Rayleigh mode surface acoustic wave resonator
Surface acoustic wave resonators are disclosed. In certain embodiments, a surface acoustic wave resonator can include a high impedance layer, a piezoelectric layer over the high impedance layer, an interdigital transducer electrode over the piezoelectric layer, and a low impedance layer between the high impedance layer and the piezoelectric layer. An acoustic impedance of the high impedance layer is greater than an acoustic impedance of the piezoelectric layer. An acoustic impedance of the low impedance layer is lower than the acoustic impedance of the high impedance layer. The piezoelectric layer can have a cut angle in a range from 115° to 135°. The surface acoustic wave resonator is configured to generate a Rayleigh mode surface acoustic wave having a wavelength of λ.
1. A surface acoustic wave resonator comprising:
a high impedance layer;
a piezoelectric layer over the high impedance layer, the piezoelectric layer having a cut angle in the range from 115° to 135° an acoustic impedance of the piezoelectric layer being lower than an acoustic impedance of the high impedance layer;
an interdigital transducer electrode over the piezoelectric layer; and
a temperature compensation layer over the interdigital transducer electrode such that the interdigital transducer electrode is positioned between the piezoelectric layer and the temperature compensation layer, the surface acoustic wave resonator configured to generate a shear horizontal mode surface acoustic wave.
2. The surface acoustic wave resonator of claim 1 wherein the piezoelectric layer has a thickness in a range from 0.1λ to 0.5λ.
3. The surface acoustic wave resonator of claim 1 wherein the piezoelectric layer is a lithium niobate layer.
4. The surface acoustic wave resonator of claim 1 further comprising a low impedance layer positioned between the high impedance layer and the piezoelectric layer, an acoustic impedance of the low impedance layer being lower than the acoustic impedance of the high impedance layer.
5. The surface acoustic wave resonator of claim 4 wherein the low impedance layer is a silicon dioxide layer.
6. The surface acoustic wave resonator of claim 5 wherein the low impedance layer has a thickness in a range from 0.01λ to 0.3λ.
7. The surface acoustic wave resonator of claim 1 wherein the high impedance layer is a silicon layer.
8. The surface acoustic wave resonator of claim 1 wherein the temperature compensation layer is a silicon dioxide layer, and the silicon dioxide layer has a thickness in a range from 0.01λ to 0.4λ.
9. The surface acoustic wave resonator of claim 1 further comprising a silicon nitride layer over the temperature compensation layer.
10. The surface acoustic wave resonator of claim 1 wherein a reflection coefficient of the surface acoustic wave resonator is at least 0.9 for a frequency range from 2 GHz to 3.75 GHz.
11. The surface acoustic wave resonator of claim 1 wherein a reflection coefficient of the surface acoustic wave resonator is at least 0.9 for a frequency range from above a pass band of a filter.
12. A surface acoustic wave resonator comprising:
a high impedance layer;
a lithium niobate layer over the high impedance layer, the lithium niobate layer having a cut angle in the range from 115° to 135°, an acoustic impedance of the lithium niobate layer lower than an acoustic impedance of the high impedance layer;
an interdigital transducer electrode over the piezoelectric layer; and
a first silicon dioxide layer over the interdigital transducer electrode such that the interdigital transducer electrode is positioned between the piezoelectric layer and the first silicon dioxide layer, the surface acoustic wave resonator configured to generate a shear horizontal mode surface acoustic wave.
13. The surface acoustic wave resonator of claim 12 wherein the lithium niobate layer has a thickness in a range from 0.1λ to 0.5λ.
14. The surface acoustic wave resonator of claim 12 wherein the second silicon dioxide layer has a thickness in a range from 0.01λ to 0.4λ.
15. The surface acoustic wave resonator of claim 12 wherein the high impedance layer is a silicon layer.
16. The surface acoustic wave resonator of claim 15 wherein the first silicon dioxide layer has a thickness in a range from 0.01λ to 0.3λ.
17. The surface acoustic wave resonator of claim 12 wherein a reflection coefficient of the surface acoustic wave resonator is at least 0.9 for a frequency range from 2 GHz to 3.75 GHz.
18. The acoustic wave resonator of claim 12 wherein a reflection coefficient of the surface acoustic wave resonator is at least 0.9 for a frequency range from above a pass band of a filter that includes the Rayleigh mode surface acoustic wave resonator to 3.75 GHz.
19. The surface acoustic wave resonator of claim 12 wherein the interdigital transducer electrode includes two layers.
20. The surface acoustic wave resonator of claim 12 further comprising a low impedance layer positioned between the high impedance layer and the piezoelectric layer, an acoustic impedance of the low impedance layer being lower than the acoustic impedance of the high impedance layer.