resistance of the measurement unit;

constructing an equivalent circuit model using the multiple basic circuit elements; and based on the equivalent circuit model, obtaining multiple first simulated values of voltage varying over preset time at different positions of the test coil; aligning the timestamps of the multiple first simulated values with the multiple experimental values;

determining the TTRD of the test coil based on the fitness value between the multiple experimental values and the multiple first simulated values; wherein the fitness value represents the fitness value between the multiple experimental values and the multiple first simulated values; and the TTRD is an array composed of TTR within different measurement units and the numbers of the measurement units; the TTR within a measurement unit is obtained by multiplying the turn-to-turn resistance within the measurement unit by the turn-to-turn contact area within the measurement unit;

wherein the step of determining the TTRD of the test coil based on the fitness value between the multiple experimental values and the multiple first simulated values comprises:

using a preset iterative algorithm to continuously extract the target TTR from the second preset resistivity range, inputting the target TTR into the equivalent circuit model to obtain multiple first simulated values of voltage varying over preset time at different positions of the test coil;

calculating multiple first fitting residual values between the multiple experimental values and the multiple first simulated values; one first fitting residual value is the difference between one experimental value and one first simulated value at the same time; and

when the first objective function value is not greater than the target error value, the preset iterative algorithm stops, and the TTR corresponding to the first objective function value is considered as the TTR within the measurement unit, determining the TTRD of the test coil.

7. The method according to claim 1 , wherein the step of dividing the test coil into a plurality of measurement units comprises:

dividing the test coil based on the spatial measurement accuracy of the preset TTRD, wherein the test coil is divided perpendicular to the direction of winding of the test coil tape to obtain the plurality of measurement units;

wherein the spatial measurement accuracy of the TTRD is positively correlated with the number of measurement units.

8. The method according to claim 1 , wherein the basic circuit element comprises:

an inductance,

a turn-to-turn resistance,

a superconducting layer resistance, and

a matrix layer resistance;

wherein the inductance value of the inductance represents the inductance value of the coil, with the first end of the inductance connected to the first end of the turn-to-turn resistance and the second end connected to the first end of the superconducting layer resistance and the first end of the matrix layer resistance; and

the second end of the turn-to-turn resistance is connected to the second end of the superconducting layer resistance and the second end of the matrix layer resistance.

9. The method according to claim 1 , wherein the structure of the test coil comprises one or more of the following: closed-loop, open-loop, single-pancake, double-pancake.

10. A non-destructive measurement apparatus for the TTRD in NI superconducting coils, comprising:

a memory; and

a processor coupled to the memory;

wherein the memory stores program instructions, when executed by the processor, cause the apparatus to perform the method according to claim 1 .

11. A computer-readable storage medium comprising computer-readable instructions, wherein when the computer-readable instructions are executed on a computing device, the computing device performs the method according to claim 1 .

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (13)