Memory system
According to one embodiment, a memory system includes a nonvolatile semiconductor storage device and a memory controller. The nonvolatile semiconductor storage device includes at least one memory device including a plurality of memory cells corresponding to a plurality of pages. The memory controller is configured to control the nonvolatile semiconductor storage device. The pages include a first page. The memory controller is configured to: read first data stored in the first page from the nonvolatile semiconductor storage device; correct a fail bit included in the read first data; generate first spare data including information on the fail bit corrected in the read first data; and store the first spare data in the nonvolatile semiconductor storage device.
1. A memory system comprising:
a nonvolatile semiconductor storage device including at least one memory device including a plurality of memory cells corresponding to a plurality of pages; and
a memory controller configured to control the nonvolatile semiconductor storage device, wherein
the pages include a first page, and
the memory controller is configured to:
read first data stored in the first page from the nonvolatile semiconductor storage device;
correct a fail bit included in the read first data;
generate first spare data including information on the fail bit corrected in the read first data; and
store the first spare data in the nonvolatile semiconductor storage device, wherein
in a read operation of the first page, the memory controller is configured to:
read the first data and the first spare data stored in the first page from the nonvolatile semiconductor storage device; and
correct the fail bit included in the read first data based on the first spare data.
2. The memory system of claim 1 , wherein
the read first data includes second data including the fail bit and third data different from the second data,
the first spare data is generated based on the second data, and
the first spare data is not based on the third data.
3. The memory system of claim 1 , wherein
the first spare data includes information of a corrected bit of the corrected fail bit and address information of the corrected fail bit.
4. The memory system of claim 1 , wherein
the first spare data includes a parity generated using the read first data.
5. The memory system of claim 1 , wherein
the pages include a second page different from the first page and storing the first spare data.
6. The memory system of claim 5 , wherein
the nonvolatile semiconductor storage device includes a first memory device including the first page and a second memory device including the second page.
7. The memory system of claim 6 , wherein
in a read operation of the first page, the memory controller is configured to execute reading of the first page by the first memory device and reading of the second page by the second memory device in parallel.
8. The memory system of claim 5 , wherein
the pages include a third page, and
the memory controller is configured to:
read second data stored in the third page from the nonvolatile semiconductor storage device;
correct the fail bit included in the read second data;
generate second spare data including information on the corrected fail bit of the second data; and
store the second spare data in the second page when the first spare data is stored in the second page.
9. The memory system of claim 8 , wherein
the second page includes a parity generated based on the first spare data and the second spare data.
10. The memory system of claim 1 , wherein
the memory controller is configured to store the first spare data in the first page.
11. The memory system of claim 10 , wherein
the memory device sets the memory cells in which the first data is stored to write inhibition in a write operation of storing the first spare data in the first page.
12. The memory system of claim 1 , wherein
the memory controller is configured to:
periodically execute a read operation for each of the pages;
count the number of fail bits of each of the pages based on a correction result of read data; and
generate spare data including information on the fail bit based on the number of fail bits.
13. The memory system of claim 1 , wherein
the memory controller is configured to generate the first spare data in a case where the number of fail bits included in the data of the read first page is equal to or more than a first threshold and less than a second threshold larger than the first threshold.
14. The memory system of claim 13 , wherein
the memory controller does not generate the first spare data in a case where the number of fail bits included in the data of the read first page is less than the first threshold.
15. The memory system of claim 13 , wherein
the pages include a fourth page, and
the memory controller is configured to store the corrected first data in the fourth page in a case where the number of fail bits included in the data of the read first page is equal to or more than the second threshold.
16. The memory system of claim 1 , wherein
the memory controller has a look-up table that associates a logical address received from an external host device with a physical address of the pages, and
the look-up table includes a first entry including the physical address of the first page and the physical address of the first spare data associated with the first entry.
17. The memory system of claim 16 , wherein
the look-up table includes a second entry associated with the first entry, and the second entry includes the physical address of the first spare data.
18. The memory system of claim 16 , wherein
the first entry includes the physical address of the first spare data.
19. The memory system of claim 1 , wherein
the each of the memory cells is configured to store data of five or more bits.