Modeling method and apparatus, computer device and storage medium
A modeling method includes the following: acquiring electrical parameters of each sub-structure in a through silicon via (TSV) structure; obtaining an electrical topology network model according to a connection relationship of each TSV structure between two dies; and obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters.
1. A modeling method, comprising:
acquiring electrical parameters of each sub-structure in a through silicon via (TSV) structure;
obtaining an electrical topology network model according to a connection relationship of each TSV structure between two dies; and
obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters.
2. The modeling method according to claim 1 , wherein the two dies are a first die and a second die, respectively; each sub-structure comprises a bump pad sub-structure and a TSV sub-structure, wherein an end of the bump pad sub-structure is electrically connected to the second die, another end of the bump pad sub-structure is electrically connected to an end of the TSV sub-structure; a through via is provided on the first die to allow the TSV sub-structure to pass through to electrically connect another end of the TSV sub-structure to the first die; and the electrical parameters comprise electrical parameters of the bump pad sub-structure and electrical parameters of the electrical parameters of the TSV sub-structure.
3. The modeling method according to claim 2 , wherein the acquiring electrical parameters of each sub-structure in a TSV structure comprises:
acquiring a schematic diagram of the TSV structure;
obtaining a material composition sectional view of each sub-structure in the TSV structure based on the schematic diagram of the TSV structure, wherein the material composition sectional view of the sub-structure comprises material information and dimension information of the sub-structure; and
obtaining the electrical parameters based on the material information and the dimension information of each sub-structure.
4. The modeling method according to claim 3 , wherein the electrical parameters comprise resistance parameters, capacitance parameters, and inductance parameters.
5. The modeling method according to claim 4 , wherein when there are a plurality of TSV structures between the two dies, the plurality of TSV structures are the same, and the electrical topology network model comprises a plurality of sub-network models, the amount of the plurality of sub-network models is equal to the amount of the plurality of TSV structures;
each of the plurality of sub-network models comprises a bump pad sub-resistance, a TSV resistance, a bump pad sub-capacitance, a TSV capacitance, a bump pad sub-inductance, and a TSV inductance, wherein the bump pad sub-resistance, the bump pad sub-inductance, the TSV inductance and the TSV resistance are sequentially connected in series between the second die and the first die, an end of the bump pad sub-capacitance is connected between the second die and the bump pad sub-resistance, another end of the bump pad sub-capacitance is connected to a preset distal end, an end of the TSV capacitance is connected between the bump pad sub-inductance and the TSV inductance, and another end of the TSV capacitance is connected to another TSV capacitance in the sub-network model.
6. The modeling method according to claim 5 , wherein the obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters comprises:
obtaining a simulation model file based on the sub-network model and the electrical parameters;
configuring a TSV structure symbol between a circuit model of the first die and a circuit model of the second die according to the amount of the TSV structure between the two dies to obtain a first circuit model; and
obtaining the simulation model for simulation based on the first circuit model and the simulation model file.
7. The modeling method according to claim 5 , wherein when the amount of the dies is greater than two, the obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters comprises:
obtaining a simulation model file based on the sub-network model and the electrical parameters;
configuring TSV structure symbols between all every two adjacent dies according to the amount of the TSV structure between two adjacent dies to obtain a second circuit model; and
obtaining the simulation model for simulation based on the second circuit model and the simulation model file.
8. The modeling method according to claim 3 , wherein the bump pad sub-structure comprises a first copper layer, a second copper layer, a first nickel layer, a tin-silver alloy layer, and a second nickel layer sequentially stacked, the TSV sub-structure comprises a third copper layer;
in the process of obtaining the electrical parameters based on the material information and the dimension information of each sub-structure, the electrical parameters of the bump pad sub-structure are obtained based on the material information and the dimension information of the first copper layer, the second copper layer, the first nickel layer, the tin-silver alloy layer, and the second nickel layer, and the electrical parameters of the TSV sub-structure are obtained based on the material information and the dimension information of the third copper layer.
9. The modeling method according to claim 8 , further comprising:
obtaining an optimized structure of the TSV structure according to a simulation result.
10. The modeling method according to claim 9 , wherein the obtaining an optimized structure of the TSV structure according to a simulation result comprises:
optimizing a height and/or a width of the bump pad sub-structure, optimizing a width and/or a height of the TSV sub-structure, optimizing a material composition and ratio in the bump pad sub-structure, and optimizing a spacing between each TSV structure between two of the dies.
