IP Library › Granted Patent US 12,205,748
Granted Patent B2
US 12,205,748 · App. 17/408,632 · Granted Jan 21, 2025

Inductor device

Inventors: Hsiao-Tsung Yen (Hsinchu, TW); Hung-Han Chen (Hsinchu, TW); Ka-Un Chan (Hsinchu, TW)
Assignee: REALTEK SEMICONDUCTOR CORPORATION
H01F27/2804H01F27/2823H01F27/29H01F2027/2809
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,205,748
App. No.
17/408,632
Granted
Jan 21, 2025
Kind
B2
Abstract

An inductor device includes a first trace, a second trace, and a capacitor. The first trace includes a first and a second sub-trace. The first sub-trace includes first wires, and the second sub-trace includes second wires. The second sub-trace is coupled to the first sub-trace at a first node. The first and the second wires are disposed to each other in an interlaced manner, and located at an outer side of the inductor device. The second trace includes a third and a fourth sub-trace. The third sub-trace includes third wires, and the fourth sub-trace includes fourth wires. The fourth sub-trace is coupled to the third sub-trace at a second node. The third and the fourth wires are disposed to each other in an interlaced manner, and located at an outer side of the inductor device. The capacitor is coupled between the first and the second node.

Claims (35)

1. An inductor device, comprising:

a first trace, comprising:

a first sub-trace, comprising a plurality of first wires; and

a second sub-trace, comprising a plurality of second wires, and coupled to the first sub-trace at a first node, wherein the first wires and the second wires are disposed to each other in an interlaced manner, and located at an outer side of the inductor device;

a second trace, comprising:

a third sub-trace, comprising a plurality of third wires; and

a fourth sub-trace, comprising a plurality of fourth wires, and coupled to the third sub-trace at a second node, wherein the third wires and the fourth wires are disposed to each other in an interlaced manner, and located at an outer side of the inductor device; and

a capacitor, coupled between the first node and the second node.

2. The inductor device of claim 1 , wherein the second sub-trace is coupled to the first sub-trace at the first node.

3. The inductor device of claim 2 , wherein the fourth sub-trace is coupled to the the third sub-trace at the second node.

4. The inductor device of claim 3 , wherein the first trace further comprises:

a fifth sub-trace, comprising:

a plurality of fifth wires, located above the first wires, and coupled to the first wires; and

a sixth sub-trace, comprising:

a plurality of sixth wires, located above the second wires, and coupled to the second wires, wherein the fifth wires and the sixth wires are disposed to each other in an interlaced manner, and located at an outer side of the inductor device.

5. The inductor device of claim 4 , wherein the first wires and the second wires are located on a first layer, and the fifth wires and the sixth wires are located on a second layer.

6. The inductor device of claim 5 , wherein the fifth wires and the first wires are coupled to each other at an innermost side of the fifth wires.

7. The inductor device of claim 6 , wherein the fifth wires and the first wires are coupled to each other at an outermost side of the fifth wires.

8. The inductor device of claim 7 , wherein the sixth wires and second wires are coupled to each other at an innermost side of the sixth wires.

9. The inductor device of claim 8 , wherein the sixth wires and the second wires are coupled to each other at an outermost side of the sixth wires.

10. The inductor device of claim 9 , wherein the first wires and the fifth wires are overlapped to each other partially.

11. The inductor device of claim 10 , wherein the second wires and the sixth wires are overlapped to each other partially.

12. The inductor device of claim 11 , wherein the first wires and the sixth wires are overlapped to each other partially.

13. The inductor device of claim 12 , wherein the second wires and the fifth wires are overlapped to each other partially.

14. The inductor device of claim 1 , wherein the first wires and the second wires are disposed at a first side of the inductor device, and the third wires and the fourth wires are disposed at a second side of the inductor device.

15. The inductor device of claim 14 , wherein the first side and the second side are located at two sides of the inductor device which are opposite to each other.

16. The inductor device of claim 15 , further comprising:

a first connection member, coupled to the first sub-trace and the first wires; and

a second connection member, coupled to the second sub-trace and the second wires.

17. The inductor device of claim 16 , wherein the first sub-trace and the second sub-trace are located on a first layer, and the first connection member and the second connection member are located on a second layer.

18. The inductor device of claim 16 , further comprising:

a third connection member, coupled to the third sub-trace and the third wires; and

a fourth connection member, coupled to the fourth sub-trace and the fourth wires.

19. The inductor device of claim 18 , wherein the third sub-trace and the fourth sub-trace are located on the first layer, and the third connection member and the fourth connection member are located on the second layer.

20. The inductor device of claim 19 , wherein the first layer is different from the second layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2021
From: YEN, HSIAO-TSUNG; CHEN, HUNG-HAN; CHAN, KA-UN
To: REALTEK SEMICONDUCTOR CORPORATION
Reel/Frame 057252/0879 →
Priority Claims (1)
TW 109128807 · Aug 24, 2020 · national
Continuity (1)
Related Publication 20220059277A1 · Feb 24, 2022
References Cited (13)
US 6972658B1 · Findley · 2005 [cited by examiner]
US 7902953B1 · Watt · 2011 [cited by examiner]
US 8325001B2 · Huang · 2012 [cited by examiner]
US 20080048760A1 · El Rai · 2008 [cited by examiner]
US 20110102093A1 · El Rai · 2011 [cited by examiner]
US 20150364241A1 · Groves · 2015 [cited by examiner]
US 20170098500A1 · Yen · 2017 [cited by examiner]
US 20180254313A1 · Huang · 2018 [cited by examiner]
US 20180330872A1 · Yen · 2018 [cited by examiner]
US 20190279809A1 · Yen · 2019 [cited by examiner]
US 20200312530A1 · Yen · 2020 [cited by examiner]
US 20210074465A1 · Yen et al. · 2021 [cited by applicant]
US 20210074466A1 · Yen et al. · 2021 [cited by applicant]