Dummy poly layout for high density devices
An array of poly lines on an active device area of an integrated chip is extended to form a dummy device structure on an adjacent isolation region. The resulting dummy device structure is an array of poly lines having the same line width, line spacing, and pitch as the array of poly lines on the active device area. The poly lines of the dummy device structure are on grid with the poly lines on the active device area. Because the dummy device structure is formed of poly lines that are on grid with the poly lines on the active device area, the dummy device structure may be much closer to the active device area than would otherwise be possible. The resulting proximity of the dummy device structure to the active device area improves anti-dishing performance and reduces empty space on the integrated chip.
1. An integrated chip, comprising:
a semiconductor substrate;
an isolation structure at a surface of the semiconductor substrate, wherein the isolation structure surrounds and provides borders that define each of a first active device area and a second active device area, wherein the isolation structure extends across a space extending from the first active device area to the second active device area, and the space is a dummy device area;
first linear features in a first array having a pitch, wherein the first linear features extend over the first active device area, have a first width, and are spaced apart by a first spacing;
second linear features in a second array having the pitch, wherein the second linear features extend over the second active device area, have the first width, and are spaced apart by the first spacing;
third linear features in a dummy device structure having the pitch, wherein the third linear features are in the dummy device area, have the first width, and are spaced apart by the first spacing; and
the first linear features, the second linear features, and the third linear features are on a grid having the pitch;
wherein the first linear features are integrated into first active devices in the first active device area and the second linear features are integrated into second active devices in the second active device area, and the third linear features provide dummy devices in the dummy device area.
2. The integrated chip of claim 1 , wherein:
the dummy device structure is separated from the first array by the first spacing; and
the dummy device structure is separated from the second array by the first spacing.
3. The integrated chip of claim 2 , wherein:
a first one of the third linear features is side-by-side with one of the first linear features; and
a second one of the third linear features is side-by-side with one of the second linear features.
4. The integrated chip of claim 2 , wherein:
the dummy device structure is on a first side of the first array;
the dummy device structure is on a second side of the first array; and
the first side is perpendicular to the second side.
5. The integrated chip of claim 1 , wherein some of the third linear features are aligned end-to-end with some of the first linear features and end-to-end with some of the second linear features.
6. The integrated chip of claim 1 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend perpendicular to a direction from the first active device area to the second active device area.
7. The integrated chip of claim 1 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend parallel to a direction from the first active device area to the second active device area.
8. The integrated chip of claim 1 , wherein:
the first linear features are word lines formed crosswise over an array of semiconductor fins; and
metal interconnect lines are disposed between the first linear features.
9. An integrated chip, comprising:
a semiconductor substrate comprising a first active device area, a second active device area, and a dummy device area that extends between the first active device area and the second active device area;
a metal interconnect structure over the semiconductor substrate;
an isolation structure in the dummy device area, wherein the isolation structure surrounds and establishes boundaries for the first active device area and the second active device areas, and the isolation structure extends from the first active device area to the second active device area;
first linear features in a first array, wherein the first linear features extend over the first active device area, have a first width, and are spaced apart by a first spacing;
second linear features in a second array, wherein the second linear features extend over the second active device area, have the first width, and are spaced apart by the first spacing; and
third linear features in a dummy device structure, wherein the third linear features are in the dummy device area, have the first width, are spaced apart by the first spacing, and extend over the isolation structure;
wherein the first linear features, the second linear features, and the third linear features all fall on a grid having the first spacing;
and the first linear features and the second linear features have connections to the metal interconnect structure and are integrated into active devices.
10. The integrated chip of claim 9 , wherein:
the dummy device structure is separated from the first array by the first spacing; and
the dummy device structure is separated from the second array by the first spacing.
11. The integrated chip of claim 10 , wherein:
a first one of the third linear features is side-by-side with one of the first linear features; and
a second one of the third linear features is side-by-side with one of the second linear features.
12. The integrated chip of claim 10 , wherein:
the dummy device structure is on a first side of the first array;
the dummy device structure is on a second side of the first array; and
the first side is perpendicular to the second side.
13. The integrated chip of claim 9 , wherein some of the third linear features are aligned end-to-end with some of the first linear features and end-to-end with some of the second linear features.
14. The integrated chip of claim 9 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend perpendicular to a direction from the first active device area to the second active device area.
15. The integrated chip of claim 9 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend parallel to a direction from the first active device area to the second active device area.
16. The integrated chip of claim 9 , wherein:
the first linear features are word lines formed crosswise over an array of semiconductor fins; and
metal interconnect lines are disposed between the first linear features.
17. An integrated chip, comprising:
a semiconductor substrate;
a shallow trench isolation structure at a surface of the semiconductor substrate, wherein the shallow trench isolation structure surrounds and provides borders that define each of a first active device area and a second active device area, wherein the shallow trench isolation structure extends across a dummy device area, which is an area that extends across a space between the first active device area and the second active device area;
first linear features in a first array, wherein the first linear features extend over the first active device area, provide electrodes for first active devices, have a first width, and are spaced apart by a first spacing;
second linear features in a second array, wherein the second linear features extend over the second active device area, provide electrodes for second active devices, have a second width, and are spaced apart by a second spacing; and
third linear features in a dummy device structure, wherein the third linear features are in the dummy device area, are over the shallow trench isolation structure, have the first width, and are spaced apart by the first spacing;
wherein the first active device area is rectangular having a first side, a second side, a third side, and a fourth side; and
some of the third linear features are on the first side, some of the third linear features are on the second side, some of the third linear features are on the third side, and some of the third linear features are on the fourth side.
18. The integrated chip of claim 17 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend perpendicular to a direction from the first active device area to the second active device area.
19. The integrated chip of claim 17 , wherein:
eight or more of the third linear features are between the first active device area and the second active device area; and
the third linear features extend parallel to a direction from the first active device area to the second active device area.
20. The integrated chip of claim 17 , further comprising, a metal interconnect structure over the semiconductor substrate, wherein the first linear features and the second linear features have connections to wires in the metal interconnect structure.