Non-volatile memory and memory system
A memory system includes a plurality of memory cells each storing a first bit and a second bit and a control circuit. The control circuit is reads out first data, first partial data, and second partial data, each corresponding to the first bit, from the plurality of memory cells, read out second data, third partial data, and fourth partial data, each corresponding to the second bit, from the plurality of memory cells, generate first compressed data based on an OR operation of the first partial data and the third partial data, generate second compressed data based on an OR operation of the second partial data and the fourth partial data, and transmit the first data, the second data, the first compressed data, and the second compressed data to an external memory controller.
1. A non-volatile memory comprising
a plurality of memory cells each configured to store a first bit and a second bit; and
a control circuit,
wherein the control circuit is configured to
read out first hard bit data, first partial soft bit data, and second partial soft bit data, each corresponding to the first bit, from the plurality of memory cells,
read out second hard bit data, third partial soft bit data, and fourth partial soft bit data, each corresponding to the second bit, from the plurality of memory cells,
generate first compressed soft bit data based on an OR operation of the first partial soft bit data and the third partial soft bit data,
generate second compressed soft bit data based on an OR operation of the second partial soft bit data and the fourth partial soft bit data, and
transmit the first hard bit data, the second hard bit data, the first compressed soft bit data, and the second compressed soft bit data to an external memory controller.
2. The memory according to claim 1 , wherein
the control circuit is configured to transmit the first hard bit data, the second hard bit data, the first compressed soft bit data, and the second compressed soft bit data in accordance with a command from the memory controller.
3. The memory according to claim 2 , wherein
a size of the compressed soft bit data transmitted to the memory controller in accordance with the command does not depend on the number of bits stored in the plurality of memory cells.
4. The memory according to claim 2 , wherein
a size of the hard bit data transmitted to the memory controller in accordance with the command correlates with the number of bits stored in the plurality of memory cells.
5. The memory according to claim 1 , wherein
the plurality of memory cells are configured to further store a third bit, and
the control circuit is configured to
read out third hard bit data, fifth partial soft bit data, and sixth partial soft bit data, each corresponding to the third bit, from the plurality of memory cells,
generate the first compressed soft bit data based on an OR operation of the first partial soft bit data, the third partial soft bit data, and the fifth partial soft bit data,
generate the second compressed soft bit data based on an OR operation of the second partial soft bit data, the fourth partial soft bit data, and the sixth partial soft bit data, and
transmit, to the memory controller, the first hard bit data, the second hard bit data, the third hard bit data, the first compressed soft bit data, and the second compressed soft bit data.
6. The memory according to claim 5 , wherein
the plurality of memory cells are configured to further store a fourth bit, and
the control circuit is configured to
read out fourth hard bit data, seventh partial soft bit data, and eighth partial soft bit data, each corresponding to the fourth bit, from the plurality of memory cells,
generate the first compressed soft bit data based on an OR operation of the first partial soft bit data, the third partial soft bit data, the fifth partial soft bit data, and the seventh partial soft bit data,
generate the second compressed soft bit data based on an OR operation of the second partial soft bit data, the fourth partial soft bit data, the sixth partial soft bit data, and the eighth partial soft bit data, and
transmit, to the memory controller, the first hard bit data, the second hard bit data, the third hard bit data, the fourth hard bit data, the first compressed soft bit data, and the second compressed soft bit data.
7. The memory according to claim 1 , wherein
the control circuit is configured to
read out the first hard bit data, first data, and second data from the plurality of memory cells based on a first read process using a first voltage,
generate the first partial soft bit data based on the first hard bit data and the first data, and
generate the second partial soft bit data based on the first hard bit data and the second data, and
a sense period corresponding to the first hard bit data is longer than a sense period corresponding to the first data, and shorter than a sense period corresponding to the second data.
8. The memory according to claim 7 , wherein
the control circuit is configured to
read out the second hard bit data, third data, and fourth data from the plurality of memory cells based on a second read process using a second voltage and a third read process using a third voltage,
generate the third partial soft bit data based on the second hard bit data and the third data, and
generate the fourth partial soft bit data based on the second hard bit data and the fourth data, and
a sense period corresponding to the second hard bit data is longer than a sense period corresponding to the third data, and shorter than a sense period corresponding to the fourth data.
9. The memory according to claim 8 , wherein
the control circuit is configured to perform the first read process between the second read process and the third read process.
10. The memory according to claim 8 , wherein
the control circuit is configured to perform the second read process and the third read process continuously with respect to the first read process.
11. A memory system comprising:
a non-volatile memory including a plurality of memory cells each configured to store a first bit and a second bit; and
a memory controller configured to cause the non-volatile memory to perform a first operation,
wherein the non-volatile memory is configured to, in the first operation,
read out first hard bit data, first partial soft bit data, and second partial soft bit data, each corresponding to the first bit, from the plurality of memory cells,
read out second hard bit data, third partial soft bit data, and fourth partial soft bit data, each corresponding to the second bit, from the plurality of memory cells,
generate first compressed soft bit data based on an OR operation of the first partial soft bit data and the third partial soft bit data, and
generate second compressed soft bit data based on an OR operation of the second partial soft bit data and the fourth partial soft bit data, and
the memory controller is configured to
restore first soft bit data and second soft bit data based on the first hard bit data, the second hard bit data, the first compressed soft bit data, and the second compressed soft bit data.
12. The system according to claim 11 , wherein
the memory controller is configured to perform a soft determination decoding process based on the first soft bit data and the second soft bit data.
13. The system according to claim 11 , wherein
the first soft bit data corresponds to an OR operation of the first partial soft bit data and the second partial soft bit data, and
the second soft bit data corresponds to an OR operation of the third partial soft bit data and the fourth partial soft bit data.
14. The system according to claim 11 , wherein
the non-volatile memory is configured to perform the first operation in accordance with a command from the memory controller.
15. The system according to claim 14 , wherein
a size of the compressed soft bit data transmitted to the memory controller in accordance with the command does not depend on the number of bits stored in the plurality of memory cells.
16. The system according to claim 14 , wherein
a size of the hard bit data transmitted to the memory controller in accordance with the command correlates with the number of bits stored in the plurality of memory cells.
17. The system according to claim 11 , wherein
the non-volatile memory is configured to, in the first operation,
read out, from the plurality of memory cells, the first hard bit data, first data, and second data based on a first read process using a first voltage,
generate the first partial soft bit data based on the first hard bit data and the first data, and
generate the second partial soft bit data based on the first hard bit data and the second data, and
a sense period corresponding to the first hard bit data is longer than a sense period corresponding to the first data, and shorter than a sense period corresponding to the second data.
18. The system according to claim 17 , wherein
the non-volatile memory is configured to, in the first operation,
read out, from the plurality of memory cells, the second hard bit data, third data, and fourth data based on a second read process using a second voltage and a third read process using a third voltage,
generate the third partial soft bit data based on the second hard bit data and the third data, and
generate the fourth partial soft bit data based on the second hard bit data and the fourth data, and
a sense period corresponding to the second hard bit data is longer than a sense period corresponding to the third data, and shorter than a sense period corresponding to the fourth data.
19. The system according to claim 18 , wherein
the non-volatile memory is configured to perform the first read process between the second read process and the third read process.
20. The system according to claim 18 , wherein
the non-volatile memory is configured to perform the second read process and the third read process continuously with respect to the first read process.