Semiconductor storage device with improved cutoff characteristics
A semiconductor storage device includes a first stacked body including first insulating films and first conductive films that are alternately stacked in a first direction. A first columnar body and a second columnar body extend within the first stacked body in the first direction. A second conductive film is provided above the first stacked body, and extends in a third direction intersecting the first direction and the second direction. A third insulator is adjacent to the second conductive film and extends in the third direction. A third conductive film is adjacent to the third insulator and extends in the third direction. A third columnar body is provided on the first columnar body. A fourth columnar body is provided on the second columnar body. A thickness of a third semiconductor portion in the first direction is greater than a thickness of the second conductive film in the first direction.
1. A semiconductor storage device, comprising:
a plurality of word lines spaced from each other in a thickness direction;
a first memory string including a plurality of first memory transistors connected in series, gates of the first memory transistors being connected to the word lines, respectively;
a second memory string including a plurality of second memory transistors connected in series, gates of the second memory transistors being connected to the word lines, respectively;
a first select gate line above the plurality of word lines in the thickness direction;
a first select gate transistor connected in series to the first memory string, a gate of the first select gate transistor being connected to the first select gate line;
a second select gate line above the plurality of word lines in the thickness direction; and
a second select gate transistor connected in series to the second memory string, a gate of the second select gate transistor being connected to the second select gate line, wherein
a channel length of the first select gate transistor is greater than a thickness of the first select gate line in the thickness direction.
2. The semiconductor storage device according to claim 1 , wherein a channel length of the second select gate transistor is greater than a thickness of the second select gate line in the thickness direction.
3. The semiconductor storage device according to claim 1 , further comprising:
a bit line electrically connected to the first select gate transistor and the second select gate transistor.
4. The semiconductor storage device according to claim 1 , wherein
a length of the gate of the first select gate transistor in the first direction is greater than the thickness of the first select gate line in the thickness direction, and
a length of the gate of the second select gate transistor in the first direction is greater than the thickness of the second select gate line in the thickness direction.
5. The semiconductor storage device according to claim 1 , wherein the channel length of the first select gate transistor is equal to the channel length of the second select gate transistor.
6. The semiconductor storage device according to claim 1 , wherein the channel length of the first select gate transistor is greater than twice the thickness of the first select gate line in the thickness direction.