Crossbar array with reduced disturbance
The present application provides methods for programming a circuit device with reduced disturbances. The methods may include: selecting a first target device on a target row of a plurality of rows and a target column of a plurality of columns; selecting the target row; connecting the plurality of rows other than the target row to a voltage potential with the same polarity as a programming signal; grounding the target column; preparing the programming signal on the target rows; sending a pulse signal enable an access transistor on the target column; and sending the programming signal to pass the first target device.
1. A method of programming a circuit device with reduced disturbances comprising:
selecting a first target device from a plurality of devices in a crossbar array, wherein the first target device is connected to a target row of a plurality of rows and a target column of a plurality of columns in the crossbar array;
selecting the target row;
pre-charging one or more unselected rows of the plurality of rows to a voltage potential with the same polarity as a programming signal;
grounding the target column;
preparing the programming signal on the target row until the programming signal becomes stable on the target row;
sending a pulse signal to enable an access transistor on the target column; and
causing the prepared programming signal to pass through the first target device.
2. The method as claimed in claim 1 , wherein the voltage potential is substantially the same as the programming signal.
3. The method as claimed in claim 1 , further comprising: choosing a second target device of the plurality of devices after sending a pulse signal to pass the first target device.
4. The method as claimed in claim 1 , wherein each of the plurality of devices comprises a device with tunable resistance.
5. The method as claimed in claim 4 , wherein the device with tunable resistance comprises at least one of a memristor, a floating gate, a phase change device, a Resistive Random-Access Memory (RRAM or ReRam), a Magnetoresistive Random-Access Memory (MRAM), a Dynamic random-access memory (DRAM), or a Static Random-Access Memory (static RAM or SRAM).
6. The method as claimed in claim 1 , wherein one or more unselected columns of the plurality of columns are grounded.
7. The method as claimed in claim 1 , wherein the one or more unselected columns are floating.
8. The method as claimed in claim 1 , wherein the one or more unselected rows are floating.
9. The method as claimed in claim 1 , wherein the one or more unselected rows are connected to a voltage source having the same polarity as the programming signal.
10. The method as claimed in claim 1 , wherein the one or more unselected rows comprises a predefined number of rows of the plurality of rows.
11. The method as claimed in claim 1 , wherein the target row is selected by a decoder.
12. The method as claimed in claim 11 , wherein the programming signal is generated by a signal generator.
13. The method as claimed in claim 12 , wherein the pulse signal is generated by a pulse generator.