Process kits and related methods for processing chambers to facilitate deposition process adjustability
The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.
1. A process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing, the process kit comprising:
a plate having a first face and a second face opposing the first face;
an upper liner comprising:
an annular section,
one or more ledges extending inwardly relative to the annular section, the one or more ledges configured to support one or more outer regions of the second face of the plate,
one or more inlet openings extending to an inner surface of the annular section on a first side of the upper liner, and
one or more outlet openings extending to the inner surface of the annular section on a second side of the upper liner,
the second face of the plate is positionable to face a substrate support, and the plate is sized to span a gap extending inwardly of the one or more ledges to divide an internal volume into an upper portion and a lower portion; and
a lower liner configured for positioning below the upper liner.
2. The process kit of claim 1 , wherein the one or more inlet openings extend from an outer surface of the annular section of the upper liner to the inner surface at a first location above the one or more ledges, and the one or more outlet openings extend from a lower surface of the upper liner to the inner surface at a second location above the one or more ledges.
3. The process kit of claim 2 , wherein the upper liner further comprises a first extension and a second extension disposed outwardly of the lower surface of the upper liner.
4. The process kit of claim 3 , wherein at least part of the annular section of the upper liner is aligned with the first extension and the second extension.
5. The process kit of claim 1 , wherein a lowermost end of the plate is aligned above a lowermost end of the upper liner.
6. A processing chamber applicable for use in semiconductor manufacturing, comprising:
an internal volume;
a substrate support disposed in the internal volume, the substrate support comprising a support face;
a window at least partially defining the internal volume, the window comprising:
a first face that is concave or flat, and
a second face that is convex, the second face facing the substrate support;
a plate disposed in the internal volume, the plate in the shape of a disc or a rectangle, the plate having a first face and a second face opposing the first face, and the first face of the plate facing the second face of the window; and
an upper liner disposed in the internal volume, the upper liner comprising:
an annular section, and
one or more ledges extending inwardly relative to the annular section, the one or more ledges supporting one or more outer regions of the second face of the plate,
the second face of the plate facing the substrate support, and the plate spanning a gap extending inwardly of the one or more ledges to divide the internal volume into an upper portion and a lower portion.
7. The processing chamber of claim 6 , wherein the window comprises an inner section and an outer section, the first face and the second face being at least part of the inner section.
8. The processing chamber of claim 7 , wherein the inner section is transparent and the outer section is opaque.
9. The processing chamber of claim 7 , wherein the second face comprises one or more portions, each of the one or more portions having a radius of curvature that is larger than a width of the inner section by at least a factor of 1.5.
10. The processing chamber of claim 9 , wherein the radius of curvature is larger than the width by at least a factor of 2.0.
11. The processing chamber of claim 7 , wherein the second face has an arc angle that is less than 40 degrees.
12. The processing chamber of claim 6 , wherein the upper liner further comprises:
one or more inlet openings extending to an inner surface of the annular section on a first side of the upper liner, and
one or more outlet openings extending to the inner surface of the annular section on a second side of the upper liner.
13. The processing chamber of claim 12 , wherein the one or more inlet openings extend from an outer surface of the annular section of the upper liner to the inner surface, and the one or more outlet openings extend from a lower surface of the upper liner to the inner surface.
14. The processing chamber of claim 13 , wherein the one or more inlet openings extend to the inner surface at a location above the one or more ledges to fluidly communicate with the upper portion of the internal volume.
15. The processing chamber of claim 14 , wherein the upper liner further comprises one or more second inlet openings in fluid communication with the lower portion of the internal volume.
16. The processing chamber of claim 15 , wherein the one or more second inlet openings are angularly offset from the one or more inlet openings along a circumference of the processing chamber.
17. The processing chamber of claim 6 , further comprising a lower liner disposed below the upper liner.
18. A method of processing substrates, comprising:
heating a substrate positioned on a substrate support in a processing volume of a chamber;
flowing one or more process gases over the substrate to form one or more layers on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through a lower portion of the processing volume, the lower portion between a plate and the substrate, and the plate supported on an upper liner to divide the processing volume into the lower portion and an upper portion;
exhausting the one or more process gases;
flowing one or more cleaning gases through the upper portion while the plate is supported on the upper liner, the upper portion being between the plate and a window; and
exhausting the one or more cleaning gases.
19. The method of claim 18 , further comprising flowing one or more purge gases through the upper portion simultaneously with the flowing of the one or more process gases over the substrate.
20. The method of claim 19 , further comprising flowing one or more cleaning gases through the lower portion of the processing volume.
21. A process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing, the process kit comprising:
a plate having a first face and a second face opposing the first face;
an upper liner comprising:
an annular section,
one or more ledges extending inwardly relative to the annular section, the one or more ledges configured to support one or more outer regions of the second face of the plate,
one or more inlet openings extending to an inner surface of the annular section on a first side of the upper liner, and
one or more outlet openings extending to the inner surface of the annular section on a second side of the upper liner,
the one or more inlet openings extending from an outer surface of the annular section of the upper liner to the inner surface at a first location above the one or more ledges, and the one or more outlet openings extending from a lower surface of the upper liner to the inner surface at a second location above the one or more ledges; and
a lower liner configured for positioning below the upper liner.
22. A processing chamber applicable for use in semiconductor manufacturing, comprising:
an internal volume;
a substrate support disposed in the internal volume, the substrate support comprising a support face;
a window at least partially defining the internal volume, the window comprising:
a first face that is concave or flat, and
a second face that is convex, the second face facing the substrate support;
a plate disposed in the internal volume, the plate in the shape of a disc or a rectangle, the plate having a first face and a second face opposing the first face, and the first face of the plate facing the second face of the window; and
an upper liner disposed in the internal volume, the upper liner comprising:
an annular section, and
one or more ledges extending inwardly relative to the annular section, the one or more ledges supporting one or more outer regions of the second face of the plate,
the one or more inlet openings extending from an outer surface of the annular section of the upper liner to the inner surface at a first location above the one or more ledges, and the one or more outlet openings extending from a lower surface of the upper liner to the inner surface at a second location above the one or more ledges.