Semiconductor detector
A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.
1. A device comprising:
an active region;
an isolation structure laterally surrounding the active region;
a gate structure across the active region;
an interlayer dielectric (ILD) layer laterally surrounding the gate structure;
a reading contact in contact with the isolation structure and separated from the gate structure by a first portion of the ILD layer;
a sensing contact in contact with the isolation structure and separated from the gate structure by a second portion of the ILD layer;
a source/drain epitaxial structure over the active region; and
a source/drain contact over the source/drain epitaxial structure, wherein the source/drain contact has a top surface substantially coplanar with a top surface of the sensing contact.
2. The device of claim 1 , wherein the reading contact and the sensing contact are on opposite sides of the active region.
3. The device of claim 1 , wherein the reading contact is spaced apart from the active region.
4. The device of claim 1 , wherein the sensing contact is spaced apart from the active region.
5. The device of claim 1 , further comprising a sensing pad structure connected to the sensing contact.
6. The device of claim 5 , wherein the sensing pad structure covers the gate structure.
7. The device of claim 5 , wherein the sensing pad structure does not cover the reading contact.
8. The device of claim 1 , wherein the sensing contact is thicker than the source/drain epitaxial structure.
9. The device of claim 1 , wherein the source/drain contact is thinner than the sensing contact.
10. A device comprising:
an active region extending in a first direction in a top view;
a gate structure across the active region and extending in a second direction different from the first direction in the top view;
an interlayer dielectric (ILD) layer laterally surrounding the gate structure;
a reading contact and a sensing contact embedded in the ILD layer, wherein the reading contact and the sensing contact are arranged in the second direction in the top view; and
a word line connected to the reading contact.
11. The device of claim 10 , wherein the active region is between the reading contact and the sensing contact in the top view.
12. The device of claim 10 , further comprising a source/drain epitaxial structure over the active region, and a bottom surface of the reading contact is lower than a top surface of the source/drain epitaxial structure.
13. The device of claim 10 , further comprising a source/drain epitaxial structure over the active region, and a bottom surface of the sensing contact is lower than a top surface of the source/drain epitaxial structure.
14. The device of claim 10 , wherein the word line is across the gate structure and extends in the first direction in the top view.
15. The device of claim 10 , further comprising a sensing pad structure over the gate structure and connected to the sensing contact.
16. A device comprising:
an active region;
a gate structure over the active region;
a pair of reading contacts on opposite sides of the gate structure and spaced apart from the active region, wherein bottom surfaces of the reading contacts are lower than a top surface of the gate structure; and
a sensing contact adjacent to the gate structure and spaced apart from the active region, wherein a bottom surface of the sensing contact is lower than the top surface of the gate structure.
17. The device of claim 16 , wherein the reading contacts are spaced apart from the gate structure.
18. The device of claim 16 , wherein the sensing contact is spaced apart from the gate structure.
19. The device of claim 16 , further comprising a source/drain epitaxial structure over the active region, wherein a distance between the gate structure and one of the reading contacts is less than a width of the source/drain epitaxial structure.
20. The device of claim 16 , further comprising a source/drain epitaxial structure over the active region, wherein a distance between the sensing contact and the gate structure is less than a width of the source/drain epitaxial structure.