11. The modeling method according to claim 9 , wherein the first die comprises a base material layer and a plurality of metal layers, wherein the plurality of metal layers are sequentially stacked below the base material layer, a through via is provided on the base material layer to allow the TSV sub-structure to pass through, and the TSV sub-structure is electrically connected to one of the plurality of metal layers,
wherein the obtaining an optimized structure of the TSV structure according to a simulation result comprises: re-determining a metal layer electrically connected to the TSV sub-structure.
12. A non-transitory computer-readable storage medium having a computer program stored thereon, and the computer program implementing the processes in the method according to claim 1 when executed by a processor.
13. A modeling apparatus, comprising:
an acquisition circuit, configured to acquire electrical parameters of each sub-structure in a through silicon via (TSV) structure;
an electrical topology network model processor, configured to obtain an electrical topology network model according to a connection relationship of each TSV structure between two dies; and
a simulation model processor, configured to obtain a simulation model for simulation based on the electrical topology network model and the electrical parameters.
14. The modeling apparatus according to claim 13 , wherein the two die sheets are a first die and a second die, respectively; each sub-structure comprises a bump pad sub-structure and a TSV sub-structure, wherein an end of the bump pad sub-structure is electrically connected to the second die, another end of the bump pad sub-structure is electrically connected to an end of the TSV sub-structure; a through via is provided on the first die to allow the TSV sub-structure to pass through to electrically connect another end of the TSV sub-structure to the first die; and the electrical parameters comprise electrical parameters of the bump pad sub-structure and electrical parameters of the TSV sub-structure.
15. The modeling apparatus according to claim 14 , wherein the acquisition circuit is further configured to:
acquire a schematic diagram of the TSV structure;
obtain a material composition sectional view of each sub-structure in the TSV structure based on the schematic diagram of the TSV structure, wherein the material composition sectional view of the sub-structure comprises material information and dimension information of the sub-structure; and
obtain the electrical parameters based on the material information and the dimension information of each sub-structure.
16. The modeling apparatus according to claim 15 , wherein the electrical parameters comprise resistance parameters, capacitance parameters, and inductance parameters.
17. The modeling apparatus according to claim 16 , wherein when there are a plurality of TSV structures between the two dies, the plurality of TSV structures are the same, and the electrical topology network model comprises a plurality of sub-network models, the amount of the plurality of sub-network models is equal to the amount of the plurality of TSV structures;
each of the plurality of sub-network models comprises a bump pad sub-resistance, a TSV resistance, a bump pad sub-capacitance, a TSV capacitance, a bump pad sub-inductance, and a TSV inductance, wherein the bump pad sub-resistance, the bump pad sub-inductance, the TSV inductance and the TSV resistance are sequentially connected in series between the second die and the first die, an end of the bump pad sub-capacitance is connected between the second die and the bump pad sub-resistance, another end of the bump pad sub-capacitance is connected to a preset distal end, an end of the TSV capacitance is connected between the bump pad sub-inductance and the TSV inductance, and another end of the TSV capacitance is connected to another TSV capacitance in the sub-network model.
18. The modeling apparatus according to claim 17 , wherein the simulation model processor is further configured to:
obtain a simulation model file based on the sub-network model and the electrical parameters;
configure a TSV structure symbol between a circuit model of the first die and a circuit model of the second die according to the amount of the TSV structure between the two dies to obtain a first circuit model; and
obtain the simulation model for simulation based on the first circuit model and the simulation model file.
19. The modeling apparatus according to claim 17 , wherein when the amount of the dies is greater than two, the simulation model processor is further configured to:
obtain a simulation model file based on the sub-network model and the electrical parameters;
configure TSV structure symbols between all every two adjacent dies according to the amount of the TSV structure between two adjacent dies to obtain a second circuit model; and
obtain the simulation model for simulation based on the second circuit model and the simulation model file.
20. A computer device comprising a memory and a processor, the memory storing a computer program, the processor, when executing the computer program, implements operations comprising:
acquiring electrical parameters of each sub-structure in a through silicon via (TSV) structure;
obtaining an electrical topology network model according to a connection relationship of each TSV structure between two dies; and
obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters.