Semiconductor device having supporter pattern
A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.
1. A semiconductor device comprising:
a substrate;
a plurality of lower electrodes on the substrate, the plurality of lower electrodes spaced apart from each other by a first distance in a first direction and are spaced apart from each other by a second distance smaller than the first distance in a second direction perpendicular to the first direction;
a lower supporter pattern between the plurality of lower electrodes and including a plurality of lower supporter holes, each of the plurality of lower supporter holes has an oval shape including a major axis and a minor axis intersecting the major axis;
an upper supporter pattern between the plurality of lower electrodes and on the lower supporter pattern;
a dielectric layer on the plurality of lower electrodes, the lower supporter pattern and the upper supporter pattern; and
an upper electrode on the dielectric layer,
wherein each of the plurality of lower electrodes is pillar-shaped, and
at least one of the plurality of lower supporter holes exposes two first lower electrodes arranged in a minor-axis direction among the plurality of lower electrodes, and exposes two second lower electrodes arranged in a major-axis direction among the plurality of lower electrodes.
2. The semiconductor device of claim 1 , wherein an area of a side surface of at least one of the two first lower electrodes that are exposed by the at least one of the plurality of lower supporter holes is greater than an area of a side surface of at least one of the two second lower electrodes that are exposed by the at least one of the plurality of lower supporter holes.
3. The semiconductor device of claim 1 , wherein the plurality of lower electrodes are arranged in a honeycomb structure in which the plurality of lower electrodes are at corners and vertices of hexagons.
4. The semiconductor device of claim 1 , wherein a distance between centers of adjacent lower electrodes in the first direction is about 3.0 F, where F refers a minimum lithographic feature size.
5. The semiconductor device of claim 4 , wherein a distance between centers of adjacent lower electrodes in the second direction is about 2.6 F.
6. The semiconductor device of claim 1 , wherein the first direction is parallel to the minor-axis direction, and the second direction is parallel to the major-axis direction.
7. The semiconductor device of claim 1 , wherein the two first lower electrodes are each exposed by two lower supporter holes among the lower supporter holes.
8. The semiconductor device of claim 1 , wherein the first direction and the second direction are different from the minor-axis direction and the major-axis direction, respectively.
9. The semiconductor device of claim 8 , wherein the major axis is inclined 30° in a counterclockwise direction from an axis of the first direction.
10. The semiconductor device of claim 8 , wherein the major axis is inclined 30° in a clockwise direction from an axis of the first direction.
11. The semiconductor device of claim 1 , wherein the plurality of lower supporter holes include a first lower supporter hole including a first major axis and a second lower supporter hold including a second major axis, and
the first major axis is different from the second major axis, the first direction and the second direction.
12. The semiconductor device of claim 11 , wherein the plurality of lower supporter holes further include a third lower supporter hole including a third major axis, and
the third major axis is parallel to the second direction.
13. The semiconductor device of claim 1 , wherein, in a plan view, the upper supporter pattern has the same shape as the lower supporter pattern.
14. The semiconductor device of claim 1 , wherein the upper supporter pattern includes an upper supporter hole, and
at least one of the plurality of lower supporter holes is smaller than the upper supporter hole.
15. The semiconductor device of claim 14 , wherein the upper supporter hole overlaps the at least one of the plurality of lower supporter holes in a direction that is perpendicular to the main surface of the substrate.
16. A semiconductor device comprising:
a substrate;
a plurality of lower electrodes on the substrate, the plurality of lower electrodes arranged in a honeycomb structure in which the plurality of lower electrodes are at corners and vertices of hexagons;
a lower supporter pattern between the plurality of lower electrodes and including a plurality of lower supporter holes, each of the plurality of lower supporter holes has an oval shape including a major axis and a minor axis intersecting the major axis;
an upper supporter pattern between the plurality of lower electrodes and on the lower supporter pattern;
a dielectric layer on the plurality of lower electrodes, the lower supporter pattern and the upper supporter pattern; and
an upper electrode on the dielectric layer,
wherein each of the plurality of lower electrodes is pillar-shaped,
at least one of the plurality of lower supporter holes exposes two first lower electrodes arranged in a minor-axis direction among the plurality of lower electrodes, and exposes two second lower electrodes arranged in a major-axis direction among the plurality of lower electrodes, and
each of cross-sectional areas of upper surfaces of the first lower electrodes is different from cross-sectional areas of upper surfaces of the second lower electrodes.
17. The semiconductor device of claim 16 , wherein each of the cross-sectional areas of the upper surfaces of the first lower electrodes is smaller than the cross-sectional areas of the upper surfaces of the second lower electrodes.
18. The semiconductor device of claim 16 , wherein a distance between the first lower electrodes is smaller than a distance between the second lower electrodes.
19. The semiconductor device of claim 16 , wherein each of horizontal widths of upper portions of the first lower electrodes decreases upward.
20. The semiconductor device of claim 19 , wherein each of the upper portions of the first lower electrodes includes an inclined side surface.