Lithium niobate waveguide having weak phase drift
A lithium niobate waveguide having weak phase drift includes a lithium niobate layer, a metal electrode, and a substrate layer. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is arranged on the upper surface of the lithium niobate central ridge. The substrate layer is located on the lower surface of the lithium niobate layer and is made of silicon, silicon dioxide, a multilayer material made of silicon and silicon dioxide or a multilayer material made of silicon dioxide, metal, and silicon, so as to further realize the purpose of inhibiting phase drift. Compared with other doped structures or other structures, the structure is simple in manufacturing method, and moreover, a very good phase drift suppression effect is achieved.
1. A lithium niobate waveguide having weak phase drift, comprising:
a lithium niobate layer,
a metal electrode, and
a substrate layer,
wherein the lithium niobate layer comprises a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge,
wherein a metal oxide layer is disposed on an upper surface of the lithium niobate central ridge, and
wherein the substrate layer is located on a lower surface of the lithium niobate layer,
wherein a thickness of the lithium niobate central ridge ranges from 0.2 to 3 μm, a thickness of each lithium niobate extension surface ranges from 0.1 to 1 μm, and a width of the lithium niobate central ridge ranges from 0.3 to 3 μm,
wherein the metal oxide layer is disposed on upper surfaces of the lithium niobate extension surfaces and a side surface of the central ridge,
wherein the metal electrode passes through partial or all of the metal oxide layers, and/or partial or all of the lithium niobate extension surfaces, and/or partial or all of the lower substrate layer to be connected to a surface of a lowermost layer that is passed through.
2. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the substrate layer is comprised of silicon, silicon dioxide, a multilayer material made of silicon and silicon dioxide or a multilayer material made of silicon dioxide, metal, and silicon.
3. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the metal electrode is connected to the upper surfaces of the metal oxide layers.
4. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the metal electrode is connected to the upper surfaces of the lithium niobate extension surfaces.
5. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the metal electrode passes through partial or all of the lithium niobate extension surfaces, and/or partial or all of the lower substrate layer to be connected to a surface of a lowermost layer that is passed through.
6. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the maximum thickness of the metal oxide layers is less than 2 μm.
7. The lithium niobate waveguide having weak phase drift as claimed in claim 1 , wherein the metal oxide layers is comprised of aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide or titanium dioxide.