Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process
A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.
1. An ingot pulling apparatus for growing a doped single crystal silicon ingot, the apparatus comprising:
an outer housing defining an inner chamber;
a crucible disposed within the inner chamber for holding a silicon melt; and
a gas doping system for introducing dopant species into the melt, the gas doping system comprising:
a feed tube extending between a first end and a second end, the second end located in the inner chamber, the feed tube including a capsule disposed proximate the second end;
a dopant feed source coupled in flow communication with the first end of the feed tube, the dopant feed source being configured to add volatile dopant to the feed tube;
a positioning system configured to adjust the position of the feed tube between a first position, in which the second end of the feed tube is at a first height above a surface of the melt, and a second position, in which the second end of the feed tube is at a second height above the surface of the melt that is smaller than the first height; and
a controller communicatively coupled to the dopant feed source and the positioning system, the controller being configured to cause the dopant feed source to add a targeted amount of volatile dopant to the feed tube and to cause the positioning system to move the feed tube to the second position at a speed rate, each of the second height and the speed rate being selected to control a vaporization rate of the volatile dopant in the feed tube during an ingot pulling process.
2. The apparatus of claim 1 , further comprising a second gas doping system for introducing dopant species into the melt, the second gas doping system comprising:
a second feed tube extending between a first end and a second end, the second end of the second feed tube located in the inner chamber, the second feed tube including a second capsule disposed proximate the second end;
a second dopant feed source coupled in flow communication with the first end of the second feed tube, the dopant feed source being configured to add a volatile dopant to the second feed tube; and
a second positioning system configured to adjust the position of the second feed tube between a first position, in which the second end of the second feed tube is at a first height above a surface of the melt, and a second position, in which the second end of the second feed tube is at a second height above the surface of the melt that is smaller than the first height;
wherein the controller is communicatively coupled to the second dopant feed source and the second positioning system and configured to cause the second dopant feed source to add a targeted amount of the volatile dopant to the second feed tube and to cause the second positioning system to move the second feed tube to the second position at a speed rate, each of the second height and the speed rate of the second feed tube being selected to control a vaporization rate of the volatile dopant in the second feed tube during the ingot pulling process.
3. The apparatus of claim 2 , wherein the second height of the second feed tube is different from the second height of the feed tube.
4. The apparatus of claim 2 , wherein the speed rate of the second feed tube is different from the speed rate of the feed tube.
5. The apparatus of claim 1 , further comprising a heat shield surrounding a growth chamber within the inner chamber through which a single crystal silicon ingot is grown, wherein the second end of the feed tube in the second position is located in a channel within the growth chamber defined by the heat shield.
6. The apparatus of claim 1 , further comprising a heat shield surrounding a growth chamber within the inner chamber through which a single crystal silicon ingot is grown, the heat shield defining a gap above the surface of the melt, wherein the second end of the feed tube in the second position is located in the gap.
7. The apparatus of claim 1 , wherein the controller is configured to determine the second height and the speed rate based on a simulated temperature profile of the second end of the feed tube as a function of a height of the second end relative to the surface of the melt.
8. The apparatus of claim 1 , wherein the controller is configured to determine the second height and the speed rate based on a doping efficiency profile of the volatile dopant as a function of a height of the second end relative to the surface of the melt.
9. The apparatus of claim 1 , wherein the dopant feed source is configured to add a charge of a solid dopant into the feed tube.
10. The apparatus of claim 9 , wherein the solid dopant is a solid n-type dopant.
11. The apparatus of claim 9 , wherein the solid dopant is a solid p-type dopant.
12. The apparatus of claim 11 , wherein the solid dopant is boric acid.
13. An ingot pulling apparatus for growing a doped single crystal silicon ingot, the apparatus comprising:
an outer housing defining an inner chamber;
a crucible disposed within the inner chamber for holding a silicon melt; and
a first gas doping system and a second gas doping system for introducing dopant species into the melt, the first and second gas doping systems each comprising:
a feed tube extending between a first end and a second end, the second end located in the inner chamber, the feed tube including a capsule disposed proximate the second end;
a dopant feed source coupled in flow communication with the first end of the feed tube, the dopant feed source being configured to add a volatile dopant to the feed tube;
a positioning system configured to adjust the position of the feed tube between a first position, in which the second end of the feed tube is at a first height above a surface of the melt, and a second position, in which the second end of the feed tube is at a second height above the surface of the melt that is smaller than the first height; and
a controller communicatively coupled to the dopant feed source and the positioning system, the controller being configured to cause the dopant feed source to add a targeted amount of the volatile dopant to the feed tube and to cause the positioning system to move the feed tube to the second position, the second height being selected to control a vaporization rate of the volatile dopant in the feed tube during an ingot pulling process.
14. The apparatus of claim 13 , wherein the second height of the feed tube of the second gas doping system is different from the second height of the feed tube of the first gas doping system.
15. The apparatus of claim 13 , wherein the controller of each of the first and second gas doping systems is configured to cause the respective positioning system to move the respective feed tube at a speed rate that is selected to control a vaporization rate of the volatile dopant in the respective feed tube.
16. The apparatus of claim 15 , wherein the speed rate of the feed tube of the second gas doping system is different from the speed rate of the feed tube of the first gas doping system.
17. The apparatus of claim 13 , further comprising a heat shield surrounding a growth chamber within the inner chamber through which a single crystal silicon ingot is grown, wherein the second end of each feed tube in the second position is located in a channel within the growth chamber defined by the heat shield.
18. The apparatus of claim 13 , further comprising a heat shield surrounding a growth chamber within the inner chamber through which a single crystal silicon ingot is grown, the heat shield defining a gap above the surface of the melt, wherein the second end of each feed tube in the second position is located in the gap.
19. The apparatus of claim 13 , wherein the controller of each of the first and second gas doping systems is configured to determine the second height of the second end of the respective feed tube based on at least one of i) a simulated temperature profile of the second end of the respective feed tube as a function of a height of the second end relative to the surface of the melt and ii) a doping efficiency profile of the volatile dopant as a function of a height of the second end relative to the surface of the melt.
20. The apparatus of any of claim 13 , wherein the dopant feed source of each of the first and second gas doping systems is configured to add a charge of a solid boric acid dopant into the feed tube